IT1110843B - Sunken contact for complementary type MOS devices - Google Patents

Sunken contact for complementary type MOS devices

Info

Publication number
IT1110843B
IT1110843B IT19722/79A IT1972279A IT1110843B IT 1110843 B IT1110843 B IT 1110843B IT 19722/79 A IT19722/79 A IT 19722/79A IT 1972279 A IT1972279 A IT 1972279A IT 1110843 B IT1110843 B IT 1110843B
Authority
IT
Italy
Prior art keywords
type mos
mos devices
complementary type
sunken
contact
Prior art date
Application number
IT19722/79A
Other languages
Italian (it)
Other versions
IT7919722A0 (en
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Family has litigation
First worldwide family litigation filed litigation Critical https://patents.darts-ip.com/?family=25378092&utm_source=google_patent&utm_medium=platform_link&utm_campaign=public_patent_search&patent=IT1110843(B) "Global patent litigation dataset” by Darts-ip is licensed under a Creative Commons Attribution 4.0 International License.
Application filed by Rca Corp filed Critical Rca Corp
Publication of IT7919722A0 publication Critical patent/IT7919722A0/en
Application granted granted Critical
Publication of IT1110843B publication Critical patent/IT1110843B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
    • H01L23/53204—Conductive materials
    • H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Thin Film Transistor (AREA)
IT19722/79A 1978-02-27 1979-01-30 Sunken contact for complementary type MOS devices IT1110843B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US88125578A 1978-02-27 1978-02-27

Publications (2)

Publication Number Publication Date
IT7919722A0 IT7919722A0 (en) 1979-01-30
IT1110843B true IT1110843B (en) 1986-01-06

Family

ID=25378092

Family Applications (1)

Application Number Title Priority Date Filing Date
IT19722/79A IT1110843B (en) 1978-02-27 1979-01-30 Sunken contact for complementary type MOS devices

Country Status (4)

Country Link
JP (1) JPS592186B2 (en)
DE (1) DE2906249B2 (en)
IT (1) IT1110843B (en)
SE (1) SE438945B (en)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4285761A (en) * 1980-06-30 1981-08-25 International Business Machines Corporation Process for selectively forming refractory metal silicide layers on semiconductor devices
JPS5846193B2 (en) * 1980-07-15 1983-10-14 株式会社東芝 semiconductor equipment
JPS5780739A (en) * 1980-11-07 1982-05-20 Hitachi Ltd Semiconductor integrated circuit device and manufacture thereof
JPS57117257A (en) * 1981-01-13 1982-07-21 Nec Corp Semiconductor device
JPS57199440A (en) * 1981-06-01 1982-12-07 Mitsubishi Electric Corp Holder for stator coil
JPS582068A (en) * 1981-06-26 1983-01-07 Toshiba Corp Semiconductor device and manufacture thereof
JPS5830147A (en) * 1981-08-18 1983-02-22 Toshiba Corp Semiconductor device
DE3132809A1 (en) * 1981-08-19 1983-03-10 Siemens AG, 1000 Berlin und 8000 München METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS, ESPECIALLY COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS WITH AN ADDITIONAL CIRCUIT LEVEL CONSTRUCTED FROM METAL SILICIDES
JPS6051272B2 (en) * 1982-05-31 1985-11-13 株式会社東芝 Stacked CMOS inverter device
JPS594067A (en) * 1982-06-30 1984-01-10 Fujitsu Ltd Semiconductor device
JPS59125640A (en) * 1982-12-28 1984-07-20 Fujitsu Ltd Manufacture of semiconductor device
GB2140203B (en) * 1983-03-15 1987-01-14 Canon Kk Thin film transistor with wiring layer continuous with the source and drain
JPS61150362A (en) * 1984-12-25 1986-07-09 Toshiba Corp Manufacture of semiconductor device
US4796081A (en) * 1986-05-02 1989-01-03 Advanced Micro Devices, Inc. Low resistance metal contact for silicon devices
DE4121051A1 (en) * 1991-06-26 1993-01-07 Eurosil Electronic Gmbh SEMICONDUCTOR ARRANGEMENT AND PRODUCTION METHOD

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1639051C2 (en) * 1961-12-01 1981-07-02 Western Electric Co., Inc., 10038 New York, N.Y. Method for producing an ohmic contact on a silicon semiconductor body
US3617824A (en) * 1965-07-12 1971-11-02 Nippon Electric Co Mos device with a metal-silicide gate
US3475234A (en) * 1967-03-27 1969-10-28 Bell Telephone Labor Inc Method for making mis structures
NO123436B (en) * 1967-11-14 1971-11-15 Sony Corp
US3634929A (en) * 1968-11-02 1972-01-18 Tokyo Shibaura Electric Co Method of manufacturing semiconductor integrated circuits
US3658586A (en) * 1969-04-11 1972-04-25 Rca Corp Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals
US3753774A (en) * 1971-04-05 1973-08-21 Rca Corp Method for making an intermetallic contact to a semiconductor device
US4041518A (en) * 1973-02-24 1977-08-09 Hitachi, Ltd. MIS semiconductor device and method of manufacturing the same
JPS5847860B2 (en) * 1973-06-30 1983-10-25 株式会社東芝 Hand tie souchi
JPS5534582B2 (en) * 1974-06-24 1980-09-08

Also Published As

Publication number Publication date
IT7919722A0 (en) 1979-01-30
DE2906249A1 (en) 1979-08-30
SE7901551L (en) 1979-08-28
SE438945B (en) 1985-05-13
JPS592186B2 (en) 1984-01-17
DE2906249B2 (en) 1980-11-13
JPS54123883A (en) 1979-09-26

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19980127