JPH0226394B2 - - Google Patents

Info

Publication number
JPH0226394B2
JPH0226394B2 JP55054964A JP5496480A JPH0226394B2 JP H0226394 B2 JPH0226394 B2 JP H0226394B2 JP 55054964 A JP55054964 A JP 55054964A JP 5496480 A JP5496480 A JP 5496480A JP H0226394 B2 JPH0226394 B2 JP H0226394B2
Authority
JP
Japan
Prior art keywords
type
layer
impurity concentration
region
gas
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP55054964A
Other languages
English (en)
Japanese (ja)
Other versions
JPS56150876A (en
Inventor
Yukinori Kuwano
Terutoyo Imai
Michitoshi Oonishi
Hidenori Nishiwaki
Shinya Tsuda
Takashi Shibuya
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP5496480A priority Critical patent/JPS56150876A/ja
Publication of JPS56150876A publication Critical patent/JPS56150876A/ja
Publication of JPH0226394B2 publication Critical patent/JPH0226394B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/17—Photovoltaic cells having only PIN junction potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP5496480A 1980-04-24 1980-04-24 Photovoltaic device Granted JPS56150876A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5496480A JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5496480A JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Publications (2)

Publication Number Publication Date
JPS56150876A JPS56150876A (en) 1981-11-21
JPH0226394B2 true JPH0226394B2 (enrdf_load_stackoverflow) 1990-06-08

Family

ID=12985339

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5496480A Granted JPS56150876A (en) 1980-04-24 1980-04-24 Photovoltaic device

Country Status (1)

Country Link
JP (1) JPS56150876A (enrdf_load_stackoverflow)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4453173A (en) * 1982-04-27 1984-06-05 Rca Corporation Photocell utilizing a wide-bandgap semiconductor material
JPS595679A (ja) * 1982-07-01 1984-01-12 Matsushita Electric Ind Co Ltd 光電変換装置
JPS5914679A (ja) * 1982-07-16 1984-01-25 Toshiba Corp 光起電力装置
JPS5996775A (ja) * 1982-11-25 1984-06-04 Agency Of Ind Science & Technol 非晶質シリコン光電変換装置
JPS59107574A (ja) * 1982-12-13 1984-06-21 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池の製造方法
JPS59163876A (ja) * 1983-03-08 1984-09-14 Agency Of Ind Science & Technol アモルフアスシリコン太陽電池
US4692558A (en) * 1983-05-11 1987-09-08 Chronar Corporation Counteraction of semiconductor impurity effects
JPS6050972A (ja) * 1983-08-31 1985-03-22 Agency Of Ind Science & Technol 薄膜太陽電池
JPH0620147B2 (ja) * 1984-05-11 1994-03-16 三洋電機株式会社 光起電力装置
JPS61222278A (ja) * 1985-03-28 1986-10-02 Sanyo Electric Co Ltd 光起電力装置
JPS6249672A (ja) * 1985-08-29 1987-03-04 Sumitomo Electric Ind Ltd アモルフアス光起電力素子
JPS6293983A (ja) * 1985-10-19 1987-04-30 Sanyo Electric Co Ltd 光起電力装置
JP2545066B2 (ja) * 1985-11-14 1996-10-16 鐘淵化学工業株式会社 半導体装置
JP2634811B2 (ja) * 1987-03-31 1997-07-30 鐘淵化学工業 株式会社 半導体装置
JP2634812B2 (ja) * 1987-03-31 1997-07-30 鐘淵化学工業 株式会社 半導体装置
JP4529370B2 (ja) * 2003-04-21 2010-08-25 旭硝子株式会社 太陽電池およびその製造方法
CN102447000A (zh) * 2011-12-14 2012-05-09 杭州赛昂电力有限公司 薄膜太阳能电池及其形成方法

Also Published As

Publication number Publication date
JPS56150876A (en) 1981-11-21

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