JP2017525136A - 結晶シリコンを用いた太陽電池の受光面のパッシベーション - Google Patents
結晶シリコンを用いた太陽電池の受光面のパッシベーション Download PDFInfo
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- JP2017525136A JP2017525136A JP2016569968A JP2016569968A JP2017525136A JP 2017525136 A JP2017525136 A JP 2017525136A JP 2016569968 A JP2016569968 A JP 2016569968A JP 2016569968 A JP2016569968 A JP 2016569968A JP 2017525136 A JP2017525136 A JP 2017525136A
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- 238000002161 passivation Methods 0.000 title claims abstract description 68
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 168
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 167
- 239000010703 silicon Substances 0.000 claims abstract description 167
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 104
- 229910021424 microcrystalline silicon Inorganic materials 0.000 claims abstract description 102
- 238000000034 method Methods 0.000 claims abstract description 52
- 239000006117 anti-reflective coating Substances 0.000 claims description 43
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 32
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 27
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 18
- 238000000151 deposition Methods 0.000 claims description 18
- 238000012876 topography Methods 0.000 claims description 18
- 238000004519 manufacturing process Methods 0.000 claims description 17
- 235000012239 silicon dioxide Nutrition 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 11
- 238000007254 oxidation reaction Methods 0.000 claims description 11
- 239000002019 doping agent Substances 0.000 claims description 10
- 238000000231 atomic layer deposition Methods 0.000 claims description 8
- 230000005855 radiation Effects 0.000 claims description 6
- 229910017107 AlOx Inorganic materials 0.000 claims description 5
- 238000006243 chemical reaction Methods 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 101100207343 Antirrhinum majus 1e20 gene Proteins 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 377
- 230000007246 mechanism Effects 0.000 description 14
- 239000000463 material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 11
- 238000010586 diagram Methods 0.000 description 9
- 230000008021 deposition Effects 0.000 description 7
- 239000012535 impurity Substances 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 238000006731 degradation reaction Methods 0.000 description 4
