IT991502B - Dispositivo di memoria - Google Patents

Dispositivo di memoria

Info

Publication number
IT991502B
IT991502B IT67336/71A IT6733671A IT991502B IT 991502 B IT991502 B IT 991502B IT 67336/71 A IT67336/71 A IT 67336/71A IT 6733671 A IT6733671 A IT 6733671A IT 991502 B IT991502 B IT 991502B
Authority
IT
Italy
Prior art keywords
memory device
memory
Prior art date
Application number
IT67336/71A
Other languages
English (en)
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB37782/70A external-priority patent/GB1260777A/en
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Application granted granted Critical
Publication of IT991502B publication Critical patent/IT991502B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C15/00—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04—Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356026—Bistable circuits using additional transistors in the input circuit with synchronous operation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356017—Bistable circuits using additional transistors in the input circuit
    • H03K3/356052—Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606—Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation
IT67336/71A 1970-08-05 1971-02-01 Dispositivo di memoria IT991502B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB37782/70A GB1260777A (en) 1969-08-18 1970-08-05 Improvements in or relating to memory cells

Publications (1)

Publication Number Publication Date
IT991502B true IT991502B (it) 1975-08-30

Family

ID=10398965

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67336/71A IT991502B (it) 1970-08-05 1971-02-01 Dispositivo di memoria

Country Status (2)

Country Link
US (1) US3693170A (it)
IT (1) IT991502B (it)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3942160A (en) * 1974-06-03 1976-03-02 Motorola, Inc. Bit sense line speed-up circuit for MOS RAM
US3936810A (en) * 1975-01-20 1976-02-03 Semi, Inc. Sense line balancing circuit
US4070653A (en) * 1976-06-29 1978-01-24 Texas Instruments Incorporated Random access memory cell with ion implanted resistor element
DE3017700A1 (de) * 1980-05-08 1981-11-12 Siemens AG, 1000 Berlin und 8000 München Monolithisch integrierbare digitale komparatorschaltung
US4404653A (en) * 1981-10-01 1983-09-13 Yeda Research & Development Co. Ltd. Associative memory cell and memory unit including same
US4813002A (en) * 1986-07-21 1989-03-14 Honeywell Bull Inc. High speed high density dynamic address translator
US7408800B1 (en) * 2007-05-03 2008-08-05 International Business Machines Corporation Apparatus and method for improved SRAM device performance through double gate topology
US20080273366A1 (en) * 2007-05-03 2008-11-06 International Business Machines Corporation Design structure for improved sram device performance through double gate topology

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3275996A (en) * 1965-12-30 1966-09-27 Rca Corp Driver-sense circuit arrangement
US3518635A (en) * 1967-08-22 1970-06-30 Bunker Ramo Digital memory apparatus
US3548389A (en) * 1968-12-31 1970-12-15 Honeywell Inc Transistor associative memory cell

Also Published As

Publication number Publication date
US3693170A (en) 1972-09-19

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