JPH10247386A5 - - Google Patents

Info

Publication number
JPH10247386A5
JPH10247386A5 JP1997047909A JP4790997A JPH10247386A5 JP H10247386 A5 JPH10247386 A5 JP H10247386A5 JP 1997047909 A JP1997047909 A JP 1997047909A JP 4790997 A JP4790997 A JP 4790997A JP H10247386 A5 JPH10247386 A5 JP H10247386A5
Authority
JP
Japan
Prior art keywords
potential
node
boosted potential
boosted
level
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997047909A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10247386A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP4790997A priority Critical patent/JPH10247386A/ja
Priority claimed from JP4790997A external-priority patent/JPH10247386A/ja
Priority to US08/874,351 priority patent/US5909141A/en
Publication of JPH10247386A publication Critical patent/JPH10247386A/ja
Publication of JPH10247386A5 publication Critical patent/JPH10247386A5/ja
Pending legal-status Critical Current

Links

JP4790997A 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置 Pending JPH10247386A (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP4790997A JPH10247386A (ja) 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置
US08/874,351 US5909141A (en) 1997-03-03 1997-06-13 Step-up potential supply circuit and semiconductor storage device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4790997A JPH10247386A (ja) 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置

Publications (2)

Publication Number Publication Date
JPH10247386A JPH10247386A (ja) 1998-09-14
JPH10247386A5 true JPH10247386A5 (enExample) 2005-01-06

Family

ID=12788512

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4790997A Pending JPH10247386A (ja) 1997-03-03 1997-03-03 昇圧電位供給回路及び半導体記憶装置

Country Status (2)

