JPS5522581A - Semi-conductor device - Google Patents

Semi-conductor device

Info

Publication number
JPS5522581A
JPS5522581A JP10576778A JP10576778A JPS5522581A JP S5522581 A JPS5522581 A JP S5522581A JP 10576778 A JP10576778 A JP 10576778A JP 10576778 A JP10576778 A JP 10576778A JP S5522581 A JPS5522581 A JP S5522581A
Authority
JP
Japan
Prior art keywords
same
thickness
insulator
semi
dielectrics
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10576778A
Other languages
Japanese (ja)
Inventor
Shunpei Yamazaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
TDK Corp
Original Assignee
TDK Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by TDK Corp filed Critical TDK Corp
Priority to JP10576778A priority Critical patent/JPS5522581A/en
Publication of JPS5522581A publication Critical patent/JPS5522581A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To try multiple formation of function, providing insulating gate type electric field effect transistor and a capacitor made from dielectrics having dielectric property on the common semi-conductor base.
CONSTITUTION: For example, field insulator 2 is formed oxidizing semi-conductor base selectively in a thickness of approx. 5000A∼2μ. Silicon film 3 having conductive type of n type is formed through vapor phase method of silane in a thickness of 0.5∼2μ on them. A lead wire extended from the source drain is formed eliminating film 3 selectively through photo etching method. Insulator which is the same or the same main component and the same or nearly the same thickness is formed on the upper surface of silicon film 4, 5 with gate insulator of FET formed. Eventually, a part of it can be used as dielectrics to form volume portion of capacitor.
COPYRIGHT: (C)1980,JPO&Japio
JP10576778A 1978-08-30 1978-08-30 Semi-conductor device Pending JPS5522581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10576778A JPS5522581A (en) 1978-08-30 1978-08-30 Semi-conductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10576778A JPS5522581A (en) 1978-08-30 1978-08-30 Semi-conductor device

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP3062571A Division JPS5624385B1 (en) 1971-05-07 1971-05-07

Publications (1)

Publication Number Publication Date
JPS5522581A true JPS5522581A (en) 1980-02-18

Family

ID=14416324

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10576778A Pending JPS5522581A (en) 1978-08-30 1978-08-30 Semi-conductor device

Country Status (1)

Country Link
JP (1) JPS5522581A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192859A (en) * 1988-07-26 1993-03-09 Kabushiki Kaisha Nippon Conlux Card carrier in card reader

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5192859A (en) * 1988-07-26 1993-03-09 Kabushiki Kaisha Nippon Conlux Card carrier in card reader

Similar Documents

Publication Publication Date Title
KR930005257A (en) Thin film field effect element and its manufacturing method
KR930006977A (en) Semiconductor device and manufacturing method thereof
KR910013540A (en) Local interconnect etching method
JPS5799777A (en) Metal oxide semiconductor type semiconductor device
KR920022562A (en) Semiconductor Integrated Circuit Manufacturing Method
JPS5522581A (en) Semi-conductor device
JPS54161282A (en) Manufacture of mos semiconductor device
JPS5730358A (en) Manufacture of semiconductor device
JPS56125875A (en) Semiconductor integrated circuit device
JPS55108771A (en) Semiconductor device
JPS5740967A (en) Integrated circuit device
JPS5269585A (en) Semiconductor device
JPS5593268A (en) Manufacture of semiconductor device
JPS54143076A (en) Semiconductor device and its manufacture
JPS5412276A (en) Semiconductor device
JPS56150864A (en) Semiconductor device
JPS5572061A (en) Semiconductor device
JPS56111257A (en) Preparation of insulated gate type semiconductor ic device
JPS6477945A (en) Semiconductor device for suppressing operation of parasitic transistor and its manufacture
JPS54107679A (en) Semiconductor device
KR900015319A (en) Semiconductor Memory and Manufacturing Method
KR900005594A (en) Method for manufacturing a capacitor of semiconductor device
KR900005611A (en) Side transistor manufacturing method
JPS5732673A (en) Semiconductor device and manufacture thereof
JPS57143865A (en) Metal oxide semiconductor type semiconductor device