SE7901551L - INTEGRATED CIRCUIT - Google Patents
INTEGRATED CIRCUITInfo
- Publication number
- SE7901551L SE7901551L SE7901551A SE7901551A SE7901551L SE 7901551 L SE7901551 L SE 7901551L SE 7901551 A SE7901551 A SE 7901551A SE 7901551 A SE7901551 A SE 7901551A SE 7901551 L SE7901551 L SE 7901551L
- Authority
- SE
- Sweden
- Prior art keywords
- integrated circuit
- integrated
- circuit
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4825—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body for devices consisting of semiconductor layers on insulating or semi-insulating substrates, e.g. silicon on sapphire devices, i.e. SOS
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/525—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body with adaptable interconnections
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Thin Film Transistor (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US88125578A | 1978-02-27 | 1978-02-27 |
Publications (2)
Publication Number | Publication Date |
---|---|
SE7901551L true SE7901551L (en) | 1979-08-28 |
SE438945B SE438945B (en) | 1985-05-13 |
Family
ID=25378092
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SE7901551A SE438945B (en) | 1978-02-27 | 1979-02-21 | INTEGRATED COMPLEMENTS MOS CIRCUIT |
Country Status (4)
Country | Link |
---|---|
JP (1) | JPS592186B2 (en) |
DE (1) | DE2906249B2 (en) |
IT (1) | IT1110843B (en) |
SE (1) | SE438945B (en) |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4285761A (en) * | 1980-06-30 | 1981-08-25 | International Business Machines Corporation | Process for selectively forming refractory metal silicide layers on semiconductor devices |
JPS5846193B2 (en) * | 1980-07-15 | 1983-10-14 | 株式会社東芝 | semiconductor equipment |
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
JPS57117257A (en) * | 1981-01-13 | 1982-07-21 | Nec Corp | Semiconductor device |
JPS57199440A (en) * | 1981-06-01 | 1982-12-07 | Mitsubishi Electric Corp | Holder for stator coil |
JPS582068A (en) * | 1981-06-26 | 1983-01-07 | Toshiba Corp | Semiconductor device and manufacture thereof |
JPS5830147A (en) * | 1981-08-18 | 1983-02-22 | Toshiba Corp | Semiconductor device |
DE3132809A1 (en) * | 1981-08-19 | 1983-03-10 | Siemens AG, 1000 Berlin und 8000 München | METHOD FOR PRODUCING INTEGRATED MOS FIELD EFFECT TRANSISTORS, ESPECIALLY COMPLEMENTARY MOS FIELD EFFECT TRANSISTOR CIRCUITS WITH AN ADDITIONAL CIRCUIT LEVEL CONSTRUCTED FROM METAL SILICIDES |
JPS6051272B2 (en) * | 1982-05-31 | 1985-11-13 | 株式会社東芝 | Stacked CMOS inverter device |
JPS594067A (en) * | 1982-06-30 | 1984-01-10 | Fujitsu Ltd | Semiconductor device |
JPS59125640A (en) * | 1982-12-28 | 1984-07-20 | Fujitsu Ltd | Manufacture of semiconductor device |
GB2140203B (en) * | 1983-03-15 | 1987-01-14 | Canon Kk | Thin film transistor with wiring layer continuous with the source and drain |
JPS61150362A (en) * | 1984-12-25 | 1986-07-09 | Toshiba Corp | Manufacture of semiconductor device |
US4796081A (en) * | 1986-05-02 | 1989-01-03 | Advanced Micro Devices, Inc. | Low resistance metal contact for silicon devices |
DE4121051A1 (en) * | 1991-06-26 | 1993-01-07 | Eurosil Electronic Gmbh | SEMICONDUCTOR ARRANGEMENT AND PRODUCTION METHOD |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1639051C2 (en) * | 1961-12-01 | 1981-07-02 | Western Electric Co., Inc., 10038 New York, N.Y. | Method for producing an ohmic contact on a silicon semiconductor body |
US3617824A (en) * | 1965-07-12 | 1971-11-02 | Nippon Electric Co | Mos device with a metal-silicide gate |
US3475234A (en) * | 1967-03-27 | 1969-10-28 | Bell Telephone Labor Inc | Method for making mis structures |
SE354544B (en) * | 1967-11-14 | 1973-03-12 | Sony Corp | |
US3634929A (en) * | 1968-11-02 | 1972-01-18 | Tokyo Shibaura Electric Co | Method of manufacturing semiconductor integrated circuits |
US3658586A (en) * | 1969-04-11 | 1972-04-25 | Rca Corp | Epitaxial silicon on hydrogen magnesium aluminate spinel single crystals |
US3753774A (en) * | 1971-04-05 | 1973-08-21 | Rca Corp | Method for making an intermetallic contact to a semiconductor device |
US4041518A (en) * | 1973-02-24 | 1977-08-09 | Hitachi, Ltd. | MIS semiconductor device and method of manufacturing the same |
JPS5847860B2 (en) * | 1973-06-30 | 1983-10-25 | 株式会社東芝 | Hand tie souchi |
JPS5534582B2 (en) * | 1974-06-24 | 1980-09-08 |
-
1979
- 1979-01-30 IT IT19722/79A patent/IT1110843B/en active
- 1979-02-19 DE DE2906249A patent/DE2906249B2/en not_active Ceased
- 1979-02-21 SE SE7901551A patent/SE438945B/en not_active IP Right Cessation
- 1979-02-23 JP JP54021291A patent/JPS592186B2/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
IT7919722A0 (en) | 1979-01-30 |
IT1110843B (en) | 1986-01-06 |
DE2906249B2 (en) | 1980-11-13 |
DE2906249A1 (en) | 1979-08-30 |
JPS54123883A (en) | 1979-09-26 |
JPS592186B2 (en) | 1984-01-17 |
SE438945B (en) | 1985-05-13 |
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