GB2134706B - Composite conductor structure for semiconductor devices - Google Patents

Composite conductor structure for semiconductor devices

Info

Publication number
GB2134706B
GB2134706B GB08331916A GB8331916A GB2134706B GB 2134706 B GB2134706 B GB 2134706B GB 08331916 A GB08331916 A GB 08331916A GB 8331916 A GB8331916 A GB 8331916A GB 2134706 B GB2134706 B GB 2134706B
Authority
GB
United Kingdom
Prior art keywords
semiconductor devices
conductor structure
composite conductor
composite
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08331916A
Other versions
GB8331916D0 (en
GB2134706A (en
Inventor
Osamu Kasahara
Shinji Shimizu
Hiroyuki Miyazawa
Kensuke Nakata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Publication of GB8331916D0 publication Critical patent/GB8331916D0/en
Publication of GB2134706A publication Critical patent/GB2134706A/en
Application granted granted Critical
Publication of GB2134706B publication Critical patent/GB2134706B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
    • H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB08331916A 1980-11-07 1983-11-30 Composite conductor structure for semiconductor devices Expired GB2134706B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55155945A JPS5780739A (en) 1980-11-07 1980-11-07 Semiconductor integrated circuit device and manufacture thereof

Publications (3)

Publication Number Publication Date
GB8331916D0 GB8331916D0 (en) 1984-01-04
GB2134706A GB2134706A (en) 1984-08-15
GB2134706B true GB2134706B (en) 1985-04-17

Family

ID=15616950

Family Applications (2)

Application Number Title Priority Date Filing Date
GB8133069A Expired GB2087148B (en) 1980-11-07 1981-11-03 Composite conductor structure for semiconductor devices
GB08331916A Expired GB2134706B (en) 1980-11-07 1983-11-30 Composite conductor structure for semiconductor devices

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB8133069A Expired GB2087148B (en) 1980-11-07 1981-11-03 Composite conductor structure for semiconductor devices

Country Status (7)

Country Link
JP (1) JPS5780739A (en)
DE (1) DE3141195A1 (en)
FR (1) FR2494042B1 (en)
GB (2) GB2087148B (en)
HK (2) HK44686A (en)
IT (1) IT1140271B (en)
MY (1) MY8600583A (en)

Families Citing this family (29)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57194567A (en) * 1981-05-27 1982-11-30 Hitachi Ltd Semiconductor memory device
FR2519461A1 (en) * 1982-01-06 1983-07-08 Hitachi Ltd SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SUCH A DEVICE
DE3218309A1 (en) * 1982-05-14 1983-11-17 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS WITH AN ADDITIONAL CIRCUIT LEVEL, MADE OF METAL SILICIDES
JPS593968A (en) * 1982-06-29 1984-01-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
JPS59501845A (en) * 1982-09-30 1984-11-01 アドバンスト・マイクロ・ディバイシズ・インコ−ポレ−テッド Aluminum-metal silicide interconnect structure for integrated circuits and method of manufacturing the same
US5136361A (en) * 1982-09-30 1992-08-04 Advanced Micro Devices, Inc. Stratified interconnect structure for integrated circuits
DE3304651A1 (en) * 1983-02-10 1984-08-16 Siemens AG, 1000 Berlin und 8000 München DYNAMIC SEMICONDUCTOR MEMORY CELL WITH OPTIONAL ACCESS (DRAM) AND METHOD FOR THEIR PRODUCTION
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
GB2139419A (en) * 1983-05-05 1984-11-07 Standard Telephones Cables Ltd Semiconductor devices
FR2555364B1 (en) * 1983-11-18 1990-02-02 Hitachi Ltd METHOD FOR MANUFACTURING CONNECTIONS OF A DEVICE WITH INTEGRATED SEMICONDUCTOR CIRCUITS INCLUDING IN PARTICULAR A MITSET
JPS60134466A (en) * 1983-12-23 1985-07-17 Hitachi Ltd Semiconductor device and manufacture thereof
JPH067584B2 (en) * 1984-04-05 1994-01-26 日本電気株式会社 Semiconductor memory
US5227316A (en) * 1985-01-22 1993-07-13 National Semiconductor Corporation Method of forming self aligned extended base contact for a bipolar transistor having reduced cell size
DE3686490T2 (en) * 1985-01-22 1993-03-18 Fairchild Semiconductor SEMICONDUCTOR STRUCTURE.
US5045916A (en) * 1985-01-22 1991-09-03 Fairchild Semiconductor Corporation Extended silicide and external contact technology
US5061986A (en) * 1985-01-22 1991-10-29 National Semiconductor Corporation Self-aligned extended base contact for a bipolar transistor having reduced cell size and improved electrical characteristics
US5340762A (en) * 1985-04-01 1994-08-23 Fairchild Semiconductor Corporation Method of making small contactless RAM cell
US5100824A (en) * 1985-04-01 1992-03-31 National Semiconductor Corporation Method of making small contactless RAM cell
US5072275A (en) * 1986-02-28 1991-12-10 Fairchild Semiconductor Corporation Small contactless RAM cell
JPS61248447A (en) * 1985-04-25 1986-11-05 Fujitsu Ltd Formation of wiring layer
JPS61248446A (en) * 1985-04-25 1986-11-05 Fujitsu Ltd Semiconductor device
CA1235824A (en) * 1985-06-28 1988-04-26 Vu Q. Ho Vlsi mosfet circuits using refractory metal and/or refractory metal silicide
SE8603963L (en) * 1985-09-27 1987-03-28 Rca Corp CONTACT WITH LAW RESISTANCE FOR A SEMICONDUCTOR ORGAN AND SETTING TO MAKE IT
US4638400A (en) * 1985-10-24 1987-01-20 General Electric Company Refractory metal capacitor structures, particularly for analog integrated circuit devices
US4774207A (en) * 1987-04-20 1988-09-27 General Electric Company Method for producing high yield electrical contacts to N+ amorphous silicon
US4990995A (en) * 1987-09-08 1991-02-05 General Electric Company Low reflectance conductor in an integrated circuit
DE19836736C1 (en) * 1998-08-13 1999-12-30 Siemens Ag Combination type precharging and equalising-circuit for semiconductor memory device
US6265297B1 (en) 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US6458714B1 (en) 2000-11-22 2002-10-01 Micron Technology, Inc. Method of selective oxidation in semiconductor manufacture

