JPS5760868A - Cmos memory cell - Google Patents
Cmos memory cellInfo
- Publication number
- JPS5760868A JPS5760868A JP55135634A JP13563480A JPS5760868A JP S5760868 A JPS5760868 A JP S5760868A JP 55135634 A JP55135634 A JP 55135634A JP 13563480 A JP13563480 A JP 13563480A JP S5760868 A JPS5760868 A JP S5760868A
- Authority
- JP
- Japan
- Prior art keywords
- drain
- channel
- gate
- oxide film
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
Landscapes
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55135634A JPS5760868A (en) | 1980-09-29 | 1980-09-29 | Cmos memory cell |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP55135634A JPS5760868A (en) | 1980-09-29 | 1980-09-29 | Cmos memory cell |
Related Child Applications (9)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1090314A Division JPH0214564A (ja) | 1989-04-10 | 1989-04-10 | Cmosメモリ・セル |
JP1090315A Division JPH0214565A (ja) | 1989-04-10 | 1989-04-10 | ランダム・アクセス・メモリ |
JP1090316A Division JPH0214566A (ja) | 1989-04-10 | 1989-04-10 | フリップフロップ |
JP1090318A Division JPH0221656A (ja) | 1989-04-10 | 1989-04-10 | ランダム・アクセス・メモリ |
JP1090317A Division JPH0221655A (ja) | 1989-04-10 | 1989-04-10 | フリップフロップ |
JP3008519A Division JP2602125B2 (ja) | 1991-01-28 | 1991-01-28 | 薄膜トランジスタの製造方法 |
JP3008520A Division JP2562383B2 (ja) | 1991-01-28 | 1991-01-28 | 薄膜トランジスタ |
JP3008518A Division JPH04211166A (ja) | 1991-01-28 | 1991-01-28 | 薄膜トランジスタ |
JP3008517A Division JPH04211165A (ja) | 1991-01-28 | 1991-01-28 | ランダム・アクセス・メモリ |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5760868A true JPS5760868A (en) | 1982-04-13 |
JPH0435903B2 JPH0435903B2 (enrdf_load_stackoverflow) | 1992-06-12 |
Family
ID=15156387
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP55135634A Granted JPS5760868A (en) | 1980-09-29 | 1980-09-29 | Cmos memory cell |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5760868A (enrdf_load_stackoverflow) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01102955A (ja) * | 1987-10-15 | 1989-04-20 | Nec Corp | Mos型半導体記憶回路装置 |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503787A (enrdf_load_stackoverflow) * | 1973-05-16 | 1975-01-16 | ||
JPS5036351A (enrdf_load_stackoverflow) * | 1973-08-04 | 1975-04-05 | ||
JPS5562771A (en) * | 1978-11-02 | 1980-05-12 | Toshiba Corp | Integrated circuit device |
JPS5691470A (en) * | 1979-12-25 | 1981-07-24 | Toshiba Corp | Semiconductor |
-
1980
- 1980-09-29 JP JP55135634A patent/JPS5760868A/ja active Granted
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS503787A (enrdf_load_stackoverflow) * | 1973-05-16 | 1975-01-16 | ||
JPS5036351A (enrdf_load_stackoverflow) * | 1973-08-04 | 1975-04-05 | ||
JPS5562771A (en) * | 1978-11-02 | 1980-05-12 | Toshiba Corp | Integrated circuit device |
JPS5691470A (en) * | 1979-12-25 | 1981-07-24 | Toshiba Corp | Semiconductor |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH01102955A (ja) * | 1987-10-15 | 1989-04-20 | Nec Corp | Mos型半導体記憶回路装置 |
Also Published As
Publication number | Publication date |
---|---|
JPH0435903B2 (enrdf_load_stackoverflow) | 1992-06-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO1979000461A1 (fr) | Circuits integres a semi-conducteurs mis complementaires | |
EP0029099A3 (en) | Semiconductor memory device | |
JPS5515229A (en) | Semiconductor photograph device | |
JPS63104469A (ja) | 半導体集積回路装置の製造方法 | |
JPS57112066A (en) | Laminated capacitive element | |
JPS5760868A (en) | Cmos memory cell | |
EP0984494A4 (en) | SOLAR CELL BATTERY | |
US5625200A (en) | Complementary TFT devices with diode-effect elimination means independent of TFT-channel geometry | |
JPS644058A (en) | Semiconductor integrated circuit device | |
ITRM910075A1 (it) | Cella convertitrice tensione-corrente, regolabile, realizzata mediante uno stadio differenziale, a transistori mos. in particolare per formare sinapsi di reti neuroniche e combinazione di tali celle per formare il corredo di sinapsi di un nucleo neur | |
JPS6415965A (en) | Semiconductor memory and manufacture thereof | |
US4409259A (en) | MOS Dynamic RAM cell and method of fabrication | |
JPS5661158A (en) | Cmos random access memory | |
JPS6080251A (ja) | ゲ−トアレイ大規模集積回路装置 | |
JPS6433961A (en) | Mos composite memory device | |
JPS561558A (en) | Dynamic memory cell | |
JPS59150446A (ja) | 半導体集積回路装置 | |
JPS57196556A (en) | Semiconductor integrated circuit device | |
JPS55139692A (en) | Semiconductor nonvolatile memory unit | |
JPS56105663A (en) | Manufacture of ic device by complementary type field effect transistor | |
JPS5630763A (en) | Semiconductor device | |
JPS5649562A (en) | Semiconductor memory unit | |
JPS57113278A (en) | Manufactue of eprom device | |
JPS57143790A (en) | Semiconductor storage device | |
JPS52120688A (en) | Semi-conductor device |