AT314228B - Festwertspeicher - Google Patents

Festwertspeicher

Info

Publication number
AT314228B
AT314228B AT361871A AT361871A AT314228B AT 314228 B AT314228 B AT 314228B AT 361871 A AT361871 A AT 361871A AT 361871 A AT361871 A AT 361871A AT 314228 B AT314228 B AT 314228B
Authority
AT
Austria
Prior art keywords
read
memory
Prior art date
Application number
AT361871A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT314228B publication Critical patent/AT314228B/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/06—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using diode elements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/08—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards using semiconductor devices, e.g. bipolar elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/535—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including internal interconnections, e.g. cross-under constructions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B99/00—Subject matter not provided for in other groups of this subclass
    • H10B99/16—Subject matter not provided for in other groups of this subclass comprising memory cells having diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/926—Elongated lead extending axially through another elongated lead

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Memories (AREA)
AT361871A 1970-05-11 1971-04-27 Festwertspeicher AT314228B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2022918A DE2022918C3 (de) 1970-05-11 1970-05-11 Integrierter Halbleiter-Festwertspeicher

Publications (1)

Publication Number Publication Date
AT314228B true AT314228B (de) 1974-03-25

Family

ID=5770767

Family Applications (1)

Application Number Title Priority Date Filing Date
AT361871A AT314228B (de) 1970-05-11 1971-04-27 Festwertspeicher

Country Status (10)

Country Link
US (1) US3774170A (de)
JP (1) JPS578555B1 (de)
AT (1) AT314228B (de)
CA (1) CA958122A (de)
CH (1) CH535473A (de)
DE (1) DE2022918C3 (de)
FR (1) FR2088478B1 (de)
GB (1) GB1345762A (de)
NL (1) NL7106231A (de)
SE (1) SE379878B (de)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3931492A (en) * 1972-06-19 1976-01-06 Nippon Telegraph And Telephone Public Corporation Thermal print head
US4099260A (en) * 1976-09-20 1978-07-04 Bell Telephone Laboratories, Incorporated Bipolar read-only-memory unit having self-isolating bit-lines
DE2835086A1 (de) * 1977-08-16 1979-03-01 Kruschanov Halbleitermatrix eines integrierten konstantspeichers
US5032538A (en) * 1979-08-10 1991-07-16 Massachusetts Institute Of Technology Semiconductor embedded layer technology utilizing selective epitaxial growth methods
EP0196374A1 (de) * 1979-08-10 1986-10-08 Massachusetts Institute Of Technology Eingebettete Schichtentechnologie für Halbleiter
US4419741A (en) * 1980-01-28 1983-12-06 Rca Corporation Read only memory (ROM) having high density memory array with on pitch decoder circuitry
JPS61290343A (ja) * 1985-06-18 1986-12-20 Sumitomo Metal Ind Ltd 水分測定方法及び装置
JPS6212838A (ja) * 1985-07-10 1987-01-21 Kawasaki Steel Corp 粉粒体の水分連続測定装置
EP0599388B1 (de) * 1992-11-20 2000-08-02 Koninklijke Philips Electronics N.V. Halbleitervorrichtung mit einem programmierbaren Element
JP4010091B2 (ja) * 2000-03-23 2007-11-21 セイコーエプソン株式会社 メモリデバイスおよびその製造方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3245051A (en) * 1960-11-16 1966-04-05 John H Robb Information storage matrices
DE1266353B (de) * 1964-03-13 1968-04-18 Bbc Brown Boveri & Cie Matrixfoermige Anordnung von Oxydschichtdioden zur Verwendung als manipulierbarer Festwertspeicher oder Informationsumsetzer
US3377513A (en) * 1966-05-02 1968-04-09 North American Rockwell Integrated circuit diode matrix
US3541543A (en) * 1966-07-25 1970-11-17 Texas Instruments Inc Binary decoder
BE755039A (fr) * 1969-09-15 1971-02-01 Ibm Memoire semi-conductrice permanente
US3691627A (en) * 1970-02-03 1972-09-19 Gen Electric Method of fabricating buried metallic film devices
US3611067A (en) * 1970-04-20 1971-10-05 Fairchild Camera Instr Co Complementary npn/pnp structure for monolithic integrated circuits

Also Published As

Publication number Publication date
CA958122A (en) 1974-11-19
SE379878B (de) 1975-10-20
DE2022918A1 (de) 1971-11-25
US3774170A (en) 1973-11-20
DE2022918C3 (de) 1979-02-22
CH535473A (de) 1973-03-31
FR2088478B1 (de) 1976-05-28
JPS578555B1 (de) 1982-02-17
NL7106231A (de) 1971-11-15
DE2022918B2 (de) 1978-06-22
FR2088478A1 (de) 1972-01-07
GB1345762A (en) 1974-02-06

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee