JPS55146961A - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
JPS55146961A
JPS55146961A JP5349279A JP5349279A JPS55146961A JP S55146961 A JPS55146961 A JP S55146961A JP 5349279 A JP5349279 A JP 5349279A JP 5349279 A JP5349279 A JP 5349279A JP S55146961 A JPS55146961 A JP S55146961A
Authority
JP
Japan
Prior art keywords
layer
film
region
type
sio2
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5349279A
Other languages
Japanese (ja)
Inventor
Akira Endo
Joji Okada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5349279A priority Critical patent/JPS55146961A/en
Publication of JPS55146961A publication Critical patent/JPS55146961A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells

Abstract

PURPOSE:To avoid the reduction of logical level or inversion of informations stored in a memory device, by constructing the memory device with an information charge storage region, bit wire and sense amplifier and making these regions entrap the carriers formed by an irradiation of gamma ray. CONSTITUTION:An n<+>-type layer is formed by an epitaxial growth method on a p- type Si substrate 10, and a p-type layer 12 is formed thereon. A thick SiO2 field film 13 is formed along the periphery of the layer 12 while the central area of the layer 12 surrounded by the field film 13 is covered with a thin gate SiO2 film 14. Then, a fixed voltage line 15 consisting of a low resistance poly-crystal Si is deposited between the surface of the film 13 and an intermediate portion of the layer 14. Only the surface of this line is changed into an SiO2 film 16. A poly-crystal Si layer 17 constituting a gate electrode or a word line is formed to extend over the SiO2 film 16 and the layer 14. A window is formed in the film 14 contacting the other film 13, for forming in the region 12 an n<+>-type region 18 which serves as a source region or a bit line. In this arrangement, a depletion region 19 and a depletion layer DP are formed in the layer 12, so that the carriers produced as a result or irradiation by gamma rat is entrapped by the layer 11.
JP5349279A 1979-05-02 1979-05-02 Semiconductor memory device Pending JPS55146961A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5349279A JPS55146961A (en) 1979-05-02 1979-05-02 Semiconductor memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5349279A JPS55146961A (en) 1979-05-02 1979-05-02 Semiconductor memory device

Related Child Applications (2)

Application Number Title Priority Date Filing Date
JP60099566A Division JPS60258956A (en) 1985-05-13 1985-05-13 Semiconductor memory device
JP60099565A Division JPS60258955A (en) 1985-05-13 1985-05-13 Semiconductor memory device

Publications (1)

Publication Number Publication Date
JPS55146961A true JPS55146961A (en) 1980-11-15

Family

ID=12944328

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5349279A Pending JPS55146961A (en) 1979-05-02 1979-05-02 Semiconductor memory device

Country Status (1)

Country Link
JP (1) JPS55146961A (en)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162258A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor memory device
JPS5694768A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor memory device
JPS5790973A (en) * 1980-11-27 1982-06-05 Nec Corp Semiconductor base body
JPS587860A (en) * 1981-07-06 1983-01-17 Hitachi Ltd Semiconductor memory device
JPS58207641A (en) * 1982-05-28 1983-12-03 Nec Corp Substrate for semiconductor device
JPS6188556A (en) * 1984-10-08 1986-05-06 Nec Corp Semiconductor memory cell
JPS6432670A (en) * 1988-06-15 1989-02-02 Hitachi Ltd Semiconductor memory circuit device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
JPS538082A (en) * 1976-07-10 1978-01-25 Toshiba Corp Production of semiconductor device
JPS54127291A (en) * 1978-03-27 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Mos semiconductor ic device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279787A (en) * 1975-12-26 1977-07-05 Toshiba Corp Integrated circuit device
JPS538082A (en) * 1976-07-10 1978-01-25 Toshiba Corp Production of semiconductor device
JPS54127291A (en) * 1978-03-27 1979-10-03 Cho Lsi Gijutsu Kenkyu Kumiai Mos semiconductor ic device

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55162258A (en) * 1979-06-05 1980-12-17 Fujitsu Ltd Semiconductor memory device
JPS5694768A (en) * 1979-12-28 1981-07-31 Fujitsu Ltd Semiconductor memory device
JPS5790973A (en) * 1980-11-27 1982-06-05 Nec Corp Semiconductor base body
JPS587860A (en) * 1981-07-06 1983-01-17 Hitachi Ltd Semiconductor memory device
JPS58207641A (en) * 1982-05-28 1983-12-03 Nec Corp Substrate for semiconductor device
JPS6188556A (en) * 1984-10-08 1986-05-06 Nec Corp Semiconductor memory cell
JPS6432670A (en) * 1988-06-15 1989-02-02 Hitachi Ltd Semiconductor memory circuit device

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