WO2016019396A3 - Solar cell surface passivation using photo-anneal - Google Patents

Solar cell surface passivation using photo-anneal Download PDF

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Publication number
WO2016019396A3
WO2016019396A3 PCT/US2015/043507 US2015043507W WO2016019396A3 WO 2016019396 A3 WO2016019396 A3 WO 2016019396A3 US 2015043507 W US2015043507 W US 2015043507W WO 2016019396 A3 WO2016019396 A3 WO 2016019396A3
Authority
WO
WIPO (PCT)
Prior art keywords
oxide layer
silicon
anneal
photo
solar cell
Prior art date
Application number
PCT/US2015/043507
Other languages
French (fr)
Other versions
WO2016019396A2 (en
Inventor
Anand Deshpande
Megan TSAI
Sean S. SEUTTER
Pawan Kapur
Mehrdad M. Moslehi
Original Assignee
Solexel, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Solexel, Inc. filed Critical Solexel, Inc.
Publication of WO2016019396A2 publication Critical patent/WO2016019396A2/en
Publication of WO2016019396A3 publication Critical patent/WO2016019396A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

A surface of a silicon substrate is passivated. A silicon oxide layer is formed on a first surface of a silicon substrate. An aluminum oxide layer is formed on the silicon oxide layer. A hydrogenated amorphous silicon nitride layer is formed on the aluminum oxide layer. A high intensity light source illuminates the silicon surface, the silicon oxide layer, the aluminum oxide layer, and the hydrogenated amorphous silicon nitride layer.
PCT/US2015/043507 2014-08-01 2015-08-03 Solar cell surface passivation using photo-anneal WO2016019396A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201462032414P 2014-08-01 2014-08-01
US62/032,414 2014-08-01

Publications (2)

Publication Number Publication Date
WO2016019396A2 WO2016019396A2 (en) 2016-02-04
WO2016019396A3 true WO2016019396A3 (en) 2016-04-14

Family

ID=55218455

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2015/043507 WO2016019396A2 (en) 2014-08-01 2015-08-03 Solar cell surface passivation using photo-anneal

Country Status (1)

Country Link
WO (1) WO2016019396A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20180138354A1 (en) * 2016-11-11 2018-05-17 Sunpower Corporation Solar cell curing tool
CN109473508B (en) * 2018-12-25 2023-08-25 浙江晶科能源有限公司 Solar cell annealing method and device and solar cell preparation method
TWI701845B (en) * 2019-05-21 2020-08-11 長生太陽能股份有限公司 Solar cell structure and method for manufacturing oxide layer of solar cell
CN110137309A (en) * 2019-05-23 2019-08-16 通威太阳能（成都）有限公司 A method of promoting the anti-PID performance in the double-side cell back side
CN110246905A (en) * 2019-05-31 2019-09-17 苏州腾晖光伏技术有限公司 A kind of silicon solar cell and preparation method thereof
FR3099294B1 (en) * 2019-07-26 2021-07-30 Commissariat Energie Atomique PROCESS FOR TREATMENT OF A HETEROJUNCTION PHOTOVOLTAIC CELL PRECURSOR
CN110965044A (en) * 2019-09-09 2020-04-07 浙江爱旭太阳能科技有限公司 Dielectric passivation film for reducing electroattenuation of PERC (Positive-negative resistance) battery and preparation method thereof
CN110596917B (en) * 2019-09-18 2023-04-07 深圳先进技术研究院 Terahertz wave light-operated modulator and preparation method thereof
CN112909120B (en) * 2019-11-20 2022-07-29 苏州阿特斯阳光电力科技有限公司 Improve Al 2 O 3 Method for passivation effect of coating film
CN112768565B (en) * 2021-01-29 2022-10-04 泰州中来光电科技有限公司 Preparation method of passivation contact structure and crystalline silicon with passivation contact structure

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130130430A1 (en) * 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells
US20130133737A1 (en) * 2010-04-20 2013-05-30 Kyocera Corporation Solar cell elements and solar cell module using same
US20130160839A1 (en) * 2011-12-21 2013-06-27 Juhwa CHEONG Solar cell
US20130186464A1 (en) * 2012-01-03 2013-07-25 Shuran Sheng Buffer layer for improving the performance and stability of surface passivation of silicon solar cells
US20130247972A1 (en) * 2012-02-17 2013-09-26 Applied Materials, Inc. Passivation film stack for silicon-based solar cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130133737A1 (en) * 2010-04-20 2013-05-30 Kyocera Corporation Solar cell elements and solar cell module using same
US20130130430A1 (en) * 2011-05-20 2013-05-23 Solexel, Inc. Spatially selective laser annealing applications in high-efficiency solar cells
US20130160839A1 (en) * 2011-12-21 2013-06-27 Juhwa CHEONG Solar cell
US20130186464A1 (en) * 2012-01-03 2013-07-25 Shuran Sheng Buffer layer for improving the performance and stability of surface passivation of silicon solar cells
US20130247972A1 (en) * 2012-02-17 2013-09-26 Applied Materials, Inc. Passivation film stack for silicon-based solar cells

Also Published As

Publication number Publication date
WO2016019396A2 (en) 2016-02-04

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