JPH10229048A5 - - Google Patents

Info

Publication number
JPH10229048A5
JPH10229048A5 JP1997048488A JP4848897A JPH10229048A5 JP H10229048 A5 JPH10229048 A5 JP H10229048A5 JP 1997048488 A JP1997048488 A JP 1997048488A JP 4848897 A JP4848897 A JP 4848897A JP H10229048 A5 JPH10229048 A5 JP H10229048A5
Authority
JP
Japan
Prior art keywords
silicon film
crystalline silicon
mask
forming
metal element
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997048488A
Other languages
English (en)
Japanese (ja)
Other versions
JP3976828B2 (ja
JPH10229048A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from JP04848897A external-priority patent/JP3976828B2/ja
Priority to JP04848897A priority Critical patent/JP3976828B2/ja
Priority to KR1019980004710A priority patent/KR100513143B1/ko
Priority to US09/025,586 priority patent/US6420246B1/en
Publication of JPH10229048A publication Critical patent/JPH10229048A/ja
Priority to US10/114,172 priority patent/US6949418B2/en
Publication of JPH10229048A5 publication Critical patent/JPH10229048A5/ja
Priority to KR1020050019007A priority patent/KR100569050B1/ko
Priority to US11/187,845 priority patent/US7186597B2/en
Priority to US11/680,660 priority patent/US7374978B2/en
Publication of JP3976828B2 publication Critical patent/JP3976828B2/ja
Application granted granted Critical
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP04848897A 1997-02-17 1997-02-17 結晶性珪素膜の作製方法 Expired - Fee Related JP3976828B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP04848897A JP3976828B2 (ja) 1997-02-17 1997-02-17 結晶性珪素膜の作製方法
KR1019980004710A KR100513143B1 (ko) 1997-02-17 1998-02-17 트랜지스터제작방법
US09/025,586 US6420246B1 (en) 1997-02-17 1998-02-17 Method of gettering a metal element for accelerating crystallization of silicon by phosphorous
US10/114,172 US6949418B2 (en) 1997-02-17 2002-04-01 Method of manufacturing semiconductor device
KR1020050019007A KR100569050B1 (ko) 1997-02-17 2005-03-08 트랜지스터 제작방법
US11/187,845 US7186597B2 (en) 1997-02-17 2005-07-25 Method of manufacturing transistors
US11/680,660 US7374978B2 (en) 1997-02-17 2007-03-01 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04848897A JP3976828B2 (ja) 1997-02-17 1997-02-17 結晶性珪素膜の作製方法

Publications (3)

Publication Number Publication Date
JPH10229048A JPH10229048A (ja) 1998-08-25
JPH10229048A5 true JPH10229048A5 (enExample) 2004-12-16
JP3976828B2 JP3976828B2 (ja) 2007-09-19

Family

ID=12804783

Family Applications (1)

Application Number Title Priority Date Filing Date
JP04848897A Expired - Fee Related JP3976828B2 (ja) 1997-02-17 1997-02-17 結晶性珪素膜の作製方法

Country Status (3)

Country Link
US (4) US6420246B1 (enExample)
JP (1) JP3976828B2 (enExample)
KR (2) KR100513143B1 (enExample)

Families Citing this family (27)

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US7075002B1 (en) * 1995-03-27 2006-07-11 Semiconductor Energy Laboratory Company, Ltd. Thin-film photoelectric conversion device and a method of manufacturing the same
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法
JP2000039628A (ja) * 1998-05-16 2000-02-08 Semiconductor Energy Lab Co Ltd 半導体表示装置
AU2001241919A1 (en) * 2000-03-03 2001-09-17 Midwest Research Institute A1 processing for impurity gettering in silicon
US6916693B2 (en) * 2000-03-08 2005-07-12 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7098084B2 (en) 2000-03-08 2006-08-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2001319878A (ja) * 2000-05-11 2001-11-16 Sharp Corp 半導体製造方法
JP2001332741A (ja) * 2000-05-25 2001-11-30 Sony Corp 薄膜トランジスタの製造方法
KR100962054B1 (ko) * 2000-12-05 2010-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 제조 방법
KR100418217B1 (ko) * 2001-12-27 2004-02-14 엘지.필립스 엘시디 주식회사 폴리실리콘 박막트랜지스터 제조방법
US6841434B2 (en) * 2002-03-26 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating semiconductor device
TWI288443B (en) 2002-05-17 2007-10-11 Semiconductor Energy Lab SiN film, semiconductor device, and the manufacturing method thereof
US7232774B2 (en) * 2004-01-20 2007-06-19 International Business Machines Corporation Polycrystalline silicon layer with nano-grain structure and method of manufacture
KR100600874B1 (ko) 2004-06-09 2006-07-14 삼성에스디아이 주식회사 박막트랜지스터 및 그의 제조 방법
KR100666564B1 (ko) * 2004-08-04 2007-01-09 삼성에스디아이 주식회사 박막트랜지스터의 제조 방법
US7276393B2 (en) 2004-08-26 2007-10-02 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US20060208257A1 (en) * 2005-03-15 2006-09-21 Branz Howard M Method for low-temperature, hetero-epitaxial growth of thin film cSi on amorphous and multi-crystalline substrates and c-Si devices on amorphous, multi-crystalline, and crystalline substrates
US8088676B2 (en) * 2005-04-28 2012-01-03 The Hong Kong University Of Science And Technology Metal-induced crystallization of amorphous silicon, polycrystalline silicon thin films produced thereby and thin film transistors produced therefrom
KR100770269B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
KR100770268B1 (ko) * 2006-05-18 2007-10-25 삼성에스디아이 주식회사 박막트랜지스터의 제조방법
CN101681843B (zh) * 2007-06-20 2012-05-09 株式会社半导体能源研究所 半导体装置的制造方法
DE102009055685A1 (de) * 2009-11-25 2011-05-26 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Qualitätsverbesserung von Wafern sowie Verwendung des Verfahrens
US9070854B2 (en) * 2012-04-27 2015-06-30 Varian Semiconductor Equipment Associates, Inc. Techniques for patterning multilayer magnetic memory devices using ion implantation
JP6101977B2 (ja) 2013-03-13 2017-03-29 学校法人沖縄科学技術大学院大学学園 アモルファス半導体量子ドットの金属誘起ナノ結晶化
CN105177706A (zh) * 2015-08-17 2015-12-23 南京大学 一种制备高质量柔性单晶硅纳米线的方法
US11189493B2 (en) 2018-02-19 2021-11-30 Denso Corporation Silicon carbide semiconductor device and method for manufacturing the same
JP7581098B2 (ja) * 2021-03-19 2024-11-12 キオクシア株式会社 半導体装置の製造方法

