JPS5685848A - Manufacture of bipolar integrated circuit - Google Patents
Manufacture of bipolar integrated circuitInfo
- Publication number
- JPS5685848A JPS5685848A JP16324279A JP16324279A JPS5685848A JP S5685848 A JPS5685848 A JP S5685848A JP 16324279 A JP16324279 A JP 16324279A JP 16324279 A JP16324279 A JP 16324279A JP S5685848 A JPS5685848 A JP S5685848A
- Authority
- JP
- Japan
- Prior art keywords
- region
- type
- film
- layer
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000003990 capacitor Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
- H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
- H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
- H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/92—Capacitors having potential barriers
- H01L29/94—Metal-insulator-semiconductors, e.g. MOS
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16324279A JPS5685848A (en) | 1979-12-15 | 1979-12-15 | Manufacture of bipolar integrated circuit |
US06/213,919 US4377029A (en) | 1979-12-15 | 1980-12-08 | Process for fabricating a bipolar integrated circuit having capacitors |
DE8080107877T DE3069529D1 (en) | 1979-12-15 | 1980-12-12 | Process for fabricating a bipolar integrated circuit |
EP80107877A EP0031107B1 (en) | 1979-12-15 | 1980-12-12 | Process for fabricating a bipolar integrated circuit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP16324279A JPS5685848A (en) | 1979-12-15 | 1979-12-15 | Manufacture of bipolar integrated circuit |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5685848A true JPS5685848A (en) | 1981-07-13 |
Family
ID=15770042
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP16324279A Pending JPS5685848A (en) | 1979-12-15 | 1979-12-15 | Manufacture of bipolar integrated circuit |
Country Status (4)
Country | Link |
---|---|
US (1) | US4377029A (ja) |
EP (1) | EP0031107B1 (ja) |
JP (1) | JPS5685848A (ja) |
DE (1) | DE3069529D1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253256A (ja) * | 1984-05-30 | 1985-12-13 | Fujitsu Ltd | 半導体装置 |
JPH01183842A (ja) * | 1988-01-19 | 1989-07-21 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPH02137258A (ja) * | 1988-11-17 | 1990-05-25 | Sanyo Electric Co Ltd | 半導体集積回路の製造方法 |
Families Citing this family (34)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS57159055A (en) * | 1981-03-25 | 1982-10-01 | Toshiba Corp | Manufacture of semiconductor device |
JPS5941877A (ja) * | 1982-08-31 | 1984-03-08 | Junichi Nishizawa | フオトトランジスタ |
JPS59159560A (ja) * | 1983-03-01 | 1984-09-10 | Toshiba Corp | 半導体装置 |
JPS59171157A (ja) * | 1983-03-18 | 1984-09-27 | Hitachi Ltd | 半導体装置 |
JPS59181679A (ja) * | 1983-03-31 | 1984-10-16 | Nippon Denso Co Ltd | 半導体装置 |
JPS6018948A (ja) * | 1983-07-12 | 1985-01-31 | Nec Corp | 半導体集積回路装置 |
US4648909A (en) * | 1984-11-28 | 1987-03-10 | Fairchild Semiconductor Corporation | Fabrication process employing special masks for the manufacture of high speed bipolar analog integrated circuits |
US4571816A (en) * | 1984-12-11 | 1986-02-25 | Rca Corporation | Method of making a capacitor with standard self-aligned gate process |
JPS61158177A (ja) * | 1984-12-28 | 1986-07-17 | Toshiba Corp | 半導体装置 |
JPH061823B2 (ja) * | 1985-11-13 | 1994-01-05 | 日本電気株式会社 | 半導体集積回路 |
US4717678A (en) * | 1986-03-07 | 1988-01-05 | International Business Machines Corporation | Method of forming self-aligned P contact |
US4758873A (en) * | 1986-05-16 | 1988-07-19 | National Semiconductor Corporation | Balanced MOS capacitor with low stray capacitance and high ESD survival |
DE3632943A1 (de) * | 1986-09-27 | 1988-03-31 | Bosch Gmbh Robert | Hochfrequenz-leistungs-transistor in bipolar-epitaxial-technik |
NL8701357A (nl) * | 1987-06-11 | 1989-01-02 | Philips Nv | Halfgeleiderinrichting bevattende een condensator en een begraven passiveringslaag. |
DE3740302A1 (de) * | 1987-11-27 | 1989-06-08 | Telefunken Electronic Gmbh | Integrierte schaltungsanordnung |
GB2218565B (en) * | 1988-05-10 | 1992-04-01 | Stc Plc | Varicap diode structure |
US4898839A (en) * | 1988-11-15 | 1990-02-06 | Sanyo Electric Co., Ltd. | Semiconductor integrated circuit and manufacturing method therefor |
JPH06101540B2 (ja) * | 1989-05-19 | 1994-12-12 | 三洋電機株式会社 | 半導体集積回路の製造方法 |
