JPS4813252B1 - - Google Patents

Info

Publication number
JPS4813252B1
JPS4813252B1 JP43042639A JP4263968A JPS4813252B1 JP S4813252 B1 JPS4813252 B1 JP S4813252B1 JP 43042639 A JP43042639 A JP 43042639A JP 4263968 A JP4263968 A JP 4263968A JP S4813252 B1 JPS4813252 B1 JP S4813252B1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP43042639A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4813252B1 publication Critical patent/JPS4813252B1/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0733—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with capacitors only
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Dram (AREA)
  • Semiconductor Memories (AREA)
JP43042639A 1967-07-14 1968-06-21 Pending JPS4813252B1 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US653415A US3387286A (en) 1967-07-14 1967-07-14 Field-effect transistor memory

Publications (1)

Publication Number Publication Date
JPS4813252B1 true JPS4813252B1 (ja) 1973-04-26

Family

ID=24620794

Family Applications (2)

Application Number Title Priority Date Filing Date
JP43042639A Pending JPS4813252B1 (ja) 1967-07-14 1968-06-21
JP7587973A Pending JPS5644516B1 (ja) 1967-07-14 1973-07-06

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP7587973A Pending JPS5644516B1 (ja) 1967-07-14 1973-07-06

Country Status (8)

Country Link
US (1) US3387286A (ja)
JP (2) JPS4813252B1 (ja)
BE (1) BE717096A (ja)
CH (1) CH466369A (ja)
FR (1) FR1575946A (ja)
GB (1) GB1181324A (ja)
NL (1) NL166567C (ja)
SE (1) SE354373B (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6241094U (ja) * 1985-08-30 1987-03-11

