SE8603963L - CONTACT WITH LAW RESISTANCE FOR A SEMICONDUCTOR ORGAN AND SETTING TO MAKE IT - Google Patents

CONTACT WITH LAW RESISTANCE FOR A SEMICONDUCTOR ORGAN AND SETTING TO MAKE IT

Info

Publication number
SE8603963L
SE8603963L SE8603963A SE8603963A SE8603963L SE 8603963 L SE8603963 L SE 8603963L SE 8603963 A SE8603963 A SE 8603963A SE 8603963 A SE8603963 A SE 8603963A SE 8603963 L SE8603963 L SE 8603963L
Authority
SE
Sweden
Prior art keywords
contact
setting
make
semiconductor
organ
Prior art date
Application number
SE8603963A
Other languages
Unknown language ( )
Swedish (sv)
Other versions
SE8603963D0 (en
Inventor
S T Hsu
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Publication of SE8603963D0 publication Critical patent/SE8603963D0/en
Publication of SE8603963L publication Critical patent/SE8603963L/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/45—Ohmic electrodes
    • H01L29/456—Ohmic electrodes on silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System the conductive layers comprising silicides

Abstract

A low-resistance contact on a zone of a semiconductor component which extends into a semiconductor body comprises a first layer of a metal which is difficult to fuse and a second layer composed of metal silicide between the first layer and the zone in contact with the adjacent regions.
SE8603963A 1985-09-27 1986-09-19 CONTACT WITH LAW RESISTANCE FOR A SEMICONDUCTOR ORGAN AND SETTING TO MAKE IT SE8603963L (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US78095685A 1985-09-27 1985-09-27

Publications (2)

Publication Number Publication Date
SE8603963D0 SE8603963D0 (en) 1986-09-19
SE8603963L true SE8603963L (en) 1987-03-28

Family

ID=25121206

Family Applications (1)

Application Number Title Priority Date Filing Date
SE8603963A SE8603963L (en) 1985-09-27 1986-09-19 CONTACT WITH LAW RESISTANCE FOR A SEMICONDUCTOR ORGAN AND SETTING TO MAKE IT

Country Status (4)

Country Link
JP (1) JPS6278817A (en)
KR (1) KR940009584B1 (en)
DE (1) DE3632217A1 (en)
SE (1) SE8603963L (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2624304B1 (en) * 1987-12-04 1990-05-04 Philips Nv METHOD FOR ESTABLISHING AN ELECTRICAL INTERCONNECTION STRUCTURE ON A SILICON SEMICONDUCTOR DEVICE

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5575256A (en) * 1978-12-01 1980-06-06 Nec Corp Semiconductor device
JPS5780739A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS60119750A (en) * 1983-12-02 1985-06-27 Hitachi Ltd Manufacture of semiconductor device

Also Published As

Publication number Publication date
KR870003581A (en) 1987-04-18
DE3632217A1 (en) 1987-04-02
SE8603963D0 (en) 1986-09-19
KR940009584B1 (en) 1994-10-15
JPS6278817A (en) 1987-04-11

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