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 230000009466 transformation Effects 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000000137 annealing Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000002784 hot electron Substances 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 230000001603 reducing effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 2
- 239000011888 foil Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000005224 laser annealing Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910018557 Si O Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000004069 differentiation Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Inorganic materials [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000003595 spectral effect Effects 0.000 description 1
- 230000002123 temporal effect Effects 0.000 description 1
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Abstract
Description
[項目1]
受光面を有するシリコン基板と、
上記シリコン基板の上記受光面の上方に配置されている真性シリコン層と、
上記真性シリコン層上に配置されているN型のシリコン層であって、上記真性シリコン層及び上記N型のシリコン層のうちの一方又は両方が、微結晶シリコン層又は多結晶シリコン層である、N型のシリコン層と
を備える、太陽電池。
[項目2]
上記N型のシリコン層は、およそ0.1〜0.9の範囲内の結晶画分と、非晶質の残部とを有するN型の微結晶シリコン層又は多結晶シリコン層である、項目1に記載の太陽電池。
[項目3]
上記N型の微結晶シリコン層又は多結晶シリコン層におけるN型のドーパントの濃度が、およそ1E17〜1E20原子/cm3の範囲内である、項目2に記載の太陽電池。
[項目4]
上記シリコン基板の上記受光面上に配置されたパッシベーション誘電体層を更に備え、上記真性シリコン層が、上記パッシベーション誘電体層上に配置されている、項目1に記載の太陽電池。
[項目5]
上記パッシベーション誘電体層は、およそ10〜200オングストロームの範囲内の厚さを有する二酸化ケイ素(SiO2)層である、項目4に記載の太陽電池。
[項目6]
上記N型のシリコン層上に配置された反射防止コーティング(ARC)層を更に備える、項目1に記載の太陽電池。
[項目7]
上記受光面は、テクスチャ化されたトポグラフィーを有しており、上記真性シリコン層及び上記N型のシリコン層の両方は、上記受光面の上記テクスチャ化されたトポグラフィーと共形である、項目1に記載の太陽電池。
[項目8]
上記基板は、上記受光面とは反対側にある裏面を更に有しており、上記太陽電池は、
上記基板の上記裏面における又は上記基板の上記裏面の上方の、複数の交互のN型の半導体領域及びP型の半導体領域と、
上記複数の交互のN型の半導体領域及びP型の半導体領域に電気的に接続されている導電性コンタクト構造体と
を更に備える、項目1に記載の太陽電池。
[項目9]
受光面を有するシリコン基板と、
上記シリコン基板の上記受光面上に配置されたパッシベーション誘電体層と、
上記パッシベーション誘電体層上に配置されたN型の微結晶シリコン層又は多結晶シリコン層と
を備える、太陽電池。
[項目10]
上記N型の微結晶シリコン層又は多結晶シリコン層は、およそ0.1〜0.9の範囲内の結晶画分と、非晶質の残部とを有する、項目9に記載の太陽電池。
[項目11]
上記N型の微結晶シリコン層又は多結晶シリコン層におけるN型のドーパントの濃度が、およそ1e17〜1e20原子/cm3の範囲内である、項目10に記載の太陽電池。
[項目12]
上記N型の微結晶シリコン層又は多結晶シリコン層上に配置された反射防止コーティング(ARC)層を更に備える、
項目9に記載の太陽電池。
[項目13]
上記パッシベーション誘電体層が、およそ10〜200オングストロームの範囲内の厚さを有する二酸化ケイ素(SiO2)層である、項目9に記載の太陽電池。
[項目14]
上記基板の上記受光面は、テクスチャ化されたトポグラフィーを有しており、上記N型の微結晶シリコン層又は多結晶シリコン層は、上記受光面の上記テクスチャ化されたトポグラフィーと共形である、項目9に記載の太陽電池。
[項目15]
上記基板は、上記受光面とは反対側にある裏面を更に有しており、上記太陽電池は、
上記基板の上記裏面における又は上記基板の上記裏面の上方の、複数の交互のN型の半導体領域及びP型の半導体領域と、
上記複数の交互のN型の半導体領域及びP型の半導体領域に電気的に接続されている導電性コンタクト構造体と
を更に備える、項目9に記載の太陽電池。
[項目16]
太陽電池を製造する方法であって、
シリコン基板の受光面上にパッシベーション誘電体層を形成する工程と、
上記パッシベーション誘電体層の上方にN型の微結晶シリコン層又は多結晶シリコン層を形成する工程と、
上記N型の微結晶シリコン層又は多結晶シリコン層上に反射防止コーティング(ARC)層を形成する工程と
を備える、方法。
[項目17]
N型の微結晶シリコン層又は多結晶シリコン層を形成する工程は、N型の非晶質シリコン層を堆積させる工程と、その後、上記N型の非晶質シリコン層を、上記N型の微結晶シリコン層又は多結晶シリコン層に相変換する工程とを有する、項目16に記載の方法。
[項目18]
N型の微結晶シリコン層又は多結晶シリコン層を形成する工程は、上記N型の微結晶シリコン層又は多結晶シリコン層を堆積させる工程を有する、項目16に記載の方法。
[項目19]
上記パッシベーション誘電体層上に真性の微結晶シリコン層若しくは多結晶シリコン層又は非晶質シリコン層を形成する工程を更に備え、上記N型の微結晶シリコン層又は多結晶シリコン層を形成する工程は、上記真性の微結晶シリコン層若しくは多結晶シリコン層又は非晶質シリコン層上に形成する工程を有する、項目16に記載の方法。
[項目20]
上記パッシベーション誘電体層を形成する工程は、上記シリコン基板の上記受光面の一部分の化学酸化、二酸化ケイ素(SiO2)のプラズマ強化化学蒸着法(PECVD)、SiO2又はAlOxの原子層堆積法(ALD)、上記シリコン基板の上記受光面の一部分の熱酸化、及び、上記シリコン基板の上記受光面のO2又はO3環境で紫外線(UV)放射への暴露からなる群から選択される手法を使用する工程を有する、項目16に記載の方法。
[項目21]
項目16に記載の方法に従って製造される太陽電池。
Claims (21)
- 受光面を有するシリコン基板と、
前記シリコン基板の前記受光面の上方に配置されている真性シリコン層と、
前記真性シリコン層上に配置されているN型のシリコン層であって、前記真性シリコン層及び前記N型のシリコン層のうちの一方又は両方が、微結晶シリコン層又は多結晶シリコン層である、N型のシリコン層と
を備える、太陽電池。 - 前記N型のシリコン層は、およそ0.1〜0.9の範囲内の結晶画分と、非晶質の残部とを有するN型の微結晶シリコン層又は多結晶シリコン層である、請求項1に記載の太陽電池。
- 前記N型の微結晶シリコン層又は多結晶シリコン層におけるN型のドーパントの濃度が、およそ1E17〜1E20原子/cm3の範囲内である、請求項2に記載の太陽電池。
- 前記シリコン基板の前記受光面上に配置されたパッシベーション誘電体層を更に備え、前記真性シリコン層が、前記パッシベーション誘電体層上に配置されている、請求項1に記載の太陽電池。
- 前記パッシベーション誘電体層は、およそ10〜200オングストロームの範囲内の厚さを有する二酸化ケイ素(SiO2)層である、請求項4に記載の太陽電池。
- 前記N型のシリコン層上に配置された反射防止コーティング(ARC)層を更に備える、請求項1に記載の太陽電池。
- 前記受光面は、テクスチャ化されたトポグラフィーを有しており、前記真性シリコン層及び前記N型のシリコン層の両方は、前記受光面の前記テクスチャ化されたトポグラフィーと共形である、請求項1に記載の太陽電池。
- 前記基板は、前記受光面とは反対側にある裏面を更に有しており、前記太陽電池は、
前記基板の前記裏面における又は前記基板の前記裏面の上方の、複数の交互のN型の半導体領域及びP型の半導体領域と、
前記複数の交互のN型の半導体領域及びP型の半導体領域に電気的に接続されている導電性コンタクト構造体と
を更に備える、請求項1に記載の太陽電池。 - 受光面を有するシリコン基板と、
前記シリコン基板の前記受光面上に配置されたパッシベーション誘電体層と、
前記パッシベーション誘電体層上に配置されたN型の微結晶シリコン層又は多結晶シリコン層と
を備える、太陽電池。 - 前記N型の微結晶シリコン層又は多結晶シリコン層は、およそ0.1〜0.9の範囲内の結晶画分と、非晶質の残部とを有する、請求項9に記載の太陽電池。
- 前記N型の微結晶シリコン層又は多結晶シリコン層におけるN型のドーパントの濃度が、およそ1e17〜1e20原子/cm3の範囲内である、請求項10に記載の太陽電池。
- 前記N型の微結晶シリコン層又は多結晶シリコン層上に配置された反射防止コーティング(ARC)層を更に備える、
請求項9に記載の太陽電池。 - 前記パッシベーション誘電体層が、およそ10〜200オングストロームの範囲内の厚さを有する二酸化ケイ素(SiO2)層である、請求項9に記載の太陽電池。
- 前記基板の前記受光面は、テクスチャ化されたトポグラフィーを有しており、前記N型の微結晶シリコン層又は多結晶シリコン層は、前記受光面の前記テクスチャ化されたトポグラフィーと共形である、請求項9に記載の太陽電池。
- 前記基板は、前記受光面とは反対側にある裏面を更に有しており、前記太陽電池は、
前記基板の前記裏面における又は前記基板の前記裏面の上方の、複数の交互のN型の半導体領域及びP型の半導体領域と、
前記複数の交互のN型の半導体領域及びP型の半導体領域に電気的に接続されている導電性コンタクト構造体と
