CH518610A - Assoziativspeicherzelle - Google Patents

Assoziativspeicherzelle

Info

Publication number
CH518610A
CH518610A CH495371A CH495371A CH518610A CH 518610 A CH518610 A CH 518610A CH 495371 A CH495371 A CH 495371A CH 495371 A CH495371 A CH 495371A CH 518610 A CH518610 A CH 518610A
Authority
CH
Switzerland
Prior art keywords
memory cell
associative memory
associative
cell
memory
Prior art date
Application number
CH495371A
Other languages
English (en)
Inventor
Helmut Lohrey Fred
Kurt Wiedmann Siegfried
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Publication of CH518610A publication Critical patent/CH518610A/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/037—Diffusion-deposition
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/085—Isolated-integrated
CH495371A 1970-04-20 1971-04-05 Assoziativspeicherzelle CH518610A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2997570A 1970-04-20 1970-04-20

Publications (1)

Publication Number Publication Date
CH518610A true CH518610A (de) 1972-01-31

Family

ID=21851872

Family Applications (1)

Application Number Title Priority Date Filing Date
CH495371A CH518610A (de) 1970-04-20 1971-04-05 Assoziativspeicherzelle

Country Status (9)

Country Link
US (1) US3643231A (de)
JP (1) JPS4937295B1 (de)
BE (1) BE763399R (de)
CA (1) CA932460A (de)
CH (1) CH518610A (de)
DE (1) DE2116107A1 (de)
GB (1) GB1281808A (de)
NL (1) NL7105102A (de)
SE (1) SE376319B (de)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3815106A (en) * 1972-05-11 1974-06-04 S Wiedmann Flip-flop memory cell arrangement
US3703709A (en) * 1969-05-24 1972-11-21 Nippon Electric Co High speed associative memory circuits
US3764833A (en) * 1970-09-22 1973-10-09 Ibm Monolithic memory system with bi-level powering for reduced power consumption
NL163338C (nl) * 1972-03-25 1980-08-15 Philips Nv Elektronische schakeling.
DE2926050C2 (de) * 1979-06-28 1981-10-01 Ibm Deutschland Gmbh, 7000 Stuttgart Verfahren und Schaltungsanordnung zum Lesen Und/oder Schreiben eines integrierten Halbleiterspeichers mit Speicherzellen in MTL-Technik
DE2943565C2 (de) * 1979-10-29 1981-11-12 Ibm Deutschland Gmbh, 7000 Stuttgart Speicherzellennachbildung zur Referenzspannungserzeugung für Halbleiterspeicher in MTL-Technik
FR2469049A1 (fr) * 1979-10-30 1981-05-08 Ibm France Circuit comportant au moins deux dispositifs semi-conducteurs en technologie mtl presentant des temps de montee differents et circuits logiques en derivant
DE2944141A1 (de) * 1979-11-02 1981-05-14 Ibm Deutschland Gmbh, 7000 Stuttgart Monolithisch integrierte speicheranordnung
US5021856A (en) * 1989-03-15 1991-06-04 Plessey Overseas Limited Universal cell for bipolar NPN and PNP transistors and resistive elements
US5579440A (en) * 1993-11-22 1996-11-26 Brown; Robert A. Machine that learns what it actually does
KR20190075341A (ko) * 2017-12-21 2019-07-01 에스케이하이닉스 주식회사 반도체 메모리 장치

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3423737A (en) * 1965-06-21 1969-01-21 Ibm Nondestructive read transistor memory cell
US3551899A (en) * 1967-11-28 1970-12-29 Nippon Electric Co Associative memory employing bistable circuits as memory cells
US3548386A (en) * 1968-07-15 1970-12-15 Ibm Associative memory

Also Published As

Publication number Publication date
JPS4937295B1 (de) 1974-10-08
GB1281808A (en) 1972-07-19
US3643231A (en) 1972-02-15
SE376319B (de) 1975-05-12
DE2116107A1 (de) 1971-11-04
NL7105102A (de) 1971-10-22
CA932460A (en) 1973-08-21
BE763399R (fr) 1971-07-16

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Legal Events

Date Code Title Description
PL Patent ceased