FR2858725B1 - Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension. - Google Patents

Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.

Info

Publication number
FR2858725B1
FR2858725B1 FR0309680A FR0309680A FR2858725B1 FR 2858725 B1 FR2858725 B1 FR 2858725B1 FR 0309680 A FR0309680 A FR 0309680A FR 0309680 A FR0309680 A FR 0309680A FR 2858725 B1 FR2858725 B1 FR 2858725B1
Authority
FR
France
Prior art keywords
generating
high voltage
repairing
self
portable device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
FR0309680A
Other languages
English (en)
Other versions
FR2858725A1 (fr
Inventor
Francois Tailliet
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SA
Original Assignee
STMicroelectronics SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by STMicroelectronics SA filed Critical STMicroelectronics SA
Priority to FR0309680A priority Critical patent/FR2858725B1/fr
Priority to US10/911,409 priority patent/US7239192B2/en
Publication of FR2858725A1 publication Critical patent/FR2858725A1/fr
Application granted granted Critical
Publication of FR2858725B1 publication Critical patent/FR2858725B1/fr
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)
FR0309680A 2003-08-06 2003-08-06 Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension. Expired - Fee Related FR2858725B1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
FR0309680A FR2858725B1 (fr) 2003-08-06 2003-08-06 Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.
US10/911,409 US7239192B2 (en) 2003-08-06 2004-08-04 Self-reparable device to generate a high voltage, and method for repairing a device to generate a high voltage

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0309680A FR2858725B1 (fr) 2003-08-06 2003-08-06 Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.

Publications (2)

Publication Number Publication Date
FR2858725A1 FR2858725A1 (fr) 2005-02-11
FR2858725B1 true FR2858725B1 (fr) 2005-10-07

Family

ID=34073047

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0309680A Expired - Fee Related FR2858725B1 (fr) 2003-08-06 2003-08-06 Dispositif autoreparable pour generer une haute tension, et procede de reparation d'un dispositif pour generer une haute tension.

Country Status (2)

Country Link
US (1) US7239192B2 (fr)
FR (1) FR2858725B1 (fr)

Families Citing this family (42)

