JPH10247386A - 昇圧電位供給回路及び半導体記憶装置 - Google Patents

昇圧電位供給回路及び半導体記憶装置

Info

Publication number
JPH10247386A
JPH10247386A JP4790997A JP4790997A JPH10247386A JP H10247386 A JPH10247386 A JP H10247386A JP 4790997 A JP4790997 A JP 4790997A JP 4790997 A JP4790997 A JP 4790997A JP H10247386 A JPH10247386 A JP H10247386A
Authority
JP
Japan
Prior art keywords
potential
power supply
boosted
boosted potential
state
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4790997A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10247386A5 (enExample
Inventor
Shigeki Tomishima
茂樹 冨嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP4790997A priority Critical patent/JPH10247386A/ja
Priority to US08/874,351 priority patent/US5909141A/en
Publication of JPH10247386A publication Critical patent/JPH10247386A/ja
Publication of JPH10247386A5 publication Critical patent/JPH10247386A5/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/143—Detection of memory cassette insertion or removal; Continuity checks of supply or ground lines; Detection of supply variations, interruptions or levels ; Switching between alternative supplies
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4074—Power supply or voltage generation circuits, e.g. bias voltage generators, substrate voltage generators, back-up power, power control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/145—Applications of charge pumps; Boosted voltage circuits; Clamp circuits therefor
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of DC power input into DC power output
    • H02M3/02—Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
  • Static Random-Access Memory (AREA)
JP4790997A 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置 Pending JPH10247386A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4790997A JPH10247386A (ja) 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置
US08/874,351 US5909141A (en) 1997-03-03 1997-06-13 Step-up potential supply circuit and semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4790997A JPH10247386A (ja) 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH10247386A true JPH10247386A (ja) 1998-09-14
JPH10247386A5 JPH10247386A5 (enExample) 2005-01-06

Family

ID=12788512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4790997A Pending JPH10247386A (ja) 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置

Country Status (2)

Country Link
US (1) US5909141A (enExample)
JP (1) JPH10247386A (enExample)

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6734717B2 (en) 2001-12-29 2004-05-11 Hynix Semiconductor Inc. Charge pump circuit
US6774708B2 (en) 2001-09-27 2004-08-10 Oki Electric Industry Co., Ltd. Voltage boosting circuit with two main charge pumps
KR100507701B1 (ko) * 2001-12-06 2005-08-09 주식회사 하이닉스반도체 부스트랩 회로
US7428169B2 (en) 2004-12-20 2008-09-23 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device and voltage generating circuit for the same
JP2010226953A (ja) * 1999-12-02 2010-10-07 Hynix Semiconductor Inc 半導体メモリ素子用高電圧発生器
JP2011175712A (ja) * 2010-02-25 2011-09-08 Toshiba Corp 半導体記憶装置
JP2014003241A (ja) * 2012-06-20 2014-01-09 Fujitsu Ltd 基板電位検出回路、半導体集積回路及び基板電位検出回路の較正方法
WO2020047237A1 (en) * 2018-08-31 2020-03-05 Micron Technology, Inc. Capacitive voltage modifier for power management
US10803963B2 (en) 2018-08-31 2020-10-13 Micron Technology, Inc. Capacitive voltage divider for power management
JP2022536044A (ja) * 2019-05-29 2022-08-12 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリビットセルの電圧調整システム