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813583B1 (en) * 1969-04-15 1973-04-27
JPS5295886A (en) * 1976-02-07 1977-08-11 Zaisui Ri Automatic treating movable scraps presser
JPS5380986A (en) * 1976-12-25 1978-07-17 Toshiba Corp Manufacture of semiconductor device
JPS583380B2 (en) * 1977-03-04 1983-01-21 株式会社日立製作所 Semiconductor device and its manufacturing method
US4141022A (en) * 1977-09-12 1979-02-20 Signetics Corporation Refractory metal contacts for IGFETS
JPS6032976B2 (en) * 1977-11-02 1985-07-31 日本電気株式会社 Integrated circuit manufacturing method
US4128670A (en) * 1977-11-11 1978-12-05 International Business Machines Corporation Fabrication method for integrated circuits with polysilicon lines having low sheet resistance
JPS5488783A (en) * 1977-12-26 1979-07-14 Cho Lsi Gijutsu Kenkyu Kumiai Semiconductor
IT1110843B (en) * 1978-02-27 1986-01-06 Rca Corp Sunken contact for complementary type MOS devices
US4218291A (en) * 1978-02-28 1980-08-19 Vlsi Technology Research Association Process for forming metal and metal silicide films
IT1111823B (en) * 1978-03-17 1986-01-13 Rca Corp LOW SURFACE RESISTANCE MOSFET DEVICE AND ITS MANUFACTURING METHOD
DE2815605C3 (en) * 1978-04-11 1981-04-16 Siemens AG, 1000 Berlin und 8000 München Semiconductor memory with control lines of high conductivity
DE2823855A1 (en) * 1978-05-31 1979-12-06 Fujitsu Ltd Contact prodn. in semiconductor device with multiple wiring layers - using reactive metal film in contact hole between two aluminium layers to prevent faults
GB2061615A (en) * 1979-10-25 1981-05-13 Gen Electric Composite conductors for integrated circuits
JPS5698873A (en) * 1980-01-07 1981-08-08 Nec Corp Integrated circuit

Also Published As

Publication number Publication date
HK70586A (en) 1986-09-26
FR2494042B1 (en) 1986-12-26
GB2087148A (en) 1982-05-19
IT1140271B (en) 1986-09-24
DE3141195C2 (en) 1993-04-22
MY8600583A (en) 1986-12-31
GB2087148B (en) 1985-04-11
HK44686A (en) 1986-06-27
GB8331916D0 (en) 1984-01-04
FR2494042A1 (en) 1982-05-14
GB2134706A (en) 1984-08-15
IT8124891A0 (en) 1981-11-05
DE3141195A1 (en) 1982-06-24
JPS5780739A (en) 1982-05-20

Similar Documents

Publication Publication Date Title
GB2134706B (en) Composite conductor structure for semiconductor devices
GB2131603B (en) Semiconductor devices
GB2038552B (en) Composite conductor structure for a semiconductor device
GB8306966D0 (en) Photovoltaic devices
GB8303668D0 (en) Photovoltaic devices
GB8311175D0 (en) Photovoltaic devices
DE3373000D1 (en) Extendible structure
EP0042489A3 (en) Semiconductor devices
GB8326924D0 (en) Insulated conductors
DE3379814D1 (en) Insulating covering
DE3173835D1 (en) Semiconductor devices
GB2078786B (en) Superconductive wires
GB2076430B (en) Superconductor wires
GB8300403D0 (en) Semiconductor arrangement
DE3162762D1 (en) Intermetallic semiconductor devices
GB8333553D0 (en) Structure for etching copper
GB8326677D0 (en) Semiconductor structures
GB2083282B (en) Conductive layers on semiconductor devices
GB8310609D0 (en) Forming semiconductor structure
GB2122997B (en) Imidazoles
GB2068640B (en) Wiring layers for semiconductor devices
GB8326563D0 (en) Semiconductor devices
GB2124427B (en) Insulated gate semiconductor devices
GB2132002B (en) Electrical superconductor
GB2072945B (en) Fabricating semiconductor devices

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19961103