MY8600583A - Semiconductor integrated circuit devices and a process for producing the same - Google Patents

Semiconductor integrated circuit devices and a process for producing the same

Info

Publication number
MY8600583A
MY8600583A MY583/86A MY8600583A MY8600583A MY 8600583 A MY8600583 A MY 8600583A MY 583/86 A MY583/86 A MY 583/86A MY 8600583 A MY8600583 A MY 8600583A MY 8600583 A MY8600583 A MY 8600583A
Authority
MY
Malaysia
Prior art keywords
producing
same
integrated circuit
semiconductor integrated
circuit devices
Prior art date
Application number
MY583/86A
Other languages
English (en)
Inventor
Semiconductor Integrat Devices
A Pro
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of MY8600583A publication Critical patent/MY8600583A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
MY583/86A 1980-11-07 1986-12-30 Semiconductor integrated circuit devices and a process for producing the same MY8600583A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155945A JPS5780739A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device and manufacture thereof

Publications (1)

Publication Number Publication Date
MY8600583A true MY8600583A (en) 1986-12-31

Family

ID=15616950

Family Applications (1)

Application Number Title Priority Date Filing Date
MY583/86A MY8600583A (en) 1980-11-07 1986-12-30 Semiconductor integrated circuit devices and a process for producing the same

Country Status (7)

Country Link
JP (1) JPS5780739A (xx)
DE (1) DE3141195A1 (xx)
FR (1) FR2494042B1 (xx)
GB (2) GB2087148B (xx)
HK (2) HK44686A (xx)
IT (1) IT1140271B (xx)
MY (1) MY8600583A (xx)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
FR2519461A1 (fr) * 1982-01-06 1983-07-08 Hitachi Ltd Dispositif de memoire a semi-conducteurs et procede de fabrication d'un tel dispositif
DE3218309A1 (de) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München Verfahren zum herstellen von integrierten mos-feldeffekttransistoren mit einer aus metallsiliziden bestehenden zusaetzlichen leiterbahnebene
JPS593968A (ja) * 1982-06-29 1984-01-10 Mitsubishi Electric Corp 半導体集積回路装置
DE3382482D1 (de) * 1982-09-30 1992-01-30 Advanced Micro Devices Inc Aluminium-metall-silicid-verbindungsstruktur fuer integrierte schaltungen und deren herstellungsverfahren.
US5136361A (en) * 1982-09-30 1992-08-04 Advanced Micro Devices, Inc. Stratified interconnect structure for integrated circuits
DE3304651A1 (de) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München Dynamische halbleiterspeicherzelle mit wahlfreiem zugriff (dram) und verfahren zu ihrer herstellung
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
FR2555364B1 (fr) * 1983-11-18 1990-02-02 Hitachi Ltd Procede de fabrication de connexions d'un dispositif a circuits integres a semi-conducteurs comportant en particulier un mitset
JPS60134466A (ja) * 1983-12-23 1985-07-17 Hitachi Ltd 半導体装置およびその製造方法
JPH067584B2 (ja) * 1984-04-05 1994-01-26 日本電気株式会社 半導体メモリ
US5227316A (en) * 1985-01-22 1993-07-13 National Semiconductor Corporation Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size
US5061986A (en) * 1985-01-22 1991-10-29 National Semiconductor Corporation Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics
EP0490877A3 (en) 1985-01-22 1992-08-26 Fairchild Semiconductor Corporation Interconnection for an integrated circuit
US5045916A (en) * 1985-01-22 1991-09-03 Fairchild Semiconductor Corporation Extended silicide and external contact technology
US5072275A (en) * 1986-02-28 1991-12-10 Fairchild Semiconductor Corporation Small contactless RAM cell
US5100824A (en) * 1985-04-01 1992-03-31 National Semiconductor Corporation Method of making small contactless RAM cell
US5340762A (en) * 1985-04-01 1994-08-23 Fairchild Semiconductor Corporation Method of making small contactless RAM cell
JPS61248447A (ja) * 1985-04-25 1986-11-05 Fujitsu Ltd 配線層の形成方法
JPS61248446A (ja) * 1985-04-25 1986-11-05 Fujitsu Ltd 半導体装置
CA1235824A (en) * 1985-06-28 1988-04-26 Vu Q. Ho Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
SE8603963L (sv) * 1985-09-27 1987-03-28 Rca Corp Kontakt med lag resistans for ett halvledarorgan samt sett att framstella densamma
US4638400A (en) * 1985-10-24 1987-01-20 General Electric Company Refractory metal capacitor structures, particularly for analog integrated circuit devices
US4774207A (en) * 1987-04-20 1988-09-27 General Electric Company Method for producing high yield electrical contacts to N+ amorphous silicon
US4990995A (en) * 1987-09-08 1991-02-05 General Electric Company Low reflectance conductor in an integrated circuit
DE19836736C1 (de) * 1998-08-13 1999-12-30 Siemens Ag Kombinierte Vorlade- und Homogenisierschaltung
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813583B1 (xx) * 1969-04-15 1973-04-27
JPS5295886A (en) * 1976-02-07 1977-08-11 Zaisui Ri Automatic treating movable scraps presser
JPS5380986A (en) * 1976-12-25 1978-07-17 Toshiba Corp Manufacture of semiconductor device
JPS583380B2 (ja) * 1977-03-04 1983-01-21 株式会社日立製作所 半導体装置とその製造方法
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
JPS6032976B2 (ja) * 1977-11-02 1985-07-31 日本電気株式会社 集積回路の製造方法
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
JPS5488783A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
IT1110843B (it) * 1978-02-27 1986-01-06 Rca Corp Contatto affondato per dispositivi mos di tipo complementare
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
IT1111823B (it) * 1978-03-17 1986-01-13 Rca Corp Dispositivo mosfet a bassa resistenza superficiale e metodo di fabbricazione dello stesso
DE2815605C3 (de) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Halbleiterspeicher mit Ansteuerleitungen hoher Leitfähigkeit
DE2823855A1 (de) * 1978-05-31 1979-12-06 Fujitsu Ltd Verfahren zum herstellen einer halbleitervorrichtung
GB2061615A (en) * 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS5698873A (en) * 1980-01-07 1981-08-08 Nec Corp Integrated circuit

Also Published As

Publication number Publication date
FR2494042B1 (fr) 1986-12-26
DE3141195A1 (de) 1982-06-24
FR2494042A1 (fr) 1982-05-14
HK44686A (en) 1986-06-27
IT1140271B (it) 1986-09-24
JPS5780739A (en) 1982-05-20
GB2087148A (en) 1982-05-19
HK70586A (en) 1986-09-26
DE3141195C2 (xx) 1993-04-22
GB8331916D0 (en) 1984-01-04
GB2134706B (en) 1985-04-17
IT8124891A0 (it) 1981-11-05
GB2087148B (en) 1985-04-11
GB2134706A (en) 1984-08-15

Similar Documents

Publication Publication Date Title
HK44686A (en) Semiconductor integrated circuit devices and a process for producing the same
DE3379621D1 (en) Semiconductor integrated circuit device and a method for manufacturing the same
GB2115607B (en) Semiconductor device and a method of producing the same
DE3175352D1 (en) Semiconductor device and process for producing same
GB2082387B (en) A semiconductor device and a process for producing the same
MY8700804A (en) A semiconductor integrated circuit device and method of manufacturing the same
GB2075752B (en) Semiconductor integrated circuits
GB2163901B (en) A semiconductor integrated circuit device and a process for manufacturing such a device
HK84188A (en) Process of fabricating a semiconductor integrated circuit device
HK22289A (en) A semiconductor integrated circuit device
MY8600545A (en) A semiconductor device and a process for producing such a device
GB2079048B (en) A semiconductor device and a process for the production thereof
HK40490A (en) A semiconductor integrated circuit device
DE3467472D1 (en) Method for making a high performance transistor integrated circuit and the resulting integrated circuit
DE3063191D1 (en) Method for manufacturing a semiconductor integrated circuit
GB2074788B (en) Semiconductor integrated circuit
DE3377438D1 (en) Resin-molded semiconductor devices and a process for manufacturing the same
DE3175780D1 (en) Semiconductor integrated circuit devices
DE3165345D1 (en) Method for manufacturing a semiconductor integrated circuit device
HK73586A (en) A semiconductor integrated circuit device and a method of making the same
HK30789A (en) Process for manufacturing a semiconductor integrated circuit device
GB2084397B (en) Semiconductor integrated circuit
GB8408434D0 (en) Producing integrated circuit devices
DE3174824D1 (en) Semiconductor integrated circuit
DE2965080D1 (en) Integrated semiconductor circuit structure and method for realizing the same