JPH0370183A - 光起電力素子 - Google Patents

光起電力素子

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Publication number
JPH0370183A
JPH0370183A JP1206143A JP20614389A JPH0370183A JP H0370183 A JPH0370183 A JP H0370183A JP 1206143 A JP1206143 A JP 1206143A JP 20614389 A JP20614389 A JP 20614389A JP H0370183 A JPH0370183 A JP H0370183A
Authority
JP
Japan
Prior art keywords
layer
crystal layer
type
amorphous
fine crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1206143A
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English (en)
Other versions
JP2740284B2 (ja
Inventor
Masayuki Iwamoto
岩本　正幸
Koji Minami
浩二 南
Toshihiko Yamaoki
山置　俊彦
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP1206143A priority Critical patent/JP2740284B2/ja
Priority to US07/563,567 priority patent/US5066340A/en
Priority to FR909010210A priority patent/FR2650916B1/fr
Priority to DE4025311A priority patent/DE4025311A1/de
Publication of JPH0370183A publication Critical patent/JPH0370183A/ja
Application granted granted Critical
Publication of JP2740284B2 publication Critical patent/JP2740284B2/ja
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic Table including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)

Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。

Description

【発明の詳細な説明】 （イ）産業上の利用分野 本発明は、結晶系シリコン半導体層と非晶質シリコン系
半導体層を備える光起電力素子に関する。
（ロ）従来の技術 米国特許第＋、４９６．７　ｓ　ｓ号に示された如く、
単結晶又は多結晶の結晶系のシリコン基板上に、非晶質
シリコン層を積層したヘテロ接合型光起電力素子が知ら
れている。
この光起電力素子は結晶層と非晶質層との間により多く
の界面準位が発生し、そのためにキャリアが再結合する
結果、高い変換効率を得るに至っていない。
また、結晶シリコンと非晶質シリコンでは、禁制帯幅の
大きな違いから光励起されたキャリアが界面付近で閉じ
込められ再結合してしまうため、光電流として十分に取
り出せないでいた。更に、結晶シリコンと非晶質シリコ
ンとの格子不整合により界面付近に未結合手が多数存在
して再結合を増大させる原因となっていた。
（ハ）発明が解決しようとする課題 本発明は上述のように、結晶系シリコン半導体と非晶質
シリコン系半導体とのへテロ接合太陽電池において、禁
制帯幅の大きな違い及び格子不整合によって光電流が取
り出されないため前記太陽電池の変換効率が不十分な点
を解決しようとするものである。
（ニ）課題を解決するための手段 本発明は上記課題を解決するために、結晶系シリコン半
導体からなる一導電型の結晶層と、非晶質シリコン系半
導体からなる逆導電型の非晶質層と、この非晶質層と上
記結晶層との間に設けられた実質的に真性な微結晶シリ
コン系半導体からなる微結晶層と、を備えることを特徴
とする。
（ホ）作用 上述の如く非晶質層と結晶層との間に設けられる微結晶
層は、光学的禁制ＪｉＦ幅が両層の中間値を備えるばか
りか、実質的に真性とすることで低界面準位の膜質を呈
することによって、非晶質層と結晶層との格子不整合等
を緩和するバッファ層として作用する。
（へ）実施例 第１図は本発明による光起電力素子の一実施例を示し、
（１）は膜厚数μｍ〜数１００μｍの単結晶または多結
晶の結晶系シリコン半導体からなるｐ型またはｎ型の結
晶層、（２）は前記結晶層（１）上に設けられた粒径１
００〜１０００人程度の膜厚約５００Å以下の微結晶シ
リコン系半導体からなる微結晶層で、当該微結晶層（２
）はボロンやリン等の導電型決定不純物を全く含まない
真性型かまたは僅かに含んだスライトリドープな層で、
これらを総称して本発明では実質的に真性という。（３
）は前記微結晶層（２）上に設けられた膜厚５００〜５
０００人程度の非晶質シリコン系半導体からなる結晶層
（１）と逆導電型、即ちｎ型またはｐ型の非晶質層、（
４）は前記非晶質層（３）の露出表面を覆うＳｎｏｗ、
ＩＴｏ、ＺｎＯ等の透光性導電酸化物からなる受光面電
極、（５）は前記受光面電極（４）と共に非晶質層（３
）乃至結晶層（１）を挟むオーミック金属からなる背面
電極である。
上記構造の光起電力素子は、ｐ型またはｎ型の結晶層（
１）を基板とし、５ＩＨ４ガスを主原料ガスとしてプラ
ズマＣＶＤ法により微結晶層（２）、ｎ型またはｐ型の
非晶質層（３）が形成される。具体的には微結晶層（２
）については、ＳｉＨ，／Ｈ，＝０．０５のガス組成化
、基板温度１８０〜４００　’Ｃの条件で粒径１００〜
１ｏｏｏ人程度の膜が得られ、非晶質層（３）にライて
はｐ型のときＢｔＨｓ／　ＳｉＨ４ガス、０１〜０．０
５のガス組成化、基板温度１８０’Ｃの条件で、またｎ
型のときＰ　Ｈ、／　Ｓ　ｉＨ４＝Ｏ，０Ｏ１−０，０
５ノガス組戊比、基板温度２００℃の条件で形成される
。
例えば、光学的禁制帯幅１．１〜１．２ｅＶの結晶層（
１）上に、微結晶層（２）として上記条件で膜厚２００
　Ａ光学的禁制帯幅１．４〜１．５ｅＶの膜を形成し、
非晶質層（３）として膜厚２０００人光学的禁制帯幅】
、６〜１．８ｅＶの膜を積層した有効面積１．　Ｃｍ″
の光起電力素子について、開放電圧■。。、短絡電流■
ｓｃ、フィルタファクタＦ、Ｆ、、変換効率ηの光起電
力素子特性をＡ　Ｍ　−１，１００ｍ　Ｗ　／　ｃｍ　
’の光照射条件で測定した。また、本発明実施例装置か
ら微結晶層（２）゛を除き、非晶質層（３）の膜厚を２
２００人とした以外は同一構造の比較例についても同一
条件の下で特性を測定した。その結果を下に示す。
このように本発明の実施例装置にあっては、全ての特性
において比較例装置を上回り、特に高い変換効率が得ら
れた。この結果について、本発明者らは、結晶層（１）
と非晶質層（３）との間に実質的に真性とし準位の低減
した微結晶層（２）を配押し、しかもこの微結晶層（２
）は光学的禁制帯幅が両層（１）（３）の中間値を備え
ることによって、界面における準位の低減ばかりか障壁
の緩和によるものと考察している。
尚、上記微結晶層（２）はプラズマＣＶＤ法によって、
形成されていたが、他の方法例えばＳｉＨ４ガスを主原
料ガスとする基板温度ＳＯＯ〜７００’Ｃの熱ＣＶＤ法
で形成しても良い。
（ト）発明の効果 本発明は以上の説明から明らかな如く、微結晶層は非晶
質層と結晶層との界面特性を改善することによって、光
起電力特性の向上を図ることができる。
【図面の簡単な説明】
第１図は本発明光起電力素子の模式的断面図である。