Families Citing this family (193)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3918081A (en) * 1968-04-23 1975-11-04 Philips Corp Integrated semiconductor device employing charge storage and charge transport for memory or delay line
NL6808352A (ja) * 1968-06-14 1969-12-16
US3997883A (en) * 1968-10-08 1976-12-14 The National Cash Register Company LSI random access memory system
US3599180A (en) * 1968-11-29 1971-08-10 Gen Instrument Corp Random access read-write memory system having data refreshing capabilities and memory cell therefor
US3643235A (en) * 1968-12-30 1972-02-15 Ibm Monolithic semiconductor memory
US3582909A (en) * 1969-03-07 1971-06-01 North American Rockwell Ratioless memory circuit using conditionally switched capacitor
GB1296067A (ja) * 1969-03-21 1972-11-15
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage
US3614749A (en) * 1969-06-02 1971-10-19 Burroughs Corp Information storage device
US3585613A (en) * 1969-08-27 1971-06-15 Ibm Field effect transistor capacitor storage cell
US3636530A (en) * 1969-09-10 1972-01-18 Litton Systems Inc Nonvolatile direct storage bistable circuit
US3614753A (en) * 1969-11-10 1971-10-19 Shell Oil Co Single-rail solid-state memory with capacitive storage
US3713114A (en) * 1969-12-18 1973-01-23 Ibm Data regeneration scheme for stored charge storage cell
US3653002A (en) * 1970-03-02 1972-03-28 Ncr Co Nonvolatile memory cell
US3654623A (en) * 1970-03-12 1972-04-04 Signetics Corp Binary memory circuit with coupled short term and long term storage means
US3656119A (en) * 1970-04-24 1972-04-11 Gen Instrument Corp Memory utilizing the non-linear input capacitance of an mos device
US3691535A (en) * 1970-06-15 1972-09-12 Sperry Rand Corp Solid state memory array
FR2112024B1 (ja) * 1970-07-02 1973-11-16 Commissariat Energie Atomique
US3685027A (en) * 1970-08-19 1972-08-15 Cogar Corp Dynamic mos memory array chip
US3902186A (en) * 1970-10-28 1975-08-26 Gen Electric Surface charge transistor devices
NL165601C (nl) * 1970-11-27 1981-04-15 Philips Nv Geintegreerd capacitief matrixgeheugen.
US3818463A (en) * 1970-12-17 1974-06-18 Ferranti Ltd Semiconductor information storage devices
JPS5024207B1 (ja) * 1970-12-29 1975-08-14
CA1019442A (en) * 1971-01-14 1977-10-18 Rca Corporation Charge coupled random access memory using semiconductor bit line
US3678475A (en) * 1971-02-01 1972-07-18 Ibm Read only memory and method of using same
US3720922A (en) * 1971-03-17 1973-03-13 Rca Corp Charge coupled memory
US3751722A (en) * 1971-04-30 1973-08-07 Standard Microsyst Smc Mos integrated circuit with substrate containing selectively formed resistivity regions
FR2137069B1 (ja) * 1971-05-12 1976-03-19 Commissariat Energie Atomique
US3744036A (en) * 1971-05-24 1973-07-03 Intel Corp Electrically programmable read only memory array
US3740731A (en) * 1971-08-02 1973-06-19 Texas Instruments Inc One transistor dynamic memory cell
US3740732A (en) * 1971-08-12 1973-06-19 Texas Instruments Inc Dynamic data storage cell
US3729722A (en) * 1971-09-17 1973-04-24 Gte Automatic Electric Lab Inc Dynamic mode integrated circuit memory with self-initiating refresh means
BE789501A (fr) * 1971-09-30 1973-03-29 Siemens Ag Condensateur electrique dans un circuit integre, utilise notamment comme memoire pour une memoire a semiconducteur
US3765000A (en) * 1971-11-03 1973-10-09 Honeywell Inf Systems Memory storage cell with single selection line and single input/output line
US3781827A (en) * 1971-11-24 1973-12-25 Gen Electric Device for storing information and providing an electric readout
US3705419A (en) * 1971-12-20 1972-12-05 Ibm Silicon gate fet-niobium oxide diode-memory cell
GB1415516A (en) * 1972-02-25 1975-11-26 Ultra Electronics Ltd Capacitive computer circuits
GB1357515A (en) * 1972-03-10 1974-06-26 Matsushita Electronics Corp Method for manufacturing an mos integrated circuit
US3771148A (en) * 1972-03-31 1973-11-06 Ncr Nonvolatile capacitive memory cell
US3755793A (en) * 1972-04-13 1973-08-28 Ibm Latent image memory with single-device cells of two types
US3798616A (en) * 1972-04-14 1974-03-19 North American Rockwell Strobe driver including a memory circuit
US3719932A (en) * 1972-04-27 1973-03-06 Sperry Rand Corp Bit organized integrated mnos memory circuit with dynamic decoding and store-restore circuitry
US3761901A (en) * 1972-06-28 1973-09-25 Ncr Nonvolatile memory cell
