JP4853845B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
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- JP4853845B2 JP4853845B2 JP26286299A JP26286299A JP4853845B2 JP 4853845 B2 JP4853845 B2 JP 4853845B2 JP 26286299 A JP26286299 A JP 26286299A JP 26286299 A JP26286299 A JP 26286299A JP 4853845 B2 JP4853845 B2 JP 4853845B2
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- gettering
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
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- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 2
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 2
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
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- 239000002585 base Substances 0.000 description 1
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- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
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- 230000002349 favourable effect Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910021344 molybdenum silicide Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
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- 230000000704 physical effect Effects 0.000 description 1
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- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910021341 titanium silicide Inorganic materials 0.000 description 1
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 1
- 229910021342 tungsten silicide Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
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- Recrystallisation Techniques (AREA)
- Thin Film Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26286299A JP4853845B2 (ja) | 1999-09-17 | 1999-09-17 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26286299A JP4853845B2 (ja) | 1999-09-17 | 1999-09-17 | 半導体装置の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2001085329A JP2001085329A (ja) | 2001-03-30 |
| JP2001085329A5 JP2001085329A5 (enExample) | 2006-10-26 |
| JP4853845B2 true JP4853845B2 (ja) | 2012-01-11 |
Family
ID=17381674
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26286299A Expired - Fee Related JP4853845B2 (ja) | 1999-09-17 | 1999-09-17 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4853845B2 (enExample) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100437474B1 (ko) * | 2001-04-04 | 2004-06-23 | 삼성에스디아이 주식회사 | 듀얼채널층을 갖는 박막 트랜지스터 및 그의 제조방법 |
| KR100806846B1 (ko) | 2007-01-18 | 2008-02-22 | 성균관대학교산학협력단 | 비정질 실리콘 박막의 결정화 방법 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4056571B2 (ja) * | 1995-08-02 | 2008-03-05 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH10303430A (ja) * | 1997-04-26 | 1998-11-13 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| JP3844561B2 (ja) * | 1997-06-10 | 2006-11-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP4180689B2 (ja) * | 1997-07-24 | 2008-11-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JPH11329969A (ja) * | 1998-05-18 | 1999-11-30 | Sharp Corp | 半導体装置およびその製造方法 |
| JP3460962B2 (ja) * | 1999-01-21 | 2003-10-27 | シャープ株式会社 | 半導体装置の製造方法 |
-
1999
- 1999-09-17 JP JP26286299A patent/JP4853845B2/ja not_active Expired - Fee Related
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| Publication number | Publication date |
|---|---|
| JP2001085329A (ja) | 2001-03-30 |
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