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002501654A (ja) 1997-05-30 2002-01-15 ミクロン テクノロジー，インコーポレイテッド ２５６Ｍｅｇダイナミックランダムアクセスメモリ
KR100243295B1 (ko) * 1997-06-26 2000-02-01 윤종용 반도체장치의 백 바이어스 발생기 및 그 발생방법
KR100271840B1 (ko) * 1997-08-27 2000-11-15 다니구찌 이찌로오 회로 면적의 증대를 억제하면서 복수의 전위를 출력할 수 있는내부 전위 발생 회로
JP2000112547A (ja) * 1998-10-05 2000-04-21 Mitsubishi Electric Corp 基板電圧発生回路および半導体集積回路装置
KR100293637B1 (ko) * 1998-10-27 2001-07-12 박종섭 드레인 전압 펌핑 회로
JP2000331490A (ja) * 1999-05-18 2000-11-30 Hitachi Ltd 半導体集積回路装置
JP4242006B2 (ja) * 1999-06-23 2009-03-18 株式会社ルネサステクノロジ チャージポンプ回路およびそれを用いた不揮発性半導体記憶装置
KR100308502B1 (ko) * 1999-06-29 2001-11-01 박종섭 고전압 발생장치
JP2001126477A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体集積回路
JP2001145335A (ja) * 1999-11-11 2001-05-25 Nec Corp 昇圧回路
JP2001297583A (ja) * 2000-04-13 2001-10-26 Mitsubishi Electric Corp 半導体記憶装置
KR100351054B1 (ko) * 2000-06-13 2002-09-05 삼성전자 주식회사 승압 전압 레벨 안정화 회로를 구비한 반도체 메모리장치
JP4786015B2 (ja) * 2000-07-04 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置
JP2002032987A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 内部電圧発生回路
US6501817B2 (en) 2000-08-25 2002-12-31 United Memories, Inc. Area efficient redundancy multiplexer circuit technique for integrated circuit devices providing significantly reduced parasitic capacitance
US6369642B1 (en) * 2000-12-26 2002-04-09 Intel Corporation Output switch for charge pump reconfiguration
TWI293464B (en) * 2003-07-08 2008-02-11 Winbond Electronics Corp Two phase internal voltage generator
FR2858725B1 (fr) * 2003-08-06 2005-10-07 St Microelectronics Sa Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.
JP4405216B2 (ja) * 2003-09-16 2010-01-27 株式会社ルネサステクノロジ 半導体装置
US7256642B2 (en) * 2004-03-19 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Booster circuit, semiconductor device, and electronic apparatus
US7154785B2 (en) * 2004-06-25 2006-12-26 Micron Technology, Inc. Charge pump circuitry having adjustable current outputs
TWI273365B (en) * 2004-08-17 2007-02-11 Amic Technology Corp Boost circuit with a voltage detector
US7224207B2 (en) * 2005-09-20 2007-05-29 Taiwan Semiconductor Manufacturing Co. Charge pump system with smooth voltage output
KR100727411B1 (ko) * 2005-12-29 2007-06-13 삼성전자주식회사 오픈 비트라인 구조의 메모리 셀 어레이를 가지는 반도체메모리 장치의 승압전압 발생회로 및 승압전압 발생방법
ITVA20060011A1 (it) * 2006-02-22 2007-08-23 St Microelectronics Srl Dispositivo di memoria e relativo metodo di controllo
JP4873552B2 (ja) * 2006-10-20 2012-02-08 ルネサスエレクトロニクス株式会社 昇圧電源回路
US7477093B2 (en) * 2006-12-31 2009-01-13 Sandisk 3D Llc Multiple polarity reversible charge pump circuit
KR101003140B1 (ko) * 2009-03-20 2010-12-21 주식회사 하이닉스반도체 내부 전원 발생 장치와 그의 제어 방법
US8406075B2 (en) * 2009-04-03 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-low leakage memory architecture
US7969232B2 (en) * 2009-08-31 2011-06-28 Himax Technologies Limited Booster and voltage detection method thereof
KR20120078857A (ko) * 2011-01-03 2012-07-11 에스케이하이닉스 주식회사 전압 생성 방법 및 장치
TWI669714B (zh) * 2018-05-29 2019-08-21 力旺電子股份有限公司 電壓控制裝置及記憶體系統

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2947482B2 (ja) * 1989-11-09 1999-09-13 三菱電機株式会社 基板バイアス電圧発生回路
JPH05189961A (ja) * 1992-01-17 1993-07-30 Hitachi Ltd 半導体記憶装置
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010226953A (ja) * 1999-12-02 2010-10-07 Hynix Semiconductor Inc 半導体メモリ素子用高電圧発生器
US6774708B2 (en) 2001-09-27 2004-08-10 Oki Electric Industry Co., Ltd. Voltage boosting circuit with two main charge pumps
KR100507701B1 (ko) * 2001-12-06 2005-08-09 주식회사 하이닉스반도체 부스트랩 회로
US6734717B2 (en) 2001-12-29 2004-05-11 Hynix Semiconductor Inc. Charge pump circuit
US7428169B2 (en) 2004-12-20 2008-09-23 Samsung Electronics Co., Ltd. Nonvolatile semiconductor memory device and voltage generating circuit for the same
US8331158B2 (en) 2010-02-25 2012-12-11 Kabushiki Kaisha Toshiba Semiconductor memory device
JP2011175712A (ja) * 2010-02-25 2011-09-08 Toshiba Corp 半導体記憶装置
JP2014003241A (ja) * 2012-06-20 2014-01-09 Fujitsu Ltd 基板電位検出回路、半導体集積回路及び基板電位検出回路の較正方法
WO2020047237A1 (en) * 2018-08-31 2020-03-05 Micron Technology, Inc. Capacitive voltage modifier for power management
US10803963B2 (en) 2018-08-31 2020-10-13 Micron Technology, Inc. Capacitive voltage divider for power management
US10861567B2 (en) 2018-08-31 2020-12-08 Micron Technology, Inc. Capacitive voltage modifier for power management
TWI724524B (zh) * 2018-08-31 2021-04-11 美商美光科技公司 記憶體子系統及用於記憶體子系統之功率管理之方法
US11367490B2 (en) 2018-08-31 2022-06-21 Micron Technology, Inc. Capacitive voltage modifier for power management
JP2022536044A (ja) * 2019-05-29 2022-08-12 アドバンスト・マイクロ・ディバイシズ・インコーポレイテッド メモリビットセルの電圧調整システム

Also Published As

Publication number Publication date
US5909141A (en) 1999-06-01

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