IT993090B - Memoria a transistori bipolari con immagazzinamento capacitivo - Google Patents
Memoria a transistori bipolari con immagazzinamento capacitivoInfo
- Publication number
- IT993090B IT993090B IT2835373A IT2835373A IT993090B IT 993090 B IT993090 B IT 993090B IT 2835373 A IT2835373 A IT 2835373A IT 2835373 A IT2835373 A IT 2835373A IT 993090 B IT993090 B IT 993090B
- Authority
- IT
- Italy
- Prior art keywords
- bipolar transistor
- capacitive storage
- transistor memory
- capacitive
- memory
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
- G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Static Random-Access Memory (AREA)
- Dram (AREA)
- Logic Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30296372A | 1972-11-01 | 1972-11-01 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| IT993090B true IT993090B (it) | 1975-09-30 |
Family
ID=23169994
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| IT2835373A IT993090B (it) | 1972-11-01 | 1973-08-30 | Memoria a transistori bipolari con immagazzinamento capacitivo |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS546178B2 (it) |
| CA (1) | CA1101992A (it) |
| DE (1) | DE2348065C3 (it) |
| FR (1) | FR2204849B1 (it) |
| GB (1) | GB1379879A (it) |
| IT (1) | IT993090B (it) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3979734A (en) * | 1975-06-16 | 1976-09-07 | International Business Machines Corporation | Multiple element charge storage memory cell |
| JPH0420374U (it) * | 1990-06-13 | 1992-02-20 |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3355720A (en) * | 1964-03-05 | 1967-11-28 | Rca Corp | Memory using charge storage diodes |
| US3387286A (en) * | 1967-07-14 | 1968-06-04 | Ibm | Field-effect transistor memory |
| US3614753A (en) * | 1969-11-10 | 1971-10-19 | Shell Oil Co | Single-rail solid-state memory with capacitive storage |
| US3697962A (en) * | 1970-11-27 | 1972-10-10 | Ibm | Two device monolithic bipolar memory array |
| GB1330155A (en) * | 1970-12-17 | 1973-09-12 | Ferranti Ltd | Semiconductor information storage devices |
-
1973
- 1973-08-30 IT IT2835373A patent/IT993090B/it active
- 1973-09-19 FR FR7334205A patent/FR2204849B1/fr not_active Expired
- 1973-09-25 DE DE19732348065 patent/DE2348065C3/de not_active Expired
- 1973-10-01 GB GB4575373A patent/GB1379879A/en not_active Expired
- 1973-10-05 JP JP11155773A patent/JPS546178B2/ja not_active Expired
- 1973-10-15 CA CA183,363A patent/CA1101992A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2204849A1 (it) | 1974-05-24 |
| JPS546178B2 (it) | 1979-03-26 |
| JPS4979133A (it) | 1974-07-31 |
| DE2348065A1 (de) | 1974-05-09 |
| DE2348065B2 (de) | 1981-07-09 |
| FR2204849B1 (it) | 1976-06-18 |
| GB1379879A (en) | 1975-01-08 |
| CA1101992A (en) | 1981-05-26 |
| DE2348065C3 (de) | 1982-03-18 |
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