Claims (1)

    【特許請求の範囲】
  1. （１）結晶系シリコン半導体からなる一導電型の結晶層
    と、非晶質シリコン系半導体からなる逆導電型の非晶質
    層と、この非晶質層と上記結晶層との間に設けられた実
    質的に真性な微結晶シリコン系半導体からなる微結晶層
    と、を備えることを特徴とする光起電力素子。
JP1206143A 1989-08-09 1989-08-09 光起電力素子 Expired - Lifetime JP2740284B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP1206143A JP2740284B2 (ja) 1989-08-09 1989-08-09 光起電力素子
US07/563,567 US5066340A (en) 1989-08-09 1990-08-06 Photovoltaic device
FR909010210A FR2650916B1 (fr) 1989-08-09 1990-08-09 Dispositif photovoltaique
DE4025311A DE4025311A1 (de) 1989-08-09 1990-08-09 Fotovoltaische einrichtung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1206143A JP2740284B2 (ja) 1989-08-09 1989-08-09 光起電力素子

Publications (2)

Publication Number Publication Date
JPH0370183A true JPH0370183A (ja) 1991-03-26
JP2740284B2 JP2740284B2 (ja) 1998-04-15

Family

ID=16518505

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1206143A Expired - Lifetime JP2740284B2 (ja) 1989-08-09 1989-08-09 光起電力素子

Country Status (4)

Country Link
US (1) US5066340A (ja)
JP (1) JP2740284B2 (ja)
DE (1) DE4025311A1 (ja)
FR (1) FR2650916B1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO1998043304A1 (fr) * 1997-03-21 1998-10-01 Sanyo Electric Co., Ltd. Element photovoltaique et procede de fabrication dudit element
US7501305B2 (en) 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
JP2017525136A (ja) * 2014-06-27 2017-08-31 トータル マーケティング サービスィズ 結晶シリコンを用いた太陽電池の受光面のパッシベーション

Families Citing this family (43)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5213628A (en) * 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPH04275467A (ja) * 1991-03-04 1992-10-01 Sanyo Electric Co Ltd フォトトランジスタ
US5705828A (en) * 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
CN1032099C (zh) * 1992-03-26 1996-06-19 松下电器产业株式会社 通信系统
US5419783A (en) * 1992-03-26 1995-05-30 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method therefor
US5584941A (en) * 1994-03-22 1996-12-17 Canon Kabushiki Kaisha Solar cell and production process therefor
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
JP2002134772A (ja) * 2000-10-24 2002-05-10 Canon Inc シリコン系薄膜及び光起電力素子
EP1398837A1 (en) * 2002-09-09 2004-03-17 Interuniversitair Microelektronica Centrum ( Imec) Photovoltaic device
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FR2650916A1 (fr) 1991-02-15
JP2740284B2 (ja) 1998-04-15
DE4025311A1 (de) 1991-02-14

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