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JP4707485B2 (ja) * 2005-07-14 2011-06-22 パナソニック株式会社 チャージポンプ回路
KR100729353B1 (ko) * 2005-11-22 2007-06-15 삼성전자주식회사 통합된 레귤레이터/펌프 구조를 갖는 플래시 메모리 장치
US8044705B2 (en) 2007-08-28 2011-10-25 Sandisk Technologies Inc. Bottom plate regulation of charge pumps
US7586363B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Diode connected regulation of charge pumps
US7586362B2 (en) * 2007-12-12 2009-09-08 Sandisk Corporation Low voltage charge pump with regulation
US7969235B2 (en) 2008-06-09 2011-06-28 Sandisk Corporation Self-adaptive multi-stage charge pump
US20090302930A1 (en) * 2008-06-09 2009-12-10 Feng Pan Charge Pump with Vt Cancellation Through Parallel Structure
US8710907B2 (en) 2008-06-24 2014-04-29 Sandisk Technologies Inc. Clock generator circuit for a charge pump
US7683700B2 (en) 2008-06-25 2010-03-23 Sandisk Corporation Techniques of ripple reduction for charge pumps
FR2938109A1 (fr) 2008-11-05 2010-05-07 St Microelectronics Rousset Memoire eeprom protegee contre les effets de claquage de transistors mos
US7795952B2 (en) * 2008-12-17 2010-09-14 Sandisk Corporation Regulation of recovery rates in charge pumps
JP4911733B2 (ja) * 2009-03-13 2012-04-04 オムロン株式会社 電力変換装置、パワーコンディショナ、および発電システム
JP4888817B2 (ja) * 2009-03-13 2012-02-29 オムロン株式会社 パワーコンディショナおよび太陽光発電システム
US7973592B2 (en) * 2009-07-21 2011-07-05 Sandisk Corporation Charge pump with current based regulation
US8339183B2 (en) 2009-07-24 2012-12-25 Sandisk Technologies Inc. Charge pump with reduced energy consumption through charge sharing and clock boosting suitable for high voltage word line in flash memories
JP5071498B2 (ja) * 2010-03-10 2012-11-14 オムロン株式会社 電力変換装置およびパワーコンディショナ
US8339185B2 (en) 2010-12-20 2012-12-25 Sandisk 3D Llc Charge pump system that dynamically selects number of active stages
US8294509B2 (en) 2010-12-20 2012-10-23 Sandisk Technologies Inc. Charge pump systems with reduction in inefficiencies due to charge sharing between capacitances
KR20120078857A (ko) * 2011-01-03 2012-07-11 에스케이하이닉스 주식회사 전압 생성 방법 및 장치
FR2976724B1 (fr) * 2011-06-16 2013-07-12 Nanotec Solution Dispositif pour generer une difference de tension alternative entre des potentiels de reference de systemes electroniques.
US8699247B2 (en) 2011-09-09 2014-04-15 Sandisk Technologies Inc. Charge pump system dynamically reconfigurable for read and program
US8400212B1 (en) 2011-09-22 2013-03-19 Sandisk Technologies Inc. High voltage charge pump regulation system with fine step adjustment
US8514628B2 (en) 2011-09-22 2013-08-20 Sandisk Technologies Inc. Dynamic switching approach to reduce area and power consumption of high voltage charge pumps
US8710909B2 (en) 2012-09-14 2014-04-29 Sandisk Technologies Inc. Circuits for prevention of reverse leakage in Vth-cancellation charge pumps
US8836412B2 (en) 2013-02-11 2014-09-16 Sandisk 3D Llc Charge pump with a power-controlled clock buffer to reduce power consumption and output voltage ripple
US8981835B2 (en) 2013-06-18 2015-03-17 Sandisk Technologies Inc. Efficient voltage doubler
US9024680B2 (en) 2013-06-24 2015-05-05 Sandisk Technologies Inc. Efficiency for charge pumps with low supply voltages
US9077238B2 (en) 2013-06-25 2015-07-07 SanDisk Technologies, Inc. Capacitive regulation of charge pumps without refresh operation interruption
US9007046B2 (en) 2013-06-27 2015-04-14 Sandisk Technologies Inc. Efficient high voltage bias regulation circuit
US9083231B2 (en) 2013-09-30 2015-07-14 Sandisk Technologies Inc. Amplitude modulation for pass gate to improve charge pump efficiency
US9154027B2 (en) 2013-12-09 2015-10-06 Sandisk Technologies Inc. Dynamic load matching charge pump for reduced current consumption
JP6366433B2 (ja) * 2014-09-03 2018-08-01 ルネサスエレクトロニクス株式会社 半導体装置
JP6379946B2 (ja) * 2014-09-30 2018-08-29 ブラザー工業株式会社 液体吐出装置
JP6379945B2 (ja) * 2014-09-30 2018-08-29 ブラザー工業株式会社 液体吐出装置
JP6379944B2 (ja) * 2014-09-30 2018-08-29 ブラザー工業株式会社 液体吐出装置
US9917507B2 (en) 2015-05-28 2018-03-13 Sandisk Technologies Llc Dynamic clock period modulation scheme for variable charge pump load currents
US9647536B2 (en) 2015-07-28 2017-05-09 Sandisk Technologies Llc High voltage generation using low voltage devices
US9520776B1 (en) 2015-09-18 2016-12-13 Sandisk Technologies Llc Selective body bias for charge pump transfer switches
US10120520B2 (en) 2016-07-29 2018-11-06 Apple Inc. Touch sensor panel with multi-power domain chip configuration
WO2019067268A1 (fr) 2017-09-29 2019-04-04 Apple Inc. Dispositif de commande tactile multimodal
WO2019067267A1 (fr) 2017-09-29 2019-04-04 Apple Inc. Détection tactile à multiples domaines de puissance
US11016616B2 (en) 2018-09-28 2021-05-25 Apple Inc. Multi-domain touch sensing with touch and display circuitry operable in guarded power domain

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5602794A (en) * 1995-09-29 1997-02-11 Intel Corporation Variable stage charge pump
JPH10247386A (ja) * 1997-03-03 1998-09-14 Mitsubishi Electric Corp 昇圧電位供給回路及び半導体記憶装置
FR2782421B1 (fr) * 1998-08-11 2000-09-15 St Microelectronics Sa Dispositif de generation d'une haute tension
KR100293637B1 (ko) * 1998-10-27 2001-07-12 박종섭 드레인 전압 펌핑 회로
JP3639189B2 (ja) * 2000-06-22 2005-04-20 株式会社デンソー 負荷駆動回路

Also Published As

Publication number Publication date
US7239192B2 (en) 2007-07-03
FR2858725A1 (fr) 2005-02-11
US20050030683A1 (en) 2005-02-10

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Effective date: 20090430