JP2001085329A5 - - Google Patents

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Publication number
JP2001085329A5
JP2001085329A5 JP1999262862A JP26286299A JP2001085329A5 JP 2001085329 A5 JP2001085329 A5 JP 2001085329A5 JP 1999262862 A JP1999262862 A JP 1999262862A JP 26286299 A JP26286299 A JP 26286299A JP 2001085329 A5 JP2001085329 A5 JP 2001085329A5
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JP
Japan
Prior art keywords
semiconductor film
amorphous semiconductor
mask
metal element
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1999262862A
Other languages
English (en)
Japanese (ja)
Other versions
JP2001085329A (ja
JP4853845B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP26286299A priority Critical patent/JP4853845B2/ja
Priority claimed from JP26286299A external-priority patent/JP4853845B2/ja
Publication of JP2001085329A publication Critical patent/JP2001085329A/ja
Publication of JP2001085329A5 publication Critical patent/JP2001085329A5/ja
Application granted granted Critical
Publication of JP4853845B2 publication Critical patent/JP4853845B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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JP26286299A 1999-09-17 1999-09-17 半導体装置の作製方法 Expired - Fee Related JP4853845B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26286299A JP4853845B2 (ja) 1999-09-17 1999-09-17 半導体装置の作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26286299A JP4853845B2 (ja) 1999-09-17 1999-09-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JP2001085329A JP2001085329A (ja) 2001-03-30
JP2001085329A5 true JP2001085329A5 (enExample) 2006-10-26
JP4853845B2 JP4853845B2 (ja) 2012-01-11

Family

ID=17381674

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26286299A Expired - Fee Related JP4853845B2 (ja) 1999-09-17 1999-09-17 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4853845B2 (enExample)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100437474B1 (ko) * 2001-04-04 2004-06-23 삼성에스디아이 주식회사 듀얼채널층을 갖는 박막 트랜지스터 및 그의 제조방법
KR100806846B1 (ko) 2007-01-18 2008-02-22 성균관대학교산학협력단 비정질 실리콘 박막의 결정화 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4056571B2 (ja) * 1995-08-02 2008-03-05 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH10303430A (ja) * 1997-04-26 1998-11-13 Semiconductor Energy Lab Co Ltd 半導体装置の作製方法
JP3844561B2 (ja) * 1997-06-10 2006-11-15 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4180689B2 (ja) * 1997-07-24 2008-11-12 株式会社半導体エネルギー研究所 半導体装置の作製方法
JPH11329969A (ja) * 1998-05-18 1999-11-30 Sharp Corp 半導体装置およびその製造方法
JP3460962B2 (ja) * 1999-01-21 2003-10-27 シャープ株式会社 半導体装置の製造方法

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