Family Cites Families (28)

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Publication number Priority date Publication date Assignee Title
US5244819A (en) 1991-10-22 1993-09-14 Honeywell Inc. Method to getter contamination in semiconductor devices
JPH05152011A (ja) * 1991-11-26 1993-06-18 Sumitomo Wiring Syst Ltd 圧着端子
JPH06140631A (ja) * 1992-10-28 1994-05-20 Ryoden Semiconductor Syst Eng Kk 電界効果型薄膜トランジスタおよびその製造方法
US5639698A (en) 1993-02-15 1997-06-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor, semiconductor device, and method for fabricating the same
JP3562588B2 (ja) 1993-02-15 2004-09-08 株式会社半導体エネルギー研究所 半導体装置の製造方法
JPH06244103A (ja) 1993-02-15 1994-09-02 Semiconductor Energy Lab Co Ltd 半導体の製造方法
JP2814049B2 (ja) 1993-08-27 1998-10-22 株式会社半導体エネルギー研究所 半導体装置およびその作製方法
JP3431033B2 (ja) 1993-10-29 2003-07-28 株式会社半導体エネルギー研究所 半導体作製方法
US5923962A (en) 1993-10-29 1999-07-13 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a semiconductor device
TW264575B (enExample) 1993-10-29 1995-12-01 Handotai Energy Kenkyusho Kk
JP3844526B2 (ja) 1994-04-13 2006-11-15 株式会社半導体エネルギー研究所 結晶性珪素膜作製方法
JP3190517B2 (ja) 1994-05-13 2001-07-23 株式会社半導体エネルギー研究所 半導体の作製方法
TW280943B (enExample) * 1994-07-15 1996-07-11 Sharp Kk
US5789284A (en) * 1994-09-29 1998-08-04 Semiconductor Energy Laboratory Co., Ltd. Method for fabricating semiconductor thin film
US5773309A (en) * 1994-10-14 1998-06-30 The Regents Of The University Of California Method for producing silicon thin-film transistors with enhanced forward current drive
JP3364081B2 (ja) * 1995-02-16 2003-01-08 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3522381B2 (ja) * 1995-03-01 2004-04-26 株式会社半導体エネルギー研究所 薄膜半導体デバイス及び薄膜半導体デバイスの作製方法
TW355845B (en) * 1995-03-27 1999-04-11 Semiconductor Energy Lab Co Ltd Semiconductor device and a method of manufacturing the same
KR100265179B1 (ko) 1995-03-27 2000-09-15 야마자끼 순페이 반도체장치와 그의 제작방법
JP3539821B2 (ja) 1995-03-27 2004-07-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2616739B2 (ja) 1995-03-29 1997-06-04 日本電気株式会社 サーボパターン書込み装置
JP2762968B2 (ja) * 1995-09-28 1998-06-11 日本電気株式会社 電界効果型薄膜トランジスタの製造方法
TW319912B (enExample) * 1995-12-15 1997-11-11 Handotai Energy Kenkyusho Kk
US5773329A (en) * 1996-07-24 1998-06-30 International Business Machines Corporation Polysilicon grown by pulsed rapid thermal annealing
US5776309A (en) * 1997-01-21 1998-07-07 Badger Paper Mills, Inc. Method and apparatus for measuring and controlling the speed of papermaking fabrics
US5834071A (en) * 1997-02-11 1998-11-10 Industrial Technology Research Institute Method for forming a thin film transistor
JP3973723B2 (ja) 1997-02-12 2007-09-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3976828B2 (ja) * 1997-02-17 2007-09-19 株式会社半導体エネルギー研究所 結晶性珪素膜の作製方法

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