US5005102A (en) * | 1989-06-20 | 1991-04-02 | Ramtron Corporation | Multilayer electrodes for integrated circuit capacitors |
US5175117A (en) * | 1991-12-23 | 1992-12-29 | Motorola, Inc. | Method for making buried isolation |
US5648281A (en) * | 1992-09-21 | 1997-07-15 | Siliconix Incorporated | Method for forming an isolation structure and a bipolar transistor on a semiconductor substrate |
US5405790A (en) * | 1993-11-23 | 1995-04-11 | Motorola, Inc. | Method of forming a semiconductor structure having MOS, bipolar, and varactor devices |
KR100360184B1 (ko) * | 1995-03-30 | 2003-01-15 | 산요 덴키 가부시키가이샤 | 반도체집적회로장치의제조방법 |
US5706163A (en) * | 1995-11-28 | 1998-01-06 | California Micro Devices Corporation | ESD-protected thin film capacitor structures |
KR970053932A (ko) * | 1995-12-08 | 1997-07-31 | 김광호 | 트랜지스터의 래치 전압을 이용한 정전 내력 향상 모스 축전기 |
EP0822601B1 (en) * | 1996-07-30 | 2006-05-24 | STMicroelectronics S.r.l. | MOS capacitor with wide voltage and frequency operating ranges |
US6146939A (en) | 1998-09-18 | 2000-11-14 | Tritech Microelectronics, Ltd. | Metal-polycrystalline silicon-N-well multiple layered capacitor |
US6828654B2 (en) * | 2001-12-27 | 2004-12-07 | Broadcom Corporation | Thick oxide P-gate NMOS capacitor for use in a phase-locked loop circuit and method of making same |
EP1560269A1 (en) * | 2004-01-30 | 2005-08-03 | Alcatel | MOS capacitor in an integrated semiconductor circuit |
JP2006059939A (ja) * | 2004-08-19 | 2006-03-02 | Fujitsu Ltd | Misキャパシタおよびmisキャパシタ作成方法 |
JP2018049907A (ja) * | 2016-09-21 | 2018-03-29 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN108987389B (zh) * | 2018-07-24 | 2020-10-16 | 佛山市劲电科技有限公司 | 一种电流保护芯片及其制作方法 |
JP7086018B2 (ja) * | 2019-03-12 | 2022-06-17 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
CN112002648A (zh) * | 2020-07-14 | 2020-11-27 | 全球能源互联网研究院有限公司 | 一种碳化硅功率器件的制备方法及碳化硅功率器件 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1208077A (en) * | 1967-05-19 | 1970-10-07 | Sperry Rand Corp | Semiconductor devices |
US3906539A (en) * | 1971-09-22 | 1975-09-16 | Philips Corp | Capacitance diode having a large capacitance ratio |
US4003076A (en) * | 1973-05-21 | 1977-01-11 | Signetics Corporation | Single bipolar transistor memory cell and method |
US4046605A (en) * | 1974-01-14 | 1977-09-06 | National Semiconductor Corporation | Method of electrically isolating individual semiconductor circuits in a wafer |
US4001869A (en) * | 1975-06-09 | 1977-01-04 | Sprague Electric Company | Mos-capacitor for integrated circuits |
US4057894A (en) * | 1976-02-09 | 1977-11-15 | Rca Corporation | Controllably valued resistor |
US4021270A (en) * | 1976-06-28 | 1977-05-03 | Motorola, Inc. | Double master mask process for integrated circuit manufacture |
US4106048A (en) * | 1977-04-27 | 1978-08-08 | Rca Corp. | Integrated circuit protection device comprising diode having large contact area in shunt with protected bipolar transistor |
SU773793A1 (ru) * | 1977-11-02 | 1980-10-23 | Предприятие П/Я -6429 | Способ изготовлени полупроводниковых интегральных бипол рных схем |
US4155778A (en) * | 1977-12-30 | 1979-05-22 | International Business Machines Corporation | Forming semiconductor devices having ion implanted and diffused regions |
US4245231A (en) * | 1978-12-26 | 1981-01-13 | Motorola Inc. | Combination capacitor and transistor structure for use in monolithic circuits |
-
1979
- 1979-12-15 JP JP16324279A patent/JPS5685848A/ja active Pending
-
1980
- 1980-12-08 US US06/213,919 patent/US4377029A/en not_active Expired - Lifetime
- 1980-12-12 EP EP80107877A patent/EP0031107B1/en not_active Expired
- 1980-12-12 DE DE8080107877T patent/DE3069529D1/de not_active Expired
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS60253256A (ja) * | 1984-05-30 | 1985-12-13 | Fujitsu Ltd | 半導体装置 |
JPH0512861B2 (ja) * | 1984-05-30 | 1993-02-19 | Fujitsu Ltd | |
JPH01183842A (ja) * | 1988-01-19 | 1989-07-21 | Sanyo Electric Co Ltd | 半導体集積回路 |
JPH02137258A (ja) * | 1988-11-17 | 1990-05-25 | Sanyo Electric Co Ltd | 半導体集積回路の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
US4377029A (en) | 1983-03-22 |
DE3069529D1 (en) | 1984-11-29 |
EP0031107A1 (en) | 1981-07-01 |
EP0031107B1 (en) | 1984-10-24 |
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