JPS5465490A - Integrated circuit and its manufacture - Google Patents
Integrated circuit and its manufactureInfo
- Publication number
- JPS5465490A JPS5465490A JP13234377A JP13234377A JPS5465490A JP S5465490 A JPS5465490 A JP S5465490A JP 13234377 A JP13234377 A JP 13234377A JP 13234377 A JP13234377 A JP 13234377A JP S5465490 A JPS5465490 A JP S5465490A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- poly
- metallic silicide
- oxide film
- conversion
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
PURPOSE: To secure a minute structure for the IC without increasing the wiring resistance by forming the gate electrode wiring or element via the poly-Si metallic silicide conversion layer.
CONSTITUTION: Gate oxide film 4 and field oxide film 3 on p-type Si substrate 1 are covered with poly-Si layer 5. Opening 60 and 70 are drilled selectively to resist film 8, and Pt, Mo and the like are sticked about 1000Å to form layer 61 and 71 through the lift-off. Then a heat treatment is given to have conversion 62 and 72 into the metallic silicide, and layer 5 is removed selectively with use of the etching speed difference. The n-type ion is then injected to form the source and the drain 10 and 11, and then MOSIC is formed through the normal method. In this way, the selective etching property is made use of between the poly-Si and the metallic silicide, thus ensuring formation of an ultra-minute pattern of under 1μm with no trouble of the overtching.
COPYRIGHT: (C)1979,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13234377A JPS6032976B2 (en) | 1977-11-02 | 1977-11-02 | Integrated circuit manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13234377A JPS6032976B2 (en) | 1977-11-02 | 1977-11-02 | Integrated circuit manufacturing method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5465490A true JPS5465490A (en) | 1979-05-26 |
JPS6032976B2 JPS6032976B2 (en) | 1985-07-31 |
Family
ID=15079111
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13234377A Expired JPS6032976B2 (en) | 1977-11-02 | 1977-11-02 | Integrated circuit manufacturing method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6032976B2 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
-
1977
- 1977-11-02 JP JP13234377A patent/JPS6032976B2/en not_active Expired
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5780739A (en) * | 1980-11-07 | 1982-05-20 | Hitachi Ltd | Semiconductor integrated circuit device and manufacture thereof |
Also Published As
Publication number | Publication date |
---|---|
JPS6032976B2 (en) | 1985-07-31 |
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