JPS59175170A - タンデム型太陽電池 - Google Patents

タンデム型太陽電池

Info

Publication number
JPS59175170A
JPS59175170A JP58049318A JP4931883A JPS59175170A JP S59175170 A JPS59175170 A JP S59175170A JP 58049318 A JP58049318 A JP 58049318A JP 4931883 A JP4931883 A JP 4931883A JP S59175170 A JPS59175170 A JP S59175170A
Authority
JP
Japan
Prior art keywords
semiconductor
amorphous
crystalline
solar cell
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58049318A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0526354B2 (enrdf_load_stackoverflow
Inventor
Yoshihiro Hamakawa
濱川　圭弘
Hiroaki Okamoto
博明 岡本
Koji Okuda
浩司 奥田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Daihen Corp
Original Assignee
Daihen Corp
Osaka Transformer Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daihen Corp, Osaka Transformer Co Ltd filed Critical Daihen Corp
Priority to JP58049318A priority Critical patent/JPS59175170A/ja
Priority to US06/528,988 priority patent/US4496788A/en
Priority to EP83112159A priority patent/EP0113434B2/en
Priority to DE8383112159T priority patent/DE3379565D1/de
Publication of JPS59175170A publication Critical patent/JPS59175170A/ja
Publication of JPH0526354B2 publication Critical patent/JPH0526354B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/19—Photovoltaic cells having multiple potential barriers of different types, e.g. tandem cells having both PN and PIN junctions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/545—Microcrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells

Landscapes

  • Photovoltaic Devices (AREA)
JP58049318A 1982-12-29 1983-03-24 タンデム型太陽電池 Granted JPS59175170A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP58049318A JPS59175170A (ja) 1983-03-24 1983-03-24 タンデム型太陽電池
US06/528,988 US4496788A (en) 1982-12-29 1983-09-02 Photovoltaic device
EP83112159A EP0113434B2 (en) 1982-12-29 1983-12-02 Photovoltaic device
DE8383112159T DE3379565D1 (en) 1982-12-29 1983-12-02 Photovoltaic device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58049318A JPS59175170A (ja) 1983-03-24 1983-03-24 タンデム型太陽電池

Publications (2)

Publication Number Publication Date
JPS59175170A true JPS59175170A (ja) 1984-10-03
JPH0526354B2 JPH0526354B2 (enrdf_load_stackoverflow) 1993-04-15

Family

ID=12827612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58049318A Granted JPS59175170A (ja) 1982-12-29 1983-03-24 タンデム型太陽電池

Country Status (1)

Country Link
JP (1) JPS59175170A (enrdf_load_stackoverflow)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180952U (enrdf_load_stackoverflow) * 1987-05-13 1988-11-22
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04130671A (ja) * 1990-09-20 1992-05-01 Sanyo Electric Co Ltd 光起電力装置
US5456764A (en) * 1992-04-24 1995-10-10 Fuji Electric Co., Ltd. Solar cell and a method for the manufacture thereof
WO1998043304A1 (en) * 1997-03-21 1998-10-01 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JP2010534922A (ja) * 2007-04-09 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率の縦列太陽電池用の低抵抗トンネル接合
US7947523B2 (en) 2008-04-25 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US7951656B2 (en) 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9871152B2 (en) 2012-06-13 2018-01-16 Mitsubishi Electric Corporation Solar cell and manufacturing method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633888A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Solar battery
JPS5713185A (en) * 1980-06-26 1982-01-23 Asahi Chem Ind Co Ltd Photoelectrolysis device
JPS5760875A (en) * 1980-09-25 1982-04-13 Sharp Corp Photoelectric conversion element
JPS57124482A (en) * 1981-01-27 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Solar cell

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5633888A (en) * 1979-08-29 1981-04-04 Seiko Epson Corp Solar battery
JPS5713185A (en) * 1980-06-26 1982-01-23 Asahi Chem Ind Co Ltd Photoelectrolysis device
JPS5760875A (en) * 1980-09-25 1982-04-13 Sharp Corp Photoelectric conversion element
JPS57124482A (en) * 1981-01-27 1982-08-03 Nippon Telegr & Teleph Corp <Ntt> Solar cell

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63180952U (enrdf_load_stackoverflow) * 1987-05-13 1988-11-22
JPH02237172A (ja) * 1989-03-10 1990-09-19 Mitsubishi Electric Corp 多層構造太陽電池
JPH04130671A (ja) * 1990-09-20 1992-05-01 Sanyo Electric Co Ltd 光起電力装置
US5456764A (en) * 1992-04-24 1995-10-10 Fuji Electric Co., Ltd. Solar cell and a method for the manufacture thereof
WO1998043304A1 (en) * 1997-03-21 1998-10-01 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
US6207890B1 (en) 1997-03-21 2001-03-27 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
US6380479B2 (en) 1997-03-21 2002-04-30 Sanyo Electric Co., Ltd. Photovoltaic element and method for manufacture thereof
JP2010534922A (ja) * 2007-04-09 2010-11-11 ザ リージェンツ オブ ザ ユニバーシティ オブ カリフォルニア 高効率の縦列太陽電池用の低抵抗トンネル接合
US7947523B2 (en) 2008-04-25 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing photoelectric conversion device
US7951656B2 (en) 2008-06-06 2011-05-31 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US8173496B2 (en) 2008-06-06 2012-05-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US9871152B2 (en) 2012-06-13 2018-01-16 Mitsubishi Electric Corporation Solar cell and manufacturing method thereof

Also Published As

Publication number Publication date
JPH0526354B2 (enrdf_load_stackoverflow) 1993-04-15

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