JPH0526354B2 - - Google Patents

Info

Publication number
JPH0526354B2
JPH0526354B2 JP58049318A JP4931883A JPH0526354B2 JP H0526354 B2 JPH0526354 B2 JP H0526354B2 JP 58049318 A JP58049318 A JP 58049318A JP 4931883 A JP4931883 A JP 4931883A JP H0526354 B2 JPH0526354 B2 JP H0526354B2
Authority
JP
Japan
Prior art keywords
amorphous
crystalline
semiconductor
cell
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
JP58049318A
Other languages
English (en)
Japanese (ja)
Other versions
JPS59175170A (ja
Inventor
Yoshihiro Hamakawa
Hiroaki Okamoto
Koji Okuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daihen Corp
Original Assignee
Daihen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daihen Corp filed Critical Daihen Corp
Priority to JP58049318A priority Critical patent/JPS59175170A/ja
Priority to US06/528,988 priority patent/US4496788A/en
Priority to EP83112159A priority patent/EP0113434B2/en
Priority to DE8383112159T priority patent/DE3379565D1/de
Publication of JPS59175170A publication Critical patent/JPS59175170A/ja
Publication of JPH0526354B2 publication Critical patent/JPH0526354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP58049318A 1982-12-29 1983-03-24 タンデム型太陽電池 Granted JPS59175170A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58049318A JPS59175170A (ja) 1983-03-24 1983-03-24 タンデム型太陽電池
US06/528,988 US4496788A (en) 1982-12-29 1983-09-02 Photovoltaic device
EP83112159A EP0113434B2 (en) 1982-12-29 1983-12-02 Photovoltaic device
DE8383112159T DE3379565D1 (en) 1982-12-29 1983-12-02 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58049318A JPS59175170A (ja) 1983-03-24 1983-03-24 タンデム型太陽電池

Publications (2)

Publication Number Publication Date
JPS59175170A JPS59175170A (ja) 1984-10-03
JPH0526354B2 true JPH0526354B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=12827612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58049318A Granted JPS59175170A (ja) 1982-12-29 1983-03-24 タンデム型太陽電池

Country Status (1)

Country Link
JP (1) JPS59175170A (enrdf_load_stackoverflow)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180952U (enrdf_load_stackoverflow) * 1987-05-13 1988-11-22
JP2738557B2 (ja) * 1989-03-10 1998-04-08 三菱電機株式会社 多層構造太陽電池
JPH0795603B2 (ja) * 1990-09-20 1995-10-11 三洋電機株式会社 光起電力装置
JPH05299677A (ja) * 1992-04-24 1993-11-12 Fuji Electric Co Ltd 太陽電池およびその製造方法
JP3271990B2 (ja) 1997-03-21 2002-04-08 三洋電機株式会社 光起電力素子及びその製造方法
JP2010534922A (ja) * 2007-04-09 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率の縦列太陽電池用の低抵抗トンネル接合
US7947523B2 (en) 2008-04-25 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US7951656B2 (en) 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
WO2013186945A1 (ja) 2012-06-13 2013-12-19 三菱電機株式会社 太陽電池およびその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633888A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Solar battery
JPS5713185A (en) * 1980-06-26 1982-01-23 Asahi Chem Ind Co Ltd Photoelectrolysis device
JPS5760875A (en) * 1980-09-25 1982-04-13 Sharp Corp Photoelectric conversion element
JPS57124482A (en) * 1981-01-27 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Solar cell

Also Published As

Publication number Publication date
JPS59175170A (ja) 1984-10-03

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