NL6808352A - - Google Patents

Info

Publication number
NL6808352A
NL6808352A NL6808352A NL6808352A NL6808352A NL 6808352 A NL6808352 A NL 6808352A NL 6808352 A NL6808352 A NL 6808352A NL 6808352 A NL6808352 A NL 6808352A NL 6808352 A NL6808352 A NL 6808352A
Authority
NL
Netherlands
Application number
NL6808352A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to NL6808352A priority Critical patent/NL6808352A/xx
Priority to US831397A priority patent/US3621347A/en
Priority to SE08308/69A priority patent/SE355695B/xx
Priority to BE734486D priority patent/BE734486A/xx
Priority to CH905969A priority patent/CH507593A/de
Priority to FR6919827A priority patent/FR2011942B1/fr
Priority to GB30055/69A priority patent/GB1255976A/en
Priority to DE19691930606 priority patent/DE1930606A1/de
Publication of NL6808352A publication Critical patent/NL6808352A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
NL6808352A 1968-06-14 1968-06-14 NL6808352A (ja)

Priority Applications (8)

Application Number Priority Date Filing Date Title
NL6808352A NL6808352A (ja) 1968-06-14 1968-06-14
US831397A US3621347A (en) 1968-06-14 1969-06-09 Semiconductor device comprising a field effect transistor having an insulated gate electrode and circuit arrangement comprising such a semiconductor device
SE08308/69A SE355695B (ja) 1968-06-14 1969-06-11
BE734486D BE734486A (ja) 1968-06-14 1969-06-12
CH905969A CH507593A (de) 1968-06-14 1969-06-13 Halbleiteranordnung mit einem Halbleiterbauelement, das einen mindestens teilweise mit einer Isolierschicht überzogenen Halbleiterkörper aufweist, in dem ein Feldeffekttransistor mit isolierter Torelektrode angeordnet ist
FR6919827A FR2011942B1 (ja) 1968-06-14 1969-06-13
GB30055/69A GB1255976A (en) 1968-06-14 1969-06-13 Semiconductor devices and circuit arrangements
DE19691930606 DE1930606A1 (de) 1968-06-14 1969-06-16 Halbleiterbauelement mit einem Feldeffekttransistor mit isolierter Torelektrode und Schaltungsanordnung mit einem solchen Halbleiterbauelement

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL6808352A NL6808352A (ja) 1968-06-14 1968-06-14

Publications (1)

Publication Number Publication Date
NL6808352A true NL6808352A (ja) 1969-12-16

Family

ID=19803892

Family Applications (1)

Application Number Title Priority Date Filing Date
NL6808352A NL6808352A (ja) 1968-06-14 1968-06-14

Country Status (8)

Country Link
US (1) US3621347A (ja)
BE (1) BE734486A (ja)
CH (1) CH507593A (ja)
DE (1) DE1930606A1 (ja)
FR (1) FR2011942B1 (ja)
GB (1) GB1255976A (ja)
NL (1) NL6808352A (ja)
SE (1) SE355695B (ja)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3704384A (en) * 1971-03-30 1972-11-28 Ibm Monolithic capacitor structure
JPS53128281A (en) * 1977-04-15 1978-11-09 Hitachi Ltd Insulated gate field effect type semiconductor device for large power
US4173022A (en) * 1978-05-09 1979-10-30 Rca Corp. Integrated gate field effect transistors having closed gate structure with controlled avalanche characteristics
US4389660A (en) * 1980-07-31 1983-06-21 Rockwell International Corporation High power solid state switch
US4471405A (en) * 1981-12-28 1984-09-11 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4423087A (en) * 1981-12-28 1983-12-27 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US5589707A (en) * 1994-11-07 1996-12-31 International Business Machines Corporation Multi-surfaced capacitor for storing more charge per horizontal chip area
US5770969A (en) * 1995-08-22 1998-06-23 International Business Machines Corporation Controllable decoupling capacitor
US5828259A (en) * 1996-11-18 1998-10-27 International Business Machines Corporation Method and apparatus for reducing disturbances on an integrated circuit
KR100827665B1 (ko) * 2007-02-23 2008-05-07 삼성전자주식회사 반도체 장치 및 이 장치의 디커플링 커패시터의 레이아웃방법

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3268827A (en) * 1963-04-01 1966-08-23 Rca Corp Insulated-gate field-effect transistor amplifier having means to reduce high frequency instability
US3315096A (en) * 1963-02-22 1967-04-18 Rca Corp Electrical circuit including an insulated-gate field effect transistor having an epitaxial layer of relatively lightly doped semiconductor material on a base layer of more highly doped semiconductor material for improved operation at ultra-high frequencies
US3289093A (en) * 1964-02-20 1966-11-29 Fairchild Camera Instr Co A. c. amplifier using enhancement-mode field effect devices
FR1484322A (fr) * 1965-06-22 1967-06-09 Philips Nv Composant semi-conducteur complexe
US3597667A (en) * 1966-03-01 1971-08-03 Gen Electric Silicon oxide-silicon nitride coatings for semiconductor devices
FR1526386A (fr) * 1966-05-09 1968-05-24 Matsushita Electronics Corp Transistor à effet de champ et électrode de commande isolée
US3463974A (en) * 1966-07-01 1969-08-26 Fairchild Camera Instr Co Mos transistor and method of manufacture
US3313959A (en) * 1966-08-08 1967-04-11 Hughes Aircraft Co Thin-film resonance device
FR1541432A (fr) * 1966-10-21 1968-10-04 Philips Nv Dispositif semiconducteur comportant un transistor à effet de champ, à électrode de porte isolée et circuit renfermant un dispositif semiconducteur de ce genre
US3492511A (en) * 1966-12-22 1970-01-27 Texas Instruments Inc High input impedance circuit for a field effect transistor including capacitive gate biasing means
US3387286A (en) * 1967-07-14 1968-06-04 Ibm Field-effect transistor memory
US3462657A (en) * 1968-03-07 1969-08-19 Gen Electric Protection means for surface semiconductor devices having thin oxide films therein

Also Published As

Publication number Publication date
SE355695B (ja) 1973-04-30
GB1255976A (en) 1971-12-08
CH507593A (de) 1971-05-15
FR2011942B1 (ja) 1974-12-06
DE1930606A1 (de) 1970-09-03
FR2011942A1 (ja) 1970-03-13
US3621347A (en) 1971-11-16
BE734486A (ja) 1969-12-12

Similar Documents

Publication Publication Date Title
AU428130B2 (ja)
FR2011942B1 (ja)
FR2003442B1 (ja)
AU416157B2 (ja)
AU421558B1 (ja)
AU3789668A (ja)
BE727062A (ja)
BE722695A (ja)
AU4464266A (ja)
BE728054A (ja)
BE709274A (ja)
BE727914A (ja)
BE727796A (ja)
BE727665A (ja)
BE727641A (ja)
BE727625A (ja)
BE727368A (ja)
BE727291A (ja)
BE727176A (ja)
BE727154A (ja)
BE727128A (ja)
BE709301A (ja)
BE726696A (ja)
BE726317A (ja)
BE725726A (ja)