を更に備える、請求項9に記載の太陽電池。 - 太陽電池を製造する方法であって、
シリコン基板の受光面上にパッシベーション誘電体層を形成する工程と、
前記パッシベーション誘電体層の上方にN型の微結晶シリコン層又は多結晶シリコン層を形成する工程と、
前記N型の微結晶シリコン層又は多結晶シリコン層上に反射防止コーティング(ARC)層を形成する工程と
を備える、方法。 - N型の微結晶シリコン層又は多結晶シリコン層を形成する工程は、N型の非晶質シリコン層を堆積させる工程と、その後、前記N型の非晶質シリコン層を、前記N型の微結晶シリコン層又は多結晶シリコン層に相変換する工程とを有する、請求項16に記載の方法。
- N型の微結晶シリコン層又は多結晶シリコン層を形成する工程は、前記N型の微結晶シリコン層又は多結晶シリコン層を堆積させる工程を有する、請求項16に記載の方法。
- 前記パッシベーション誘電体層上に真性の微結晶シリコン層若しくは多結晶シリコン層又は非晶質シリコン層を形成する工程を更に備え、前記N型の微結晶シリコン層又は多結晶シリコン層を形成する工程は、前記真性の微結晶シリコン層若しくは多結晶シリコン層又は非晶質シリコン層上に形成する工程を有する、請求項16に記載の方法。
- 前記パッシベーション誘電体層を形成する工程は、前記シリコン基板の前記受光面の一部分の化学酸化、二酸化ケイ素(SiO2)のプラズマ強化化学蒸着法(PECVD)、SiO2又はAlOxの原子層堆積法(ALD)、前記シリコン基板の前記受光面の一部分の熱酸化、及び、前記シリコン基板の前記受光面のO2又はO3環境で紫外線(UV)放射への暴露からなる群から選択される手法を使用する工程を有する、請求項16に記載の方法。
- 請求項16に記載の方法に従って製造される太陽電池。
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US14/317,672 US20150380581A1 (en) | 2014-06-27 | 2014-06-27 | Passivation of light-receiving surfaces of solar cells with crystalline silicon |
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CL (1) | CL2016003286A1 (ja) |
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2014
- 2014-06-27 US US14/317,672 patent/US20150380581A1/en not_active Abandoned
-
2015
- 2015-06-25 MX MX2016013691A patent/MX2016013691A/es active IP Right Grant
- 2015-06-25 BR BR112016025280A patent/BR112016025280A2/pt not_active Application Discontinuation
- 2015-06-25 EP EP15812793.6A patent/EP3161874B1/en active Active
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Publication number | Publication date |
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TWI685117B (zh) | 2020-02-11 |
AU2015279725A1 (en) | 2016-09-29 |
US20150380581A1 (en) | 2015-12-31 |
EP3161874A4 (en) | 2017-05-24 |
CN113571590A (zh) | 2021-10-29 |
SG11201610742UA (en) | 2017-01-27 |
WO2015200715A1 (en) | 2015-12-30 |
KR20170023152A (ko) | 2017-03-02 |
MX2016013691A (es) | 2017-04-27 |
JP6722117B2 (ja) | 2020-07-15 |
BR112016025280A2 (pt) | 2017-12-12 |
PH12016502441B1 (en) | 2017-03-06 |
EP3161874B1 (en) | 2019-04-10 |
TW201618314A (zh) | 2016-05-16 |
CL2016003286A1 (es) | 2017-11-10 |
PH12016502441A1 (en) | 2017-03-06 |
ZA201608608B (en) | 2018-11-28 |
KR102449540B1 (ko) | 2022-10-04 |
EP3161874A1 (en) | 2017-05-03 |
AU2015279725B2 (en) | 2020-10-15 |
CN106471625A (zh) | 2017-03-01 |
MY183477A (en) | 2021-02-19 |
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