JPS57103345A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57103345A
JPS57103345A JP18006280A JP18006280A JPS57103345A JP S57103345 A JPS57103345 A JP S57103345A JP 18006280 A JP18006280 A JP 18006280A JP 18006280 A JP18006280 A JP 18006280A JP S57103345 A JPS57103345 A JP S57103345A
Authority
JP
Japan
Prior art keywords
resistor
region
film
forming region
type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18006280A
Other languages
Japanese (ja)
Inventor
Masayuki Hashimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Faurecia Clarion Electronics Co Ltd
Original Assignee
Clarion Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Clarion Co Ltd filed Critical Clarion Co Ltd
Priority to JP18006280A priority Critical patent/JPS57103345A/en
Publication of JPS57103345A publication Critical patent/JPS57103345A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658—Vertical bipolar transistor in combination with resistors or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Transistors (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

PURPOSE:To improve the yield of manufacturing a semiconductor device by removing the surface layer of an insulating film in a wide range from a resistor forming region after diffusing an emitter, then opening the prescribed region of the insulating film, implanting ions, and reducing the irregularity of the resistor. CONSTITUTION:An N type epitaxial layer 5 is grown, for example, on a P type substrate 1, and a P type isolating layer 6 is diffused to form an element forming region. Windows 8, 9 are opended at the oxidized film 7 on the resistor forming region of a substrate 1, and P type diffused layers 3, 4 are formed at the resistor terminal in the step of diffusing a base. Subsequently, the step of forming an emitter is performed, an oxidized film is formed in the holes 8, 9. In this state, the surface of the film 7 doped with an impurity on the region 11 covering the resistor 2 is photoetched. Then, the film 7 of desired resistor forming region is removed, and B ions are, for example, implanted to form a resistor 2. Thus, it can eliminate the undercut at the insulating film 7 on the implanted region, thereby reducing the irregularity of the resistor.
JP18006280A 1980-12-18 1980-12-18 Manufacture of semiconductor device Pending JPS57103345A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18006280A JPS57103345A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18006280A JPS57103345A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57103345A true JPS57103345A (en) 1982-06-26

Family

ID=16076808

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18006280A Pending JPS57103345A (en) 1980-12-18 1980-12-18 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57103345A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63268264A (en) * 1987-04-24 1988-11-04 Nec Yamagata Ltd Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63268264A (en) * 1987-04-24 1988-11-04 Nec Yamagata Ltd Manufacture of semiconductor device

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