JPS5461429A - Dynamic mis memory circuit - Google Patents

Dynamic mis memory circuit

Info

Publication number
JPS5461429A
JPS5461429A JP12751277A JP12751277A JPS5461429A JP S5461429 A JPS5461429 A JP S5461429A JP 12751277 A JP12751277 A JP 12751277A JP 12751277 A JP12751277 A JP 12751277A JP S5461429 A JPS5461429 A JP S5461429A
Authority
JP
Japan
Prior art keywords
word clock
timing signal
capacitor
bootstrap capacitor
xwc
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP12751277A
Other languages
Japanese (ja)
Other versions
JPS6122396B2 (en
Inventor
Kunihiko Ikuzaki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP12751277A priority Critical patent/JPS5461429A/en
Publication of JPS5461429A publication Critical patent/JPS5461429A/en
Publication of JPS6122396B2 publication Critical patent/JPS6122396B2/ja
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/408—Address circuits
    • G11C11/4085—Word line control circuits, e.g. word line drivers, - boosters, - pull-up, - pull-down, - precharge

Abstract

PURPOSE:To establish the dynamic MIS memory circuit preventing the voltage loss for the switching MISFET constituting the memory cell. CONSTITUTION:To prevent the voltage loss for write-in due to the threshold voltage of the switching MISFET of memory cell, the delay circuit 3 and the boot- strap capacitor CB1 are provided. That is, the delay circuit 3 forms the timing signal X'wc delayed by a given time td from the word clock Xwc, and the timing signal X'wc is fed to another end of the bootstrap capacitor CB1 connected to the output terminal of the word clock generation circuit 1 for one end. Thus, with the word clock Xwc rising with the leading of the address information ao or a'o, charging is made to the parasitic capacitor CST and the bootstrap capacitor at the output end is made, since another end of the bootstrap capacitor is lifted up with the leading of the timing signal X'wc, the voltage level of the word clock is made greater by DELTAV.
JP12751277A 1977-10-26 1977-10-26 Dynamic mis memory circuit Granted JPS5461429A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP12751277A JPS5461429A (en) 1977-10-26 1977-10-26 Dynamic mis memory circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12751277A JPS5461429A (en) 1977-10-26 1977-10-26 Dynamic mis memory circuit

Related Child Applications (4)

Application Number Title Priority Date Filing Date
JP59152902A Division JPS60121594A (en) 1984-07-25 1984-07-25 Mis memory circuit
JP59152898A Division JPS60121591A (en) 1984-07-25 1984-07-25 Semiconductor memory device
JP59152899A Division JPS60121592A (en) 1984-07-25 1984-07-25 Mis memory circuit
JP59152901A Division JPS60121593A (en) 1984-07-25 1984-07-25 Mis memory circuit

Publications (2)

Publication Number Publication Date
JPS5461429A true JPS5461429A (en) 1979-05-17
JPS6122396B2 JPS6122396B2 (en) 1986-05-31

Family

ID=14961825

Family Applications (1)

Application Number Title Priority Date Filing Date
JP12751277A Granted JPS5461429A (en) 1977-10-26 1977-10-26 Dynamic mis memory circuit

Country Status (1)

Country Link
JP (1) JPS5461429A (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712484A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Differential amplifier
JPS5782284A (en) * 1980-11-07 1982-05-22 Hitachi Ltd Memory device
JPS5792485A (en) * 1980-11-28 1982-06-09 Mitsubishi Electric Corp Memory
EP0058509A2 (en) * 1981-02-12 1982-08-25 Fujitsu Limited Semiconductor circuit for driving clock signal line
JPS5891595A (en) * 1982-11-15 1983-05-31 Toshiba Corp Dynamic semiconductor storage device
JPS5924495A (en) * 1982-08-02 1984-02-08 Hitachi Ltd Bootstrap circuit
JPS63247990A (en) * 1987-10-21 1988-10-14 Hitachi Ltd Semiconductor memory device
JPH02236899A (en) * 1990-02-23 1990-09-19 Hitachi Ltd Semiconductor integrated circuit
JP2013008438A (en) * 2011-05-20 2013-01-10 Semiconductor Energy Lab Co Ltd Memory device and driving method for the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5712484A (en) * 1980-06-26 1982-01-22 Mitsubishi Electric Corp Differential amplifier
JPS5782284A (en) * 1980-11-07 1982-05-22 Hitachi Ltd Memory device
JPS5792485A (en) * 1980-11-28 1982-06-09 Mitsubishi Electric Corp Memory
JPS6220633B2 (en) * 1980-11-28 1987-05-08 Mitsubishi Electric Corp
EP0058509A2 (en) * 1981-02-12 1982-08-25 Fujitsu Limited Semiconductor circuit for driving clock signal line
JPS5924495A (en) * 1982-08-02 1984-02-08 Hitachi Ltd Bootstrap circuit
JPS5891595A (en) * 1982-11-15 1983-05-31 Toshiba Corp Dynamic semiconductor storage device
JPS622396B2 (en) * 1982-11-15 1987-01-19 Tokyo Shibaura Electric Co
JPS63247990A (en) * 1987-10-21 1988-10-14 Hitachi Ltd Semiconductor memory device
JPH0381235B2 (en) * 1987-10-21 1991-12-27 Hitachi Ltd
JPH02236899A (en) * 1990-02-23 1990-09-19 Hitachi Ltd Semiconductor integrated circuit
JP2013008438A (en) * 2011-05-20 2013-01-10 Semiconductor Energy Lab Co Ltd Memory device and driving method for the same

Also Published As

Publication number Publication date
JPS6122396B2 (en) 1986-05-31

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