JPS5365088A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5365088A
JPS5365088A JP14085476A JP14085476A JPS5365088A JP S5365088 A JPS5365088 A JP S5365088A JP 14085476 A JP14085476 A JP 14085476A JP 14085476 A JP14085476 A JP 14085476A JP S5365088 A JPS5365088 A JP S5365088A
Authority
JP
Japan
Prior art keywords
film
semiconductor device
layer
wiring paths
layer wiring
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14085476A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5742220B2 (enExample
Inventor
Masaharu Yorikane
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP14085476A priority Critical patent/JPS5365088A/ja
Publication of JPS5365088A publication Critical patent/JPS5365088A/ja
Publication of JPS5742220B2 publication Critical patent/JPS5742220B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP14085476A 1976-11-22 1976-11-22 Semiconductor device Granted JPS5365088A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14085476A JPS5365088A (en) 1976-11-22 1976-11-22 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14085476A JPS5365088A (en) 1976-11-22 1976-11-22 Semiconductor device

Publications (2)

Publication Number Publication Date
JPS5365088A true JPS5365088A (en) 1978-06-10
JPS5742220B2 JPS5742220B2 (enExample) 1982-09-07

Family

ID=15278274

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14085476A Granted JPS5365088A (en) 1976-11-22 1976-11-22 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5365088A (enExample)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524454A (en) * 1978-08-08 1980-02-21 Nec Corp Insulating gate type field effect transistor
JPS5530876A (en) * 1978-08-28 1980-03-04 Fuji Electric Co Ltd Semiconductor device
JPS5633899A (en) * 1979-08-29 1981-04-04 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming multilayer wire
JPS56130948A (en) * 1980-03-18 1981-10-14 Nec Corp Semiconductor device
JPS5720452A (en) * 1980-07-11 1982-02-02 Matsushita Electric Ind Co Ltd Forming method for multilayer wiring
JPS5748249A (en) * 1980-09-08 1982-03-19 Nec Corp Semiconductor device
JPS57149751A (en) * 1981-03-11 1982-09-16 Nec Corp Semiconductor device
JPS57208161A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Semiconductor device
JPS57208160A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Semiconductor device
JPS58500680A (ja) * 1981-05-04 1983-04-28 モトロ−ラ・インコ−ポレ−テツド 低抵抗合成金属導体を具えた半導体デバイスおよびその製造方法
JPS6037745A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS6154648A (ja) * 1984-08-24 1986-03-18 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61152042A (ja) * 1984-12-20 1986-07-10 エツセ・ジ・エツセ・ミクロエレツトロニーカ・エツセ・ピ・ア 半導体素子の金属化パターンおよびその方法
JPS61159750A (ja) * 1984-12-31 1986-07-19 Sony Corp 半導体装置及びその製造方法
JPS61183942A (ja) * 1985-02-08 1986-08-16 Fujitsu Ltd 半導体装置の製造方法
JPS6260240A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 多層配線
JPS62118546A (ja) * 1985-11-19 1987-05-29 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63198357A (ja) * 1987-02-13 1988-08-17 Nec Corp 半導体装置
JPS6465856A (en) * 1987-09-05 1989-03-13 Fujitsu Ltd Semiconductor device and manufacture thereof

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5524454A (en) * 1978-08-08 1980-02-21 Nec Corp Insulating gate type field effect transistor
JPS5530876A (en) * 1978-08-28 1980-03-04 Fuji Electric Co Ltd Semiconductor device
JPS5633899A (en) * 1979-08-29 1981-04-04 Cho Lsi Gijutsu Kenkyu Kumiai Method of forming multilayer wire
JPS56130948A (en) * 1980-03-18 1981-10-14 Nec Corp Semiconductor device
JPS5720452A (en) * 1980-07-11 1982-02-02 Matsushita Electric Ind Co Ltd Forming method for multilayer wiring
JPS5748249A (en) * 1980-09-08 1982-03-19 Nec Corp Semiconductor device
JPS57149751A (en) * 1981-03-11 1982-09-16 Nec Corp Semiconductor device
JPS58500680A (ja) * 1981-05-04 1983-04-28 モトロ−ラ・インコ−ポレ−テツド 低抵抗合成金属導体を具えた半導体デバイスおよびその製造方法
JPS57208160A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Semiconductor device
JPS57208161A (en) * 1981-06-18 1982-12-21 Fujitsu Ltd Semiconductor device
JPS6037745A (ja) * 1983-08-10 1985-02-27 Seiko Epson Corp 半導体装置
JPS6154648A (ja) * 1984-08-24 1986-03-18 Mitsubishi Electric Corp 半導体装置の製造方法
JPS61152042A (ja) * 1984-12-20 1986-07-10 エツセ・ジ・エツセ・ミクロエレツトロニーカ・エツセ・ピ・ア 半導体素子の金属化パターンおよびその方法
JPS61159750A (ja) * 1984-12-31 1986-07-19 Sony Corp 半導体装置及びその製造方法
JPS61183942A (ja) * 1985-02-08 1986-08-16 Fujitsu Ltd 半導体装置の製造方法
JPS6260240A (ja) * 1985-09-10 1987-03-16 Matsushita Electric Ind Co Ltd 多層配線
JPS62118546A (ja) * 1985-11-19 1987-05-29 Mitsubishi Electric Corp 半導体装置の製造方法
JPS63198357A (ja) * 1987-02-13 1988-08-17 Nec Corp 半導体装置
JPS6465856A (en) * 1987-09-05 1989-03-13 Fujitsu Ltd Semiconductor device and manufacture thereof

Also Published As

Publication number Publication date
JPS5742220B2 (enExample) 1982-09-07

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