JPS5496379A - Semiconductor memory device - Google Patents
Semiconductor memory deviceInfo
- Publication number
- JPS5496379A JPS5496379A JP1014176A JP1014176A JPS5496379A JP S5496379 A JPS5496379 A JP S5496379A JP 1014176 A JP1014176 A JP 1014176A JP 1014176 A JP1014176 A JP 1014176A JP S5496379 A JPS5496379 A JP S5496379A
- Authority
- JP
- Japan
- Prior art keywords
- trapping center
- carrier
- trapping
- constitution
- standard
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000010408 film Substances 0.000 abstract 2
- 239000012212 insulator Substances 0.000 abstract 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 abstract 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 235000011114 ammonium hydroxide Nutrition 0.000 abstract 1
- 229910052681 coesite Inorganic materials 0.000 abstract 1
- 229910052906 cristobalite Inorganic materials 0.000 abstract 1
- 239000011159 matrix material Substances 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 229910052682 stishovite Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
- 239000010409 thin film Substances 0.000 abstract 1
- 229910052905 tridymite Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Abstract
PURPOSE:To obtain a memory device of excellent performance by unifying the semiconductor memory possessing the nonvolatile trapping center and the standard MISFET in the series connection. CONSTITUTION:SiO2 thin film 2 is formed selectively at the gate region on the (100)-face of P-type Si1, and then insulator film 3 is coated through the reaction between SiH4 and NH4OH, with the Si semiconductor set as the trapping center of the positive hole and the electron. Then the gate electrode is attached. Thus, serial connected substance 22 of FET20 incorporating the trapping center in the gate insulator film is formed to standard MISFET21. The carrier is injected from the substrate of the gate electrode via the tunnel effect or the avalanche effect to perform trapping centering on the nonvolatile charge trapping center, and furthermore the trapped carrier turns on or off the channel right under the carrier. At the same time, the RAM function is secured. In this constitution, both the writing and reading is extremely easy with reduced number of wiring, thus ensuring production of a high-density memory being collected into the matrix array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1014176A JPS5496379A (en) | 1976-02-02 | 1976-02-02 | Semiconductor memory device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP1014176A JPS5496379A (en) | 1976-02-02 | 1976-02-02 | Semiconductor memory device |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4898771A Division JPS5760781B2 (en) | 1971-07-03 | 1971-07-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5496379A true JPS5496379A (en) | 1979-07-30 |
Family
ID=11741994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP1014176A Pending JPS5496379A (en) | 1976-02-02 | 1976-02-02 | Semiconductor memory device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5496379A (en) |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| US3577210A (en) * | 1969-02-17 | 1971-05-04 | Hughes Aircraft Co | Solid-state storage device |
| JPS4829088A (en) * | 1971-08-19 | 1973-04-17 |
-
1976
- 1976-02-02 JP JP1014176A patent/JPS5496379A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| US3577210A (en) * | 1969-02-17 | 1971-05-04 | Hughes Aircraft Co | Solid-state storage device |
| JPS4829088A (en) * | 1971-08-19 | 1973-04-17 |
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