GB1260777A - Improvements in or relating to memory cells - Google Patents

Improvements in or relating to memory cells

Info

Publication number
GB1260777A
GB1260777A GB37782/70A GB3778270A GB1260777A GB 1260777 A GB1260777 A GB 1260777A GB 37782/70 A GB37782/70 A GB 37782/70A GB 3778270 A GB3778270 A GB 3778270A GB 1260777 A GB1260777 A GB 1260777A
Authority
GB
United Kingdom
Prior art keywords
fet
parent specification
memory cells
line
relating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB37782/70A
Inventor
Alfred Brian Edwin Ellis
Colin James Shead
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BAE Systems Electronics Ltd
Original Assignee
Marconi Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from GB41076/69A external-priority patent/GB1260426A/en
Application filed by Marconi Co Ltd filed Critical Marconi Co Ltd
Priority to GB37782/70A priority Critical patent/GB1260777A/en
Priority to US89204A priority patent/US3693170A/en
Priority to IT67336/71A priority patent/IT991502B/en
Publication of GB1260777A publication Critical patent/GB1260777A/en
Expired legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C15/00Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores
    • G11C15/04Digital stores in which information comprising one or more characteristic parts is written into the store and in which information is read-out by searching for one or more of these characteristic parts, i.e. associative or content-addressed stores using semiconductor elements
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356017Bistable circuits using additional transistors in the input circuit
    • H03K3/356026Bistable circuits using additional transistors in the input circuit with synchronous operation
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356017Bistable circuits using additional transistors in the input circuit
    • H03K3/356052Bistable circuits using additional transistors in the input circuit using pass gates
    • H03K3/35606Bistable circuits using additional transistors in the input circuit using pass gates with synchronous operation

Abstract

1,260,777. Memory cells. MARCONI CO. Ltd. 5 Aug., 1970, No. 37782/70. Addition to 1,260,426. Heading H3T. [Also in Division G4] In a memory cell as in the parent Specification in which the first and second signal access lines 12, 13 are connectable through FET's 15, 16 to the third line 14, a further selectably low impedance device such as FET 18 is arranged between the FET's 15, 16 and the line 14. Also the "pull down" FET's 8, 9 and 10, 11 are across the loads 4, 5 not the cross-coupled FET's 1, 2. When writing, the FET 18 is kept non-conductive by a Ov gate bias, and the lines 12, 14 or 13, 14 taken negative to set one state or the other. When reading or searching, FET 18 is made conductive by -20V on the gate, and operation continues as described in the parent Specification. Operating voltages are in some cases different from those in the parent Specification.
GB37782/70A 1969-08-18 1970-08-05 Improvements in or relating to memory cells Expired GB1260777A (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB37782/70A GB1260777A (en) 1969-08-18 1970-08-05 Improvements in or relating to memory cells
US89204A US3693170A (en) 1970-08-05 1970-11-13 Memory cells
IT67336/71A IT991502B (en) 1970-08-05 1971-02-01 MEMORY DEVICE

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GB41076/69A GB1260426A (en) 1969-08-18 1969-08-18 Improvements in or relating to memory cells
GB37782/70A GB1260777A (en) 1969-08-18 1970-08-05 Improvements in or relating to memory cells

Publications (1)

Publication Number Publication Date
GB1260777A true GB1260777A (en) 1972-01-19

Family

ID=42245946

Family Applications (1)

Application Number Title Priority Date Filing Date
GB37782/70A Expired GB1260777A (en) 1969-08-18 1970-08-05 Improvements in or relating to memory cells

Country Status (1)

Country Link
GB (1) GB1260777A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442508A (en) * 1981-08-05 1984-04-10 General Instrument Corporation Storage cells for use in two conductor data column storage logic arrays

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4442508A (en) * 1981-08-05 1984-04-10 General Instrument Corporation Storage cells for use in two conductor data column storage logic arrays

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee