BR112016025280A2 - passivação de superfícies de recepção de luz de células solares com silício cristalino - Google Patents
passivação de superfícies de recepção de luz de células solares com silício cristalinoInfo
- Publication number
- BR112016025280A2 BR112016025280A2 BR112016025280A BR112016025280A BR112016025280A2 BR 112016025280 A2 BR112016025280 A2 BR 112016025280A2 BR 112016025280 A BR112016025280 A BR 112016025280A BR 112016025280 A BR112016025280 A BR 112016025280A BR 112016025280 A2 BR112016025280 A2 BR 112016025280A2
- Authority
- BR
- Brazil
- Prior art keywords
- light receiving
- receiving surface
- solar cell
- silicon layer
- crystalline silicon
- Prior art date
Links
- 238000002161 passivation Methods 0.000 title abstract 3
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 9
- 229910052710 silicon Inorganic materials 0.000 abstract 9
- 239000010703 silicon Substances 0.000 abstract 9
- 239000000758 substrate Substances 0.000 abstract 4
- 229910021424 microcrystalline silicon Inorganic materials 0.000 abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 1
Classifications
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- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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- H01L31/02—Details
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- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
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- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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- H01L31/182—Special manufacturing methods for polycrystalline Si, e.g. Si ribbon, poly Si ingots, thin films of polycrystalline Si
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- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
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Abstract
a presente invenção refere-se a métodos de passivação de superfícies de recepção de luz de células solares com silício cristalino, e das células solares assim obtidas. em um exemplo, uma célula solar inclui um substrato de silício que tem uma superfície de recepção de luz. uma camada de silício intrínseco é disposta acima da superfície de recepção de luz do substrato de silício. uma camada de silício de dopagem tipo n é disposta sobre a camada de silício intrínseco. uma ou ambas dentre a camada de silício intrínseco e a camada de silício de dopagem tipo n é uma camada de silício microcristalino ou policristalino. em um outro exemplo, uma célula solar inclui um substrato de silício que tem uma superfície de recepção de luz. uma camada dielétrica de passivação é disposta sobre a superfície de recepção de luz do substrato de silício. uma camada de silício microcristalino ou policristalino de dopagem tipo n é disposta sobre a camada dielétrica de passivação.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US14/317,672 US20150380581A1 (en) | 2014-06-27 | 2014-06-27 | Passivation of light-receiving surfaces of solar cells with crystalline silicon |
PCT/US2015/037819 WO2015200715A1 (en) | 2014-06-27 | 2015-06-25 | Passivation of light-receiving surfaces of solar cells with crystalline silicon |
Publications (1)
Publication Number | Publication Date |
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BR112016025280A2 true BR112016025280A2 (pt) | 2017-12-12 |
Family
ID=54931432
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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BR112016025280A BR112016025280A2 (pt) | 2014-06-27 | 2015-06-25 | passivação de superfícies de recepção de luz de células solares com silício cristalino |
Country Status (15)
Country | Link |
---|---|
US (1) | US20150380581A1 (pt) |
EP (1) | EP3161874B1 (pt) |
JP (1) | JP6722117B2 (pt) |
KR (1) | KR102449540B1 (pt) |
CN (2) | CN106471625A (pt) |
AU (1) | AU2015279725B2 (pt) |
BR (1) | BR112016025280A2 (pt) |
CL (1) | CL2016003286A1 (pt) |
MX (1) | MX2016013691A (pt) |
MY (1) | MY183477A (pt) |
PH (1) | PH12016502441B1 (pt) |
SG (1) | SG11201610742UA (pt) |
TW (1) | TWI685117B (pt) |
WO (1) | WO2015200715A1 (pt) |
ZA (1) | ZA201608608B (pt) |
Families Citing this family (10)
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CN109844962A (zh) * | 2016-09-27 | 2019-06-04 | 松下知识产权经营株式会社 | 太阳能单电池和太阳能单电池的制造方法 |
US20180138328A1 (en) * | 2016-11-11 | 2018-05-17 | Sunpower Corporation | Uv-curing of light-receiving surfaces of solar cells |
DE112017006152T5 (de) * | 2016-12-06 | 2019-08-22 | The Australian National University | Solarzellenherstellung |
US20180337292A1 (en) * | 2017-05-19 | 2018-11-22 | Lg Electronics Inc. | Solar cell and method for manufacturing the same |
KR102514785B1 (ko) * | 2017-05-19 | 2023-03-29 | 상라오 징코 솔라 테크놀러지 디벨롭먼트 컴퍼니, 리미티드 | 태양 전지 및 이의 제조 방법 |
CN107658348A (zh) * | 2017-09-20 | 2018-02-02 | 贵州大学 | 硅基微纳光伏结构及其光子制备方法 |
EP3782206A4 (en) * | 2018-04-16 | 2021-05-19 | Sunpower Corporation | SOLAR CELLS WITH JUNCTIONS RETRACTED FROM DIVIDED EDGES |
DE102020001980A1 (de) * | 2020-03-26 | 2021-09-30 | Singulus Technologies Ag | Verfahren und Anlage zur Herstellung eines Ausgangsmaterials für eine Siliziumsolarzelle mit passivierten Kontakten |
CN114078987A (zh) * | 2020-08-18 | 2022-02-22 | 泰州中来光电科技有限公司 | 钝化接触电池及制备方法和钝化接触结构制备方法及装置 |
CN114914328B (zh) * | 2022-05-11 | 2023-09-05 | 通威太阳能(眉山)有限公司 | 一种双面太阳能电池及其制备方法 |
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CN202134565U (zh) * | 2011-06-21 | 2012-02-01 | 中国科学院上海技术物理研究所 | 一种带有本征层的异质结结构的晶体硅太阳电池 |
JP5773194B2 (ja) * | 2011-07-11 | 2015-09-02 | 国立大学法人東京農工大学 | 太陽電池の製造方法 |
US8692111B2 (en) * | 2011-08-23 | 2014-04-08 | Sunpower Corporation | High throughput laser ablation processes and structures for forming contact holes in solar cells |
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CN102569478A (zh) * | 2012-02-23 | 2012-07-11 | 常州天合光能有限公司 | 薄膜非晶硅-n型晶体硅异质结叠层太阳能电池 |
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CN104137269B (zh) * | 2012-05-14 | 2016-12-28 | 三菱电机株式会社 | 光电变换装置及其制造方法、光电变换模块 |
JP6103867B2 (ja) * | 2012-09-12 | 2017-03-29 | シャープ株式会社 | 光電変換素子および光電変換素子の製造方法 |
JP2014216334A (ja) * | 2013-04-22 | 2014-11-17 | 長州産業株式会社 | 光発電素子 |
CN103346211B (zh) * | 2013-06-26 | 2015-12-23 | 英利集团有限公司 | 一种背接触太阳能电池及其制作方法 |
-
2014
- 2014-06-27 US US14/317,672 patent/US20150380581A1/en not_active Abandoned
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2015
- 2015-06-25 WO PCT/US2015/037819 patent/WO2015200715A1/en active Application Filing
- 2015-06-25 MY MYPI2016001961A patent/MY183477A/en unknown
- 2015-06-25 BR BR112016025280A patent/BR112016025280A2/pt not_active Application Discontinuation
- 2015-06-25 AU AU2015279725A patent/AU2015279725B2/en active Active
- 2015-06-25 KR KR1020177002215A patent/KR102449540B1/ko active IP Right Grant
- 2015-06-25 CN CN201580035076.0A patent/CN106471625A/zh active Pending
- 2015-06-25 SG SG11201610742UA patent/SG11201610742UA/en unknown
- 2015-06-25 EP EP15812793.6A patent/EP3161874B1/en active Active
- 2015-06-25 MX MX2016013691A patent/MX2016013691A/es active IP Right Grant
- 2015-06-25 JP JP2016569968A patent/JP6722117B2/ja active Active
- 2015-06-25 CN CN202110740253.2A patent/CN113571590A/zh active Pending
- 2015-06-29 TW TW104120962A patent/TWI685117B/zh active
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2016
- 2016-12-06 PH PH12016502441A patent/PH12016502441B1/en unknown
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Also Published As
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US20150380581A1 (en) | 2015-12-31 |
TWI685117B (zh) | 2020-02-11 |
EP3161874B1 (en) | 2019-04-10 |
AU2015279725A1 (en) | 2016-09-29 |
PH12016502441A1 (en) | 2017-03-06 |
EP3161874A4 (en) | 2017-05-24 |
AU2015279725B2 (en) | 2020-10-15 |
PH12016502441B1 (en) | 2017-03-06 |
KR102449540B1 (ko) | 2022-10-04 |
SG11201610742UA (en) | 2017-01-27 |
MX2016013691A (es) | 2017-04-27 |
CL2016003286A1 (es) | 2017-11-10 |
WO2015200715A1 (en) | 2015-12-30 |
JP2017525136A (ja) | 2017-08-31 |
TW201618314A (zh) | 2016-05-16 |
CN106471625A (zh) | 2017-03-01 |
EP3161874A1 (en) | 2017-05-03 |
ZA201608608B (en) | 2018-11-28 |
CN113571590A (zh) | 2021-10-29 |
JP6722117B2 (ja) | 2020-07-15 |
KR20170023152A (ko) | 2017-03-02 |
MY183477A (en) | 2021-02-19 |
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