BR112016025280A2 - passivação de superfícies de recepção de luz de células solares com silício cristalino - Google Patents

passivação de superfícies de recepção de luz de células solares com silício cristalino

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Publication number
BR112016025280A2
BR112016025280A2 BR112016025280A BR112016025280A BR112016025280A2 BR 112016025280 A2 BR112016025280 A2 BR 112016025280A2 BR 112016025280 A BR112016025280 A BR 112016025280A BR 112016025280 A BR112016025280 A BR 112016025280A BR 112016025280 A2 BR112016025280 A2 BR 112016025280A2
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Brazil
Prior art keywords
light receiving
receiving surface
solar cell
silicon layer
crystalline silicon
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BR112016025280A
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English (en)
Inventor
d smith David
mark tracy Kieran
c johnson Michael
Carmi TOMADA Princess
JAFFRENNOU Périne
Bum Rim Seung
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Sunpower Corp
Total Marketing Services
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Application filed by Sunpower Corp, Total Marketing Services filed Critical Sunpower Corp
Publication of BR112016025280A2 publication Critical patent/BR112016025280A2/pt

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    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
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    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
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    • H01L31/0682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells back-junction, i.e. rearside emitter, solar cells, e.g. interdigitated base-emitter regions back-junction cells
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  • Engineering & Computer Science (AREA)
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Abstract

a presente invenção refere-se a métodos de passivação de superfícies de recepção de luz de células solares com silício cristalino, e das células solares assim obtidas. em um exemplo, uma célula solar inclui um substrato de silício que tem uma superfície de recepção de luz. uma camada de silício intrínseco é disposta acima da superfície de recepção de luz do substrato de silício. uma camada de silício de dopagem tipo n é disposta sobre a camada de silício intrínseco. uma ou ambas dentre a camada de silício intrínseco e a camada de silício de dopagem tipo n é uma camada de silício microcristalino ou policristalino. em um outro exemplo, uma célula solar inclui um substrato de silício que tem uma superfície de recepção de luz. uma camada dielétrica de passivação é disposta sobre a superfície de recepção de luz do substrato de silício. uma camada de silício microcristalino ou policristalino de dopagem tipo n é disposta sobre a camada dielétrica de passivação.
BR112016025280A 2014-06-27 2015-06-25 passivação de superfícies de recepção de luz de células solares com silício cristalino BR112016025280A2 (pt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US14/317,672 US20150380581A1 (en) 2014-06-27 2014-06-27 Passivation of light-receiving surfaces of solar cells with crystalline silicon
PCT/US2015/037819 WO2015200715A1 (en) 2014-06-27 2015-06-25 Passivation of light-receiving surfaces of solar cells with crystalline silicon

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BR112016025280A2 true BR112016025280A2 (pt) 2017-12-12

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US (1) US20150380581A1 (pt)
EP (1) EP3161874B1 (pt)
JP (1) JP6722117B2 (pt)
KR (1) KR102449540B1 (pt)
CN (2) CN113571590A (pt)
AU (1) AU2015279725B2 (pt)
BR (1) BR112016025280A2 (pt)
CL (1) CL2016003286A1 (pt)
MX (1) MX2016013691A (pt)
MY (1) MY183477A (pt)
PH (1) PH12016502441B1 (pt)
SG (1) SG11201610742UA (pt)
TW (1) TWI685117B (pt)
WO (1) WO2015200715A1 (pt)
ZA (1) ZA201608608B (pt)

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EP3161874A1 (en) 2017-05-03
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JP6722117B2 (ja) 2020-07-15
MY183477A (en) 2021-02-19
AU2015279725B2 (en) 2020-10-15
MX2016013691A (es) 2017-04-27
US20150380581A1 (en) 2015-12-31
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CL2016003286A1 (es) 2017-11-10
EP3161874A4 (en) 2017-05-24
PH12016502441B1 (en) 2017-03-06
SG11201610742UA (en) 2017-01-27
WO2015200715A1 (en) 2015-12-30
JP2017525136A (ja) 2017-08-31
CN113571590A (zh) 2021-10-29
EP3161874B1 (en) 2019-04-10
CN106471625A (zh) 2017-03-01

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