US3827034A (en) * 1972-09-14 1974-07-30 Ferranti Ltd Semiconductor information storage devices
IT993090B (it) * 1972-11-01 1975-09-30 Ibm Memoria a transistori bipolari con immagazzinamento capacitivo
US3811076A (en) * 1973-01-02 1974-05-14 Ibm Field effect transistor integrated circuit and memory
US3841926A (en) * 1973-01-02 1974-10-15 Ibm Integrated circuit fabrication process
US3882326A (en) * 1973-12-26 1975-05-06 Ibm Differential amplifier for sensing small signals
US3886468A (en) * 1973-12-20 1975-05-27 Ibm High gain amplifier
US3959781A (en) * 1974-11-04 1976-05-25 Intel Corporation Semiconductor random access memory
DE2454427C2 (de) * 1974-11-16 1982-04-29 Ibm Deutschland Gmbh, 7000 Stuttgart Assoziativspeicher
US3916390A (en) * 1974-12-31 1975-10-28 Ibm Dynamic memory with non-volatile back-up mode
JPS619741B2 (ja) * 1975-02-20 1986-03-25 Fujitsu Ltd
US4012757A (en) * 1975-05-05 1977-03-15 Intel Corporation Contactless random-access memory cell and cell pair
US3979734A (en) * 1975-06-16 1976-09-07 International Business Machines Corporation Multiple element charge storage memory cell
JPS525224A (en) * 1975-07-02 1977-01-14 Hitachi Ltd 1trs-type memory cell
JPS5279679A (en) * 1975-12-26 1977-07-04 Toshiba Corp Semiconductor memory device
US4295264A (en) * 1975-12-29 1981-10-20 Texas Instruments Incorporated Method of making integrated circuit MOS capacitor using implanted region to change threshold
US4240092A (en) * 1976-09-13 1980-12-16 Texas Instruments Incorporated Random access memory cell with different capacitor and transistor oxide thickness
JPS5496379A (en) * 1976-02-02 1979-07-30 Tdk Corp Semiconductor memory device
US4075045A (en) * 1976-02-09 1978-02-21 International Business Machines Corporation Method for fabricating FET one-device memory cells with two layers of polycrystalline silicon and fabrication of integrated circuits containing arrays of the memory cells charge storage capacitors utilizing five basic pattern deliberating steps
US4183040A (en) * 1976-02-09 1980-01-08 International Business Machines Corporation MOS RAM with implant forming peripheral depletion MOSFET channels and capacitor bottom electrodes
GB1521955A (en) * 1976-03-16 1978-08-23 Tokyo Shibaura Electric Co Semiconductor memory device
US4125933A (en) * 1976-07-08 1978-11-21 Burroughs Corporation IGFET Integrated circuit memory cell
US5434438A (en) * 1976-09-13 1995-07-18 Texas Instruments Inc. Random access memory cell with a capacitor
US5168075A (en) * 1976-09-13 1992-12-01 Texas Instruments Incorporated Random access memory cell with implanted capacitor region
US4172282A (en) * 1976-10-29 1979-10-23 International Business Machines Corporation Processor controlled memory refresh
US4112575A (en) * 1976-12-20 1978-09-12 Texas Instruments Incorporated Fabrication methods for the high capacity ram cell
US4072976A (en) * 1976-12-28 1978-02-07 Hughes Aircraft Company Gate protection device for MOS circuits
US4188671A (en) * 1977-01-24 1980-02-12 Bell Telephone Laboratories, Incorporated Switched-capacitor memory
JPS5399736A (en) * 1977-02-10 1978-08-31 Toshiba Corp Semiconductor memory unit
DE2807181C2 (de) * 1977-02-21 1985-11-28 Zaidan Hojin Handotai Kenkyu Shinkokai, Sendai, Miyagi Halbleiterspeichervorrichtung
DE2720533A1 (de) * 1977-05-06 1978-11-09 Siemens Ag Monolithisch integrierte schaltungsanordnung mit ein-transistor- speicherelementen
JPS5819141B2 (ja) * 1977-07-28 1983-04-16 富士通株式会社 半導体装置
US4249194A (en) * 1977-08-29 1981-02-03 Texas Instruments Incorporated Integrated circuit MOS capacitor using implanted region to change threshold
JPS5461429A (en) * 1977-10-26 1979-05-17 Hitachi Ltd Dynamic mis memory circuit
US4219834A (en) * 1977-11-11 1980-08-26 International Business Machines Corporation One-device monolithic random access memory and method of fabricating same
US4152779A (en) * 1978-04-06 1979-05-01 Texas Instruments Incorporated MOS ram cell having improved refresh time
JPS6044752B2 (ja) * 1978-04-24 1985-10-05 日本電気株式会社 ダイナミツクメモリ
JPS5522581A (en) * 1978-08-30 1980-02-18 Tdk Corp Semi-conductor device
JPS5562760A (en) * 1978-08-30 1980-05-12 Tdk Corp Semiconductor device
JPS5522882A (en) * 1978-08-30 1980-02-18 Tdk Corp Semiconductor device
US4533843A (en) * 1978-09-07 1985-08-06 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
US4748349A (en) * 1978-09-22 1988-05-31 Texas Instruments Incorporated High performance dynamic sense amplifier with voltage boost for row address lines
DE2855118C2 (de) * 1978-12-20 1981-03-26 IBM Deutschland GmbH, 70569 Stuttgart Dynamischer FET-Speicher
JPS5623771A (en) * 1979-08-01 1981-03-06 Hitachi Ltd Semiconductor memory
JPS5847862B2 (ja) * 1979-08-30 1983-10-25 富士通株式会社 半導体記憶装置及びその製造方法
JPS6037620B2 (ja) * 1979-12-11 1985-08-27 株式会社東芝 半導体記憶装置
US4319342A (en) * 1979-12-26 1982-03-09 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array
USRE32236E (en) * 1979-12-26 1986-08-26 International Business Machines Corporation One device field effect transistor (FET) AC stable random access memory (RAM) array
US4300210A (en) * 1979-12-27 1981-11-10 International Business Machines Corp. Calibrated sensing system
JPS5696854A (en) * 1979-12-29 1981-08-05 Fujitsu Ltd Semiconductor memory device
JPS56100463A (en) * 1980-01-14 1981-08-12 Toshiba Corp Semiconductor memory device
US4335450A (en) * 1980-01-30 1982-06-15 International Business Machines Corporation Non-destructive read out field effect transistor memory cell system
US4240845A (en) * 1980-02-04 1980-12-23 International Business Machines Corporation Method of fabricating random access memory device
US4287576A (en) * 1980-03-26 1981-09-01 International Business Machines Corporation Sense amplifying system for memories with small cells
US4608751A (en) * 1980-04-07 1986-09-02 Texas Instruments Incorporated Method of making dynamic memory array
US4301519A (en) * 1980-05-02 1981-11-17 International Business Machines Corporation Sensing technique for memories with small cells
US4397075A (en) * 1980-07-03 1983-08-09 International Business Machines Corporation FET Memory cell structure and process
US4409722A (en) * 1980-08-29 1983-10-18 International Business Machines Corporation Borderless diffusion contact process and structure
JPS5660052A (en) * 1980-10-20 1981-05-23 Toshiba Corp Semiconductor memory device
US4423490A (en) * 1980-10-27 1983-12-27 Burroughs Corporation JFET Dynamic memory
US4363110A (en) * 1980-12-22 1982-12-07 International Business Machines Corp. Non-volatile dynamic RAM cell
US4413329A (en) * 1980-12-24 1983-11-01 International Business Machines Corporation Dynamic memory cell
US4511911A (en) * 1981-07-22 1985-04-16 International Business Machines Corporation Dense dynamic memory cell structure and process
US4459609A (en) * 1981-09-14 1984-07-10 International Business Machines Corporation Charge-stabilized memory
DE3173745D1 (en) * 1981-10-30 1986-03-20 Ibm Deutschland Fet memory
US4445201A (en) * 1981-11-30 1984-04-24 International Business Machines Corporation Simple amplifying system for a dense memory array
US4471471A (en) * 1981-12-31 1984-09-11 International Business Machines Corporation Non-volatile RAM device
US4446535A (en) * 1981-12-31 1984-05-01 International Business Machines Corporation Non-inverting non-volatile dynamic RAM cell
US4432072A (en) * 1981-12-31 1984-02-14 International Business Machines Corporation Non-volatile dynamic RAM cell
US4506351A (en) * 1982-06-23 1985-03-19 International Business Machines Corporation One-device random access memory having enhanced sense signal
JPS592365A (ja) * 1982-06-28 1984-01-07 Fujitsu Ltd ダイナミツク型半導体記憶装置
JPS602782B2 (ja) * 1982-06-30 1985-01-23 富士通株式会社 半導体記憶装置
US4493056A (en) * 1982-06-30 1985-01-08 International Business Machines Corporation RAM Utilizing offset contact regions for increased storage capacitance
JPH0612619B2 (ja) * 1982-09-22 1994-02-16 株式会社日立製作所 半導体メモリ装置
US4542340A (en) * 1982-12-30 1985-09-17 Ibm Corporation Testing method and structure for leakage current characterization in the manufacture of dynamic RAM cells
JPS59161061A (ja) * 1983-02-10 1984-09-11 Fujitsu Ltd 半導体記憶装置
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
US4574365A (en) * 1983-04-18 1986-03-04 International Business Machines Corporation Shared access lines memory cells
US4642491A (en) * 1983-06-24 1987-02-10 International Business Machines Corporation Single transistor driver circuit
JPS60209996A (ja) * 1984-03-31 1985-10-22 Toshiba Corp 半導体記憶装置
US4609429A (en) * 1984-07-02 1986-09-02 International Business Machines Corporation Process for making a small dynamic memory cell structure
US4652898A (en) * 1984-07-19 1987-03-24 International Business Machines Corporation High speed merged charge memory
US4694561A (en) * 1984-11-30 1987-09-22 American Telephone And Telegraph Company, At&T Bell Laboratories Method of making high-performance trench capacitors for DRAM cells
