JPS5696850A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPS5696850A JPS5696850A JP17320179A JP17320179A JPS5696850A JP S5696850 A JPS5696850 A JP S5696850A JP 17320179 A JP17320179 A JP 17320179A JP 17320179 A JP17320179 A JP 17320179A JP S5696850 A JPS5696850 A JP S5696850A
- Authority
- JP
- Japan
- Prior art keywords
- film
- layer
- covered
- sio
- layer polycrystalline
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
- G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
- H01L21/2257—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides the applied layer being silicon or silicide or SIPOS, e.g. polysilicon, porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3215—Doping the layers
- H01L21/32155—Doping polycristalline - or amorphous silicon layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53271—Conductive materials containing semiconductor material, e.g. polysilicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/647—Resistive arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0688—Integrated circuits having a three-dimensional layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/15—Static random access memory [SRAM] devices comprising a resistor load element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17320179A JPS5696850A (en) | 1979-12-30 | 1979-12-30 | Semiconductor device and manufacture thereof |
DE8080304587T DE3068271D1 (en) | 1979-12-30 | 1980-12-18 | A semiconductor device and a method of manufacturing a semiconductor device |
EP80304587A EP0032025B1 (en) | 1979-12-30 | 1980-12-18 | A semiconductor device and a method of manufacturing a semiconductor device |
IE2706/80A IE50949B1 (en) | 1979-12-30 | 1980-12-22 | A semiconductor device and a method of manufacturing a semiconductor device |
CA000367608A CA1150416A (en) | 1979-12-30 | 1980-12-29 | Semiconductor device and method for production thereof |
US06/221,371 US4399451A (en) | 1979-12-30 | 1980-12-30 | Semiconductor device and method for production thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP17320179A JPS5696850A (en) | 1979-12-30 | 1979-12-30 | Semiconductor device and manufacture thereof |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS5696850A true JPS5696850A (en) | 1981-08-05 |
JPS6243547B2 JPS6243547B2 (ja) | 1987-09-14 |
Family
ID=15955974
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP17320179A Granted JPS5696850A (en) | 1979-12-30 | 1979-12-30 | Semiconductor device and manufacture thereof |
Country Status (6)
Country | Link |
---|---|
US (1) | US4399451A (ja) |
EP (1) | EP0032025B1 (ja) |
JP (1) | JPS5696850A (ja) |
CA (1) | CA1150416A (ja) |
DE (1) | DE3068271D1 (ja) |
IE (1) | IE50949B1 (ja) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61224437A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS62283643A (ja) * | 1986-05-02 | 1987-12-09 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | シリコンベースの半導体装置のためのコンタクト構造 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3141014A1 (de) * | 1981-10-15 | 1983-04-28 | Siemens AG, 1000 Berlin und 8000 München | Integrierte schaltung |
JPS5893347A (ja) * | 1981-11-30 | 1983-06-03 | Toshiba Corp | Mos型半導体装置及びその製造方法 |
US4554644A (en) * | 1982-06-21 | 1985-11-19 | Fairchild Camera & Instrument Corporation | Static RAM cell |
FR2534415A1 (fr) * | 1982-10-07 | 1984-04-13 | Cii Honeywell Bull | Procede de fabrication de resistances electriques dans un materiau semi-conducteur polycristallin et dispositif a circuits integres resultant |
JPH0695563B2 (ja) * | 1985-02-01 | 1994-11-24 | 株式会社日立製作所 | 半導体装置 |
US5610089A (en) * | 1983-12-26 | 1997-03-11 | Hitachi, Ltd. | Method of fabrication of semiconductor integrated circuit device |
US5276346A (en) * | 1983-12-26 | 1994-01-04 | Hitachi, Ltd. | Semiconductor integrated circuit device having protective/output elements and internal circuits |
DE3569172D1 (en) * | 1984-08-23 | 1989-05-03 | Toshiba Kk | Semiconductor memory device having a polycrystalline silicon layer |
US4947192A (en) * | 1988-03-07 | 1990-08-07 | Xerox Corporation | Monolithic silicon integrated circuit chip for a thermal ink jet printer |