Country Link
US (1) US5909141A (enExample)
JP (1) JPH10247386A (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002501654A (ja) 1997-05-30 2002-01-15 ミクロン テクノロジー，インコーポレイテッド ２５６Ｍｅｇダイナミックランダムアクセスメモリ
KR100243295B1 (ko) * 1997-06-26 2000-02-01 윤종용 반도체장치의 백 바이어스 발생기 및 그 발생방법
KR100271840B1 (ko) * 1997-08-27 2000-11-15 다니구찌 이찌로오 회로 면적의 증대를 억제하면서 복수의 전위를 출력할 수 있는내부 전위 발생 회로
JP2000112547A (ja) * 1998-10-05 2000-04-21 Mitsubishi Electric Corp 基板電圧発生回路および半導体集積回路装置
KR100293637B1 (ko) * 1998-10-27 2001-07-12 박종섭 드레인 전압 펌핑 회로
JP2000331490A (ja) * 1999-05-18 2000-11-30 Hitachi Ltd 半導体集積回路装置
JP4242006B2 (ja) * 1999-06-23 2009-03-18 株式会社ルネサステクノロジ チャージポンプ回路およびそれを用いた不揮発性半導体記憶装置
KR100308502B1 (ko) * 1999-06-29 2001-11-01 박종섭 고전압 발생장치
JP2001126477A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体集積回路
JP2001145335A (ja) * 1999-11-11 2001-05-25 Nec Corp 昇圧回路
KR100340866B1 (ko) * 1999-12-02 2002-06-20 박종섭 고전위 발생 장치
JP2001297583A (ja) * 2000-04-13 2001-10-26 Mitsubishi Electric Corp 半導体記憶装置
KR100351054B1 (ko) * 2000-06-13 2002-09-05 삼성전자 주식회사 승압 전압 레벨 안정화 회로를 구비한 반도체 메모리장치
JP4786015B2 (ja) * 2000-07-04 2011-10-05 ルネサスエレクトロニクス株式会社 半導体装置
JP2002032987A (ja) * 2000-07-18 2002-01-31 Mitsubishi Electric Corp 内部電圧発生回路
US6501817B2 (en) 2000-08-25 2002-12-31 United Memories, Inc. Area efficient redundancy multiplexer circuit technique for integrated circuit devices providing significantly reduced parasitic capacitance
US6369642B1 (en) * 2000-12-26 2002-04-09 Intel Corporation Output switch for charge pump reconfiguration
JP4834261B2 (ja) 2001-09-27 2011-12-14 Ｏｋｉセミコンダクタ株式会社 昇圧電源発生回路
KR100507701B1 (ko) * 2001-12-06 2005-08-09 주식회사 하이닉스반도체 부스트랩 회로
KR100404001B1 (ko) 2001-12-29 2003-11-05 주식회사 하이닉스반도체 차지 펌프 회로
TWI293464B (en) * 2003-07-08 2008-02-11 Winbond Electronics Corp Two phase internal voltage generator
FR2858725B1 (fr) * 2003-08-06 2005-10-07 St Microelectronics Sa Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.
JP4405216B2 (ja) * 2003-09-16 2010-01-27 株式会社ルネサステクノロジ 半導体装置
US7256642B2 (en) * 2004-03-19 2007-08-14 Semiconductor Energy Laboratory Co., Ltd. Booster circuit, semiconductor device, and electronic apparatus
US7154785B2 (en) * 2004-06-25 2006-12-26 Micron Technology, Inc. Charge pump circuitry having adjustable current outputs
TWI273365B (en) * 2004-08-17 2007-02-11 Amic Technology Corp Boost circuit with a voltage detector
KR100591773B1 (ko) 2004-12-20 2006-06-26 삼성전자주식회사 불휘발성 반도체 메모리 장치 및 그것을 위한 전압 발생회로
US7224207B2 (en) * 2005-09-20 2007-05-29 Taiwan Semiconductor Manufacturing Co. Charge pump system with smooth voltage output
KR100727411B1 (ko) * 2005-12-29 2007-06-13 삼성전자주식회사 오픈 비트라인 구조의 메모리 셀 어레이를 가지는 반도체메모리 장치의 승압전압 발생회로 및 승압전압 발생방법
ITVA20060011A1 (it) * 2006-02-22 2007-08-23 St Microelectronics Srl Dispositivo di memoria e relativo metodo di controllo
JP4873552B2 (ja) * 2006-10-20 2012-02-08 ルネサスエレクトロニクス株式会社 昇圧電源回路
US7477093B2 (en) * 2006-12-31 2009-01-13 Sandisk 3D Llc Multiple polarity reversible charge pump circuit
KR101003140B1 (ko) * 2009-03-20 2010-12-21 주식회사 하이닉스반도체 내부 전원 발생 장치와 그의 제어 방법
US8406075B2 (en) * 2009-04-03 2013-03-26 Taiwan Semiconductor Manufacturing Company, Ltd. Ultra-low leakage memory architecture
US7969232B2 (en) * 2009-08-31 2011-06-28 Himax Technologies Limited Booster and voltage detection method thereof
JP2011175712A (ja) 2010-02-25 2011-09-08 Toshiba Corp 半導体記憶装置
KR20120078857A (ko) * 2011-01-03 2012-07-11 에스케이하이닉스 주식회사 전압 생성 방법 및 장치
JP5978797B2 (ja) * 2012-06-20 2016-08-24 富士通株式会社 基板電位検出回路、半導体集積回路及び基板電位検出回路の較正方法
TWI669714B (zh) * 2018-05-29 2019-08-21 力旺電子股份有限公司 電壓控制裝置及記憶體系統
US10482979B1 (en) * 2018-08-31 2019-11-19 Micron Technology, Inc. Capacitive voltage modifier for power management
US10453541B1 (en) 2018-08-31 2019-10-22 Micron Technology, Inc. Capacitive voltage divider for power management
US10714152B1 (en) * 2019-05-29 2020-07-14 Advanced Micro Devices, Inc. Voltage regulation system for memory bit cells

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2947482B2 (ja) * 1989-11-09 1999-09-13 三菱電機株式会社 基板バイアス電圧発生回路
JPH05189961A (ja) * 1992-01-17 1993-07-30 Hitachi Ltd 半導体記憶装置
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump

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