US4648073A (en) * 1984-12-31 1987-03-03 International Business Machines Corporation Sequential shared access lines memory cells
JPH0682800B2 (ja) * 1985-04-16 1994-10-19 株式会社東芝 半導体記憶装置
EP0232361B1 (en) * 1985-07-25 1992-09-30 AT&T Corp. High-performance dram arrays including trench capacitors
US4704368A (en) * 1985-10-30 1987-11-03 International Business Machines Corporation Method of making trench-incorporated monolithic semiconductor capacitor and high density dynamic memory cells including the capacitor
US4675982A (en) * 1985-10-31 1987-06-30 International Business Machines Corporation Method of making self-aligned recessed oxide isolation regions
US4751558A (en) * 1985-10-31 1988-06-14 International Business Machines Corporation High density memory with field shield
US4811067A (en) * 1986-05-02 1989-03-07 International Business Machines Corporation High density vertically structured memory
US4679302A (en) * 1986-05-12 1987-07-14 Northern Telecom Limited Double polysilicon integrated circuit process
JPS62115768A (ja) * 1986-06-13 1987-05-27 Nec Corp 集積回路装置
US4769786A (en) * 1986-07-15 1988-09-06 International Business Machines Corporation Two square memory cells
USRE33972E (en) * 1986-07-15 1992-06-23 International Business Machines Corporation Two square memory cells
JPS6332877A (ja) * 1986-07-25 1988-02-12 松下電工株式会社 リ−ルタツプ
US4785337A (en) * 1986-10-17 1988-11-15 International Business Machines Corporation Dynamic ram cell having shared trench storage capacitor with sidewall-defined bridge contacts and gate electrodes
US4871688A (en) * 1988-05-02 1989-10-03 Micron Technology, Inc. Sequence of etching polysilicon in semiconductor memory devices
JPH023187A (ja) * 1988-06-09 1990-01-08 Toshiba Corp 不揮発性半導体メモリ
JP2682021B2 (ja) * 1988-06-29 1997-11-26 富士通株式会社 半導体メモリ装置
US5001525A (en) * 1989-03-27 1991-03-19 International Business Machines Corporation Two square memory cells having highly conductive word lines
US5134616A (en) * 1990-02-13 1992-07-28 International Business Machines Corporation Dynamic ram with on-chip ecc and optimized bit and word redundancy
GB9007791D0 (en) * 1990-04-06 1990-06-06 Foss Richard C High voltage boosted wordline supply charge pump and regulator for dram
GB9007790D0 (en) * 1990-04-06 1990-06-06 Lines Valerie L Dynamic memory wordline driver scheme
US5307356A (en) * 1990-04-16 1994-04-26 International Business Machines Corporation Interlocked on-chip ECC system
US5024993A (en) * 1990-05-02 1991-06-18 Microelectronics & Computer Technology Corporation Superconducting-semiconducting circuits, devices and systems
US5378650A (en) * 1990-10-12 1995-01-03 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and a manufacturing method thereof
JPH05225798A (ja) * 1991-08-14 1993-09-03 Internatl Business Mach Corp <Ibm> メモリシステム
US5471087A (en) * 1991-10-02 1995-11-28 Buerger, Jr.; Walter R. Semi-monolithic memory with high-density cell configurations
JP3326267B2 (ja) * 1994-03-01 2002-09-17 三菱電機株式会社 半導体装置およびその製造方法
US5742544A (en) 1994-04-11 1998-04-21 Mosaid Technologies Incorporated Wide databus architecture
US7511621B1 (en) 1995-08-31 2009-03-31 Intermec Ip Corp. High-performance mobile power antennas
US5716882A (en) * 1996-10-28 1998-02-10 Vanguard International Semiconductor Corp. Method for forming a DRAM capacitor by forming a trench in a polysilicon layer
US5710738A (en) * 1996-12-17 1998-01-20 Powerchip Semiconductor Corp. Low power dynamic random access memory
US6021063A (en) * 1997-01-13 2000-02-01 Vanguard International Semiconductor Corporation Method and structure for improving data retention in a DRAM
US6551857B2 (en) 1997-04-04 2003-04-22 Elm Technology Corporation Three dimensional structure integrated circuits
US5982657A (en) 1997-12-18 1999-11-09 Texas Instruments Incorporated Circuit and method for biasing the charging capacitor of a semiconductor memory array
US6249460B1 (en) 2000-02-28 2001-06-19 Micron Technology, Inc. Dynamic flash memory cells with ultrathin tunnel oxides
US6384448B1 (en) 2000-02-28 2002-05-07 Micron Technology, Inc. P-channel dynamic flash memory cells with ultrathin tunnel oxides
US6605961B1 (en) 2000-02-29 2003-08-12 Micron Technology, Inc. Low voltage PLA's with ultrathin tunnel oxides
US6351428B2 (en) 2000-02-29 2002-02-26 Micron Technology, Inc. Programmable low voltage decode circuits with ultra-thin tunnel oxides
