LT3688819T - Saulės elementai su skaidrais kontaktais, polisilicio oksido pagrindu - Google Patents

Saulės elementai su skaidrais kontaktais, polisilicio oksido pagrindu

Info

Publication number
LT3688819T
LT3688819T LTEPPCT/NL2018/050631T LTNL2018050631T LT3688819T LT 3688819 T LT3688819 T LT 3688819T LT NL2018050631 T LTNL2018050631 T LT NL2018050631T LT 3688819 T LT3688819 T LT 3688819T
Authority
LT
Lithuania
Prior art keywords
poly
silicon
oxide
solar cells
contacts based
Prior art date
Application number
LTEPPCT/NL2018/050631T
Other languages
English (en)
Inventor
Olindo ISABELLA
Paul Alejandro PROCEL MOYA
Miroslav Zeman
Guangtao YANG
Original Assignee
Technische Universiteit Delft
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Technische Universiteit Delft filed Critical Technische Universiteit Delft
Publication of LT3688819T publication Critical patent/LT3688819T/lt

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
    • H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0236—Special surface textures
    • H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)
LTEPPCT/NL2018/050631T 2017-09-27 2018-09-24 Saulės elementai su skaidrais kontaktais, polisilicio oksido pagrindu LT3688819T (lt)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
NL2019634A NL2019634B1 (en) 2017-09-27 2017-09-27 Solar cells with transparent contacts based on poly-silicon-oxide
PCT/NL2018/050631 WO2019066648A1 (en) 2017-09-27 2018-09-24 SOLAR CELLS WITH TRANSPARENT CONTACTS BASED ON POLYSILICON OXIDE

Publications (1)

Publication Number Publication Date
LT3688819T true LT3688819T (lt) 2022-03-10

Family

ID=60138899

Family Applications (1)

Application Number Title Priority Date Filing Date
LTEPPCT/NL2018/050631T LT3688819T (lt) 2017-09-27 2018-09-24 Saulės elementai su skaidrais kontaktais, polisilicio oksido pagrindu

Country Status (4)

Country Link
EP (1) EP3688819B1 (lt)
LT (1) LT3688819T (lt)
NL (1) NL2019634B1 (lt)
WO (1) WO2019066648A1 (lt)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL2024024B1 (en) 2019-10-16 2021-06-17 Univ Delft Tech Transparent passivated contacts for Si solar cells
CN111540794B (zh) * 2020-05-14 2022-07-12 浙江正泰太阳能科技有限公司 一种p型钝化接触太阳能电池及其制作方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5734512B2 (ja) 2012-05-14 2015-06-17 三菱電機株式会社 光電変換装置およびその製造方法、光電変換モジュール
WO2013180653A1 (en) * 2012-05-29 2013-12-05 National University Of Singapore Hybrid solar cell and method of fabricating thereof
US9312406B2 (en) 2012-12-19 2016-04-12 Sunpower Corporation Hybrid emitter all back contact solar cell
KR101613843B1 (ko) 2013-04-23 2016-04-20 엘지전자 주식회사 태양 전지 및 이의 제조 방법
NL2013722B1 (en) * 2014-10-31 2016-10-04 Univ Delft Tech Back side contacted wafer-based solar cells with in-situ doped crystallized thin-film silicon and/or silicon oxide regions.

Also Published As

Publication number Publication date
WO2019066648A1 (en) 2019-04-04
NL2019634B1 (en) 2019-04-03
EP3688819A1 (en) 2020-08-05
WO2019066648A8 (en) 2019-07-11
EP3688819B1 (en) 2021-12-29

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