JPH0424878B2 - - Google Patents

Info

Publication number
JPH0424878B2
JPH0424878B2 JP58151405A JP15140583A JPH0424878B2 JP H0424878 B2 JPH0424878 B2 JP H0424878B2 JP 58151405 A JP58151405 A JP 58151405A JP 15140583 A JP15140583 A JP 15140583A JP H0424878 B2 JPH0424878 B2 JP H0424878B2
Authority
JP
Japan
Prior art keywords
semiconductor
type
silicon
type semiconductor
semiconductor layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58151405A
Other languages
English (en)
Japanese (ja)
Other versions
JPS6043869A (ja
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP58151405A priority Critical patent/JPS6043869A/ja
Publication of JPS6043869A publication Critical patent/JPS6043869A/ja
Priority to JP1274697A priority patent/JPH0669096B2/ja
Publication of JPH0424878B2 publication Critical patent/JPH0424878B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6713—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device characterised by the properties of the source or drain regions, e.g. compositions or sectional shapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon

Landscapes

  • Photovoltaic Devices (AREA)
JP58151405A 1983-08-19 1983-08-19 半導体装置 Granted JPS6043869A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP58151405A JPS6043869A (ja) 1983-08-19 1983-08-19 半導体装置
JP1274697A JPH0669096B2 (ja) 1983-08-19 1989-10-20 絶縁ゲート型電界効果トランジスタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58151405A JPS6043869A (ja) 1983-08-19 1983-08-19 半導体装置

Related Child Applications (3)

Application Number Title Priority Date Filing Date
JP1274696A Division JPH0340470A (ja) 1989-10-20 1989-10-20 絶縁ゲイト型電界効果トランジスタ
JP1274697A Division JPH0669096B2 (ja) 1983-08-19 1989-10-20 絶縁ゲート型電界効果トランジスタ
JP3352883A Division JPH05267700A (ja) 1991-12-17 1991-12-17 半導体装置

Publications (2)

Publication Number Publication Date
JPS6043869A JPS6043869A (ja) 1985-03-08
JPH0424878B2 true JPH0424878B2 (enrdf_load_stackoverflow) 1992-04-28

Family

ID=15517867

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58151405A Granted JPS6043869A (ja) 1983-08-19 1983-08-19 半導体装置

Country Status (1)

Country Link
JP (1) JPS6043869A (enrdf_load_stackoverflow)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63245964A (ja) * 1987-03-31 1988-10-13 Kanegafuchi Chem Ind Co Ltd 集積型太陽電池
EP0445535B1 (en) 1990-02-06 1995-02-01 Sel Semiconductor Energy Laboratory Co., Ltd. Method of forming an oxide film
JPH03278466A (ja) * 1990-03-27 1991-12-10 Toshiba Corp 薄膜トランジスタおよびその製造方法
EP0459763B1 (en) 1990-05-29 1997-05-02 Semiconductor Energy Laboratory Co., Ltd. Thin-film transistors
US5172485A (en) * 1991-10-17 1992-12-22 Mitutoyo Corporation Precision linear measuring suspension system having sliding contact between the scale and the pick-off
JPH05267700A (ja) * 1991-12-17 1993-10-15 Semiconductor Energy Lab Co Ltd 半導体装置
KR100291971B1 (ko) 1993-10-26 2001-10-24 야마자끼 순페이 기판처리장치및방법과박막반도체디바이스제조방법

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3032158A1 (de) * 1979-08-30 1981-04-02 Plessey Overseas Ltd., Ilford, Essex Solarzelle

Also Published As

Publication number Publication date
JPS6043869A (ja) 1985-03-08

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