JPS5474369A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5474369A
JPS5474369A JP14182277A JP14182277A JPS5474369A JP S5474369 A JPS5474369 A JP S5474369A JP 14182277 A JP14182277 A JP 14182277A JP 14182277 A JP14182277 A JP 14182277A JP S5474369 A JPS5474369 A JP S5474369A
Authority
JP
Japan
Prior art keywords
metal layer
lead element
beam lead
airtight contact
pattern
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP14182277A
Other languages
Japanese (ja)
Inventor
Kunihiko Hayashi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14182277A priority Critical patent/JPS5474369A/en
Publication of JPS5474369A publication Critical patent/JPS5474369A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto

Abstract

PURPOSE: To obtain a semiconductor device of simple constitution with improved radiation characteristics of a beam lead element.
CONSTITUTION: At the time of forming wiring 2 on base body 1, pattern 3 for connecting a metal layer is formed at the same time where a beam lead element should sit and on the pattern 3, metal layer 4 is formed. Right under beam lead element 5, metal layer 4 is interposed before bonding. Further, when the surface is made in airtight contact with metal layer 4 by pushing beam lead element 5 down, more excellent radiation characteristics can be obtained. In addition, since an insulating protective film is formed on the surface of beam lead element 5, a short will not occur even if the airtight contact with metal layer 4 is made and since metal layer 4 is relatively soft, so that even if the surface of the beam lead element is uneven, they will come in airtight contact sufficiently adapting to their shapes.
COPYRIGHT: (C)1979,JPO&Japio
JP14182277A 1977-11-26 1977-11-26 Semiconductor device Pending JPS5474369A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14182277A JPS5474369A (en) 1977-11-26 1977-11-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14182277A JPS5474369A (en) 1977-11-26 1977-11-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5474369A true JPS5474369A (en) 1979-06-14

Family

ID=15300924

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14182277A Pending JPS5474369A (en) 1977-11-26 1977-11-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5474369A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127338A (en) * 1982-01-25 1983-07-29 Sharp Corp Structure of electronic part

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58127338A (en) * 1982-01-25 1983-07-29 Sharp Corp Structure of electronic part
JPS6364899B2 (en) * 1982-01-25 1988-12-14

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