US5151387A (en) * | 1990-04-30 | 1992-09-29 | Sgs-Thomson Microelectronics, Inc. | Polycrystalline silicon contact structure |
US5605853A (en) * | 1996-05-28 | 1997-02-25 | Taiwan Semiconductor Manufacturing Company Ltd. | Method of making a semiconductor device having 4 transistor SRAM and floating gate memory cells |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53109487A (en) * | 1977-03-07 | 1978-09-25 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS54155783A (en) * | 1978-05-29 | 1979-12-08 | Matsushita Electric Ind Co Ltd | Manufacture of insulating-gate type semiconductor device |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS606108B2 (ja) * | 1976-07-07 | 1985-02-15 | 株式会社東芝 | 半導体装置の製造方法 |
US4110776A (en) * | 1976-09-27 | 1978-08-29 | Texas Instruments Incorporated | Semiconductor integrated circuit with implanted resistor element in polycrystalline silicon layer |
US4125854A (en) * | 1976-12-02 | 1978-11-14 | Mostek Corporation | Symmetrical cell layout for static RAM |
JPS5828744B2 (ja) * | 1977-05-31 | 1983-06-17 | テキサス インスツルメンツ インコ−ポレイテツド | シリコンゲ−ト型集積回路デバイスおよびその製造方法 |
US4234889A (en) * | 1977-05-31 | 1980-11-18 | Texas Instruments Incorporated | Metal-to-moat contacts in N-channel silicon gate integrated circuits using discrete second-level polycrystalline silicon |
US4139785A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static memory cell with inverted field effect transistor |
US4139786A (en) * | 1977-05-31 | 1979-02-13 | Texas Instruments Incorporated | Static MOS memory cell using inverted N-channel field-effect transistor |
JPS5910581B2 (ja) * | 1977-12-01 | 1984-03-09 | 富士通株式会社 | 半導体装置の製造方法 |
US4178674A (en) * | 1978-03-27 | 1979-12-18 | Intel Corporation | Process for forming a contact region between layers of polysilicon with an integral polysilicon resistor |
US4180826A (en) * | 1978-05-19 | 1979-12-25 | Intel Corporation | MOS double polysilicon read-only memory and cell |
JPS5519857A (en) * | 1978-07-28 | 1980-02-12 | Nec Corp | Semiconductor |
US4297721A (en) * | 1978-11-03 | 1981-10-27 | Mostek Corporation | Extremely low current load device for integrated circuit |
US4319260A (en) * | 1979-09-05 | 1982-03-09 | Texas Instruments Incorporated | Multilevel interconnect system for high density silicon gate field effect transistors |
US4295897B1 (en) * | 1979-10-03 | 1997-09-09 | Texas Instruments Inc | Method of making cmos integrated circuit device |
US4305200A (en) * | 1979-11-06 | 1981-12-15 | Hewlett-Packard Company | Method of forming self-registering source, drain, and gate contacts for FET transistor structures |
US4336647A (en) * | 1979-12-21 | 1982-06-29 | Texas Instruments Incorporated | Method of making implant programmable N-channel read only memory |
-
1979
- 1979-12-30 JP JP17320179A patent/JPS5696850A/ja active Granted
-
1980
- 1980-12-18 EP EP80304587A patent/EP0032025B1/en not_active Expired
- 1980-12-18 DE DE8080304587T patent/DE3068271D1/de not_active Expired
- 1980-12-22 IE IE2706/80A patent/IE50949B1/en not_active IP Right Cessation
- 1980-12-29 CA CA000367608A patent/CA1150416A/en not_active Expired
- 1980-12-30 US US06/221,371 patent/US4399451A/en not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS53109487A (en) * | 1977-03-07 | 1978-09-25 | Matsushita Electric Ind Co Ltd | Manufacture for semiconductor device |
JPS54155783A (en) * | 1978-05-29 | 1979-12-08 | Matsushita Electric Ind Co Ltd | Manufacture of insulating-gate type semiconductor device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61224437A (ja) * | 1985-03-29 | 1986-10-06 | Toshiba Corp | 半導体装置およびその製造方法 |
JPS62283643A (ja) * | 1986-05-02 | 1987-12-09 | アドバンスト・マイクロ・デイバイシズ・インコ−ポレ−テツド | シリコンベースの半導体装置のためのコンタクト構造 |
Also Published As
Publication number | Publication date |
---|---|
IE802706L (en) | 1981-06-30 |
EP0032025B1 (en) | 1984-06-13 |
US4399451A (en) | 1983-08-16 |
EP0032025A1 (en) | 1981-07-15 |
CA1150416A (en) | 1983-07-19 |
DE3068271D1 (en) | 1984-07-19 |
JPS6243547B2 (ja) | 1987-09-14 |
IE50949B1 (en) | 1986-08-20 |
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