JPS56150876A - Photovoltaic device - Google Patents

Photovoltaic device

Info

Publication number
JPS56150876A
JPS56150876A JP5496480A JP5496480A JPS56150876A JP S56150876 A JPS56150876 A JP S56150876A JP 5496480 A JP5496480 A JP 5496480A JP 5496480 A JP5496480 A JP 5496480A JP S56150876 A JPS56150876 A JP S56150876A
Authority
JP
Japan
Prior art keywords
layer
type
region
impurity
density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5496480A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0226394B2 (enrdf_load_stackoverflow
Inventor
Yukinori Kuwano
Terutoyo Imai
Michitoshi Onishi
Hidenori Nishiwaki
Shinya Tsuda
Takashi Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP5496480A priority Critical patent/JPS56150876A/ja
Publication of JPS56150876A publication Critical patent/JPS56150876A/ja
Publication of JPH0226394B2 publication Critical patent/JPH0226394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP5496480A 1980-04-24 1980-04-24 Photovoltaic device Granted JPS56150876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5496480A JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5496480A JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Publications (2)

Publication Number Publication Date
JPS56150876A true JPS56150876A (en) 1981-11-21
JPH0226394B2 JPH0226394B2 (enrdf_load_stackoverflow) 1990-06-08

Family

ID=12985339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5496480A Granted JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPS56150876A (enrdf_load_stackoverflow)

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246948A1 (de) * 1982-04-27 1983-10-27 RCA Corp., 10020 New York, N.Y. Fotozelle
JPS595679A (ja) * 1982-07-01 1984-01-12 Matsushita Electric Ind Co Ltd 光電変換装置
JPS5914679A (ja) * 1982-07-16 1984-01-25 Toshiba Corp 光起電力装置
JPS5996775A (ja) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol 非晶質シリコン光電変換装置
JPS59107574A (ja) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池の製造方法
JPS59163876A (ja) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池
JPS6050972A (ja) * 1983-08-31 1985-03-22 Agency Of Ind Science & Technol 薄膜太陽電池
JPS60239068A (ja) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd 光起電力装置
JPS61222278A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置
JPS6293983A (ja) * 1985-10-19 1987-04-30 Sanyo Electric Co Ltd 光起電力装置
JPS62115785A (ja) * 1985-11-14 1987-05-27 Kanegafuchi Chem Ind Co Ltd 半導体装置
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
US4728370A (en) * 1985-08-29 1988-03-01 Sumitomo Electric Industries, Inc. Amorphous photovoltaic elements
JPS63244888A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS63244889A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2004327496A (ja) * 2003-04-21 2004-11-18 Asahi Glass Co Ltd 太陽電池およびその製造方法
CN102447000A (zh) * 2011-12-14 2012-05-09 杭州赛昂电力有限公司 薄膜太阳能电池及其形成方法

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246948A1 (de) * 1982-04-27 1983-10-27 RCA Corp., 10020 New York, N.Y. Fotozelle
JPS58192387A (ja) * 1982-04-27 1983-11-09 ア−ルシ−エ−　コ−ポレ−シヨン 光電池
JPS595679A (ja) * 1982-07-01 1984-01-12 Matsushita Electric Ind Co Ltd 光電変換装置
JPS5914679A (ja) * 1982-07-16 1984-01-25 Toshiba Corp 光起電力装置
JPS5996775A (ja) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol 非晶質シリコン光電変換装置
JPS59107574A (ja) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池の製造方法
JPS59163876A (ja) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
JPS6050972A (ja) * 1983-08-31 1985-03-22 Agency Of Ind Science & Technol 薄膜太陽電池
JPS60239068A (ja) * 1984-05-11 1985-11-27 Sanyo Electric Co Ltd 光起電力装置
JPS61222278A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置
US4728370A (en) * 1985-08-29 1988-03-01 Sumitomo Electric Industries, Inc. Amorphous photovoltaic elements
JPS6293983A (ja) * 1985-10-19 1987-04-30 Sanyo Electric Co Ltd 光起電力装置
JPS62115785A (ja) * 1985-11-14 1987-05-27 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS63244888A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JPS63244889A (ja) * 1987-03-31 1988-10-12 Kanegafuchi Chem Ind Co Ltd 半導体装置
JP2004327496A (ja) * 2003-04-21 2004-11-18 Asahi Glass Co Ltd 太陽電池およびその製造方法
CN102447000A (zh) * 2011-12-14 2012-05-09 杭州赛昂电力有限公司 薄膜太阳能电池及其形成方法

Also Published As

Publication number Publication date
JPH0226394B2 (enrdf_load_stackoverflow) 1990-06-08

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