US6639835B2 (en) 2000-02-29 2003-10-28 Micron Technology, Inc. Static NVRAM with ultra thin tunnel oxides
EP1158583A1 (en) 2000-05-23 2001-11-28 STMicroelectronics S.r.l. Low on-resistance LDMOS
US6664589B2 (en) * 2001-08-30 2003-12-16 Micron Technology, Inc. Technique to control tunneling currents in DRAM capacitors, cells, and devices
AU2002368294A1 (en) * 2002-10-21 2004-05-04 Victor Nikolaevich Mourachev Memory cell for a dynamic storing device
DE10255755B4 (de) * 2002-11-28 2006-07-13 Schneider, Christian, Dr. Integrierte elektronische Schaltung mit Feldeffekt-Sensoren zum Nachweis von Biomolekülen
US6906529B2 (en) 2003-06-10 2005-06-14 Stmicroelectronics, Inc. Capacitive sensor device with electrically configurable pixels
US6982897B2 (en) 2003-10-07 2006-01-03 International Business Machines Corporation Nondestructive read, two-switch, single-charge-storage device RAM devices
US7352025B2 (en) * 2003-12-08 2008-04-01 International Business Machines Corporation Semiconductor memory device with increased node capacitance
WO2007051147A2 (en) * 2005-10-26 2007-05-03 Capso Vision, Inc. Onboard data storage and method
US7495993B2 (en) * 2005-10-26 2009-02-24 Capso Vision, Inc. Onboard data storage and method
US7525147B2 (en) * 2005-11-09 2009-04-28 Nanyang Technological University Memory structure
US8027212B2 (en) * 2006-03-31 2011-09-27 Kristopher Chad Breen Method and apparatus for a dynamic semiconductor memory with compact sense amplifier circuit
US8648403B2 (en) * 2006-04-21 2014-02-11 International Business Machines Corporation Dynamic memory cell structures
DE102006059110A1 (de) * 2006-12-08 2008-06-12 Technische Universität Berlin Speicherzelle und Verfahren zum Speichern von Daten
US7466617B2 (en) * 2007-01-16 2008-12-16 International Business Machines Corporation Multi-port dynamic memory structures
US8035139B2 (en) * 2007-09-02 2011-10-11 Suvolta, Inc. Dynamic random access memory having junction field effect transistor cell access device
US7705386B2 (en) * 2008-01-07 2010-04-27 International Business Machines Corporation Providing isolation for wordline passing over deep trench capacitor
US7923815B2 (en) * 2008-01-07 2011-04-12 International Business Machines Corporation DRAM having deep trench capacitors with lightly doped buried plates
US8110464B2 (en) * 2008-03-14 2012-02-07 International Business Machines Corporation SOI protection for buried plate implant and DT bottle ETCH
US7977172B2 (en) * 2008-12-08 2011-07-12 Advanced Micro Devices, Inc. Dynamic random access memory (DRAM) cells and methods for fabricating the same
US8009459B2 (en) * 2008-12-30 2011-08-30 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit for high speed dynamic memory
US10878142B2 (en) * 2015-10-26 2020-12-29 Pgs Geophysical As Bipole source modeling
US10825815B2 (en) 2017-05-08 2020-11-03 Micron Technology, Inc. Memory arrays
KR102400951B1 (ko) 2017-05-08 2022-05-23 마이크론 테크놀로지, 인크 메모리 어레이
US11043499B2 (en) 2017-07-27 2021-06-22 Micron Technology, Inc. Memory arrays comprising memory cells
USD848384S1 (en) * 2017-08-17 2019-05-14 Epistar Corporation Transistor
US10950618B2 (en) 2018-11-29 2021-03-16 Micron Technology, Inc. Memory arrays
US10985162B2 (en) 2018-12-14 2021-04-20 John Bennett System for accurate multiple level gain cells
US11302697B2 (en) 2020-01-28 2022-04-12 Integrated Silicon Solution, (Cayman) Inc. DRAM with selective epitaxial cell transistor
US11329048B2 (en) 2020-03-24 2022-05-10 Integrated Silicon Solution, (Cayman) Inc. DRAM with selective epitaxial transistor and buried bitline
US11668845B2 (en) 2021-07-08 2023-06-06 Consolidated Nuclear Security, LLC Wide band gap semiconductor NAND based neutron detection systems and methods

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3025411A (en) * 1960-05-23 1962-03-13 Rca Corp Drive circuit for a computer memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6241094U (ja) * 1985-08-30 1987-03-11

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US3387286A (en) 1968-06-04
DE1774482A1 (de) 1972-02-03
CH466369A (de) 1968-12-15
JPS5644516B1 (ja) 1981-10-20
BE717096A (ja) 1968-12-02
NL166567C (nl) 1981-08-17
NL6808354A (ja) 1969-01-16
DE1774482B2 (de) 1973-02-15
GB1181324A (en) 1970-02-11
FR1575946A (ja) 1969-07-25
NL166567B (nl) 1981-03-16
SE354373B (ja) 1973-03-05

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