FR2650916B1 - Dispositif photovoltaique - Google Patents

Dispositif photovoltaique

Info

Publication number
FR2650916B1
FR2650916B1 FR909010210A FR9010210A FR2650916B1 FR 2650916 B1 FR2650916 B1 FR 2650916B1 FR 909010210 A FR909010210 A FR 909010210A FR 9010210 A FR9010210 A FR 9010210A FR 2650916 B1 FR2650916 B1 FR 2650916B1
Authority
FR
France
Prior art keywords
photovoltaic device
photovoltaic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
FR909010210A
Other languages
English (en)
Other versions
FR2650916A1 (fr
Inventor
Masayuki Iwamoto
Kouji Minami
Toshihiko Yamaoki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd filed Critical Sanyo Electric Co Ltd
Publication of FR2650916A1 publication Critical patent/FR2650916A1/fr
Application granted granted Critical
Publication of FR2650916B1 publication Critical patent/FR2650916B1/fr
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/036—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes
    • H01L31/0368—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors
    • H01L31/03682—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System
    • H01L31/03685—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their crystalline structure or particular orientation of the crystalline planes including polycrystalline semiconductors including only elements of Group IV of the Periodic System including microcrystalline silicon, uc-Si
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
    • H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
    • H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic System
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
FR909010210A 1989-08-09 1990-08-09 Dispositif photovoltaique Expired - Lifetime FR2650916B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1206143A JP2740284B2 (ja) 1989-08-09 1989-08-09 光起電力素子

Publications (2)

Publication Number Publication Date
FR2650916A1 FR2650916A1 (fr) 1991-02-15
FR2650916B1 true FR2650916B1 (fr) 1993-03-05

Family

ID=16518505

Family Applications (1)

Application Number Title Priority Date Filing Date
FR909010210A Expired - Lifetime FR2650916B1 (fr) 1989-08-09 1990-08-09 Dispositif photovoltaique

Country Status (4)

Country Link
US (1) US5066340A (fr)
JP (1) JP2740284B2 (fr)
DE (1) DE4025311A1 (fr)
FR (1) FR2650916B1 (fr)

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US5213628A (en) * 1990-09-20 1993-05-25 Sanyo Electric Co., Ltd. Photovoltaic device
JPH04275467A (ja) * 1991-03-04 1992-10-01 Sanyo Electric Co Ltd フォトトランジスタ
US5705828A (en) * 1991-08-10 1998-01-06 Sanyo Electric Co., Ltd. Photovoltaic device
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US5419783A (en) * 1992-03-26 1995-05-30 Sanyo Electric Co., Ltd. Photovoltaic device and manufacturing method therefor
US5584941A (en) * 1994-03-22 1996-12-17 Canon Kabushiki Kaisha Solar cell and production process therefor
DE19524459A1 (de) * 1995-07-07 1997-01-09 Forschungszentrum Juelich Gmbh Solarzelle, insbesondere Konzentrator-Solarzelle oder Eine-Sonne-Solarzelle auf Siliziumbasis mit deponierten amorphen Silizium, Silizium-Germanium und/oder anderen Siliziumlegierungs-Schichten
CN1139997C (zh) 1997-03-21 2004-02-25 三洋电机株式会社 光电器件及其制造方法
JP2001189478A (ja) * 1999-12-28 2001-07-10 Sanyo Electric Co Ltd 半導体素子及びその製造方法
JP3490964B2 (ja) * 2000-09-05 2004-01-26 三洋電機株式会社 光起電力装置
JP2002134772A (ja) * 2000-10-24 2002-05-10 Canon Inc シリコン系薄膜及び光起電力素子
EP1398837A1 (fr) * 2002-09-09 2004-03-17 Interuniversitair Microelektronica Centrum ( Imec) Dispositif photovoltaique
JP2004296598A (ja) * 2003-03-26 2004-10-21 Canon Inc 太陽電池
FR2880986B1 (fr) * 2005-01-20 2007-03-02 Commissariat Energie Atomique Procede de metallisation d'un dispositif semi-conducteur
FR2880989B1 (fr) * 2005-01-20 2007-03-09 Commissariat Energie Atomique Dispositif semi-conducteur a heterojonctions et a structure inter-digitee
US7554031B2 (en) * 2005-03-03 2009-06-30 Sunpower Corporation Preventing harmful polarization of solar cells
WO2006122774A1 (fr) * 2005-05-17 2006-11-23 Interuniversitair Microelektronica Centrum Vzw Procede permettant de produire des cellules photovoltaiques
DE202005019799U1 (de) * 2005-12-13 2006-03-02 Hahn-Meitner-Institut Berlin Gmbh Amorph/kristalline Silizium-Heterosolarzelle
US20070169808A1 (en) * 2006-01-26 2007-07-26 Kherani Nazir P Solar cell
DE102006042617B4 (de) * 2006-09-05 2010-04-08 Q-Cells Se Verfahren zur Erzeugung von lokalen Kontakten
US7501305B2 (en) 2006-10-23 2009-03-10 Canon Kabushiki Kaisha Method for forming deposited film and photovoltaic element
US9577137B2 (en) * 2007-01-25 2017-02-21 Au Optronics Corporation Photovoltaic cells with multi-band gap and applications in a low temperature polycrystalline silicon thin film transistor panel
US20080179762A1 (en) * 2007-01-25 2008-07-31 Au Optronics Corporation Layered structure with laser-induced aggregation silicon nano-dots in a silicon-rich dielectric layer, and applications of the same
JP5142565B2 (ja) * 2007-03-20 2013-02-13 三洋電機株式会社 太陽電池の製造方法
ES2422256T3 (es) * 2007-11-09 2013-09-10 Sunpreme Inc Celdas solares de bajo coste y métodos para su producción
WO2009120631A2 (fr) * 2008-03-25 2009-10-01 Applied Materials, Inc. Procédé de nettoyage et de texturation de surface pour cellules solaires cristallines
US8450140B2 (en) * 2008-06-18 2013-05-28 Tel Solar Ag Method for large-scale manufacturing of photovoltaic cells for a converter panel and photovoltaic converter panel
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TWI462307B (zh) * 2008-09-02 2014-11-21 Au Optronics Corp 具備多重能隙的矽奈米晶體光電池及其在一低溫多晶矽薄膜電晶體面板內之應用
US8796066B2 (en) * 2008-11-07 2014-08-05 Sunpreme, Inc. Low-cost solar cells and methods for fabricating low cost substrates for solar cells
US7951640B2 (en) * 2008-11-07 2011-05-31 Sunpreme, Ltd. Low-cost multi-junction solar cells and methods for their production
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TWI436490B (zh) * 2010-09-03 2014-05-01 Univ Tatung 光伏電池結構
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US9812590B2 (en) 2012-10-25 2017-11-07 Sunpower Corporation Bifacial solar cell module with backside reflector
US9035172B2 (en) 2012-11-26 2015-05-19 Sunpower Corporation Crack resistant solar cell modules
US8796061B2 (en) 2012-12-21 2014-08-05 Sunpower Corporation Module assembly for thin solar cells
US9685571B2 (en) 2013-08-14 2017-06-20 Sunpower Corporation Solar cell module with high electric susceptibility layer
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Also Published As

Publication number Publication date
DE4025311C2 (fr) 1992-09-24
DE4025311A1 (de) 1991-02-14
JPH0370183A (ja) 1991-03-26
JP2740284B2 (ja) 1998-04-15
FR2650916A1 (fr) 1991-02-15
US5066340A (en) 1991-11-19

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