JP2000133594A5 - - Google Patents

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Publication number
JP2000133594A5
JP2000133594A5 JP1999230057A JP23005799A JP2000133594A5 JP 2000133594 A5 JP2000133594 A5 JP 2000133594A5 JP 1999230057 A JP1999230057 A JP 1999230057A JP 23005799 A JP23005799 A JP 23005799A JP 2000133594 A5 JP2000133594 A5 JP 2000133594A5
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JP
Japan
Prior art keywords
semiconductor film
crystallinity
heat
treating
group
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP1999230057A
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English (en)
Japanese (ja)
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JP2000133594A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11230057A priority Critical patent/JP2000133594A/ja
Priority claimed from JP11230057A external-priority patent/JP2000133594A/ja
Publication of JP2000133594A publication Critical patent/JP2000133594A/ja
Publication of JP2000133594A5 publication Critical patent/JP2000133594A5/ja
Withdrawn legal-status Critical Current

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JP11230057A 1998-08-18 1999-08-16 半導体装置の作製方法 Withdrawn JP2000133594A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11230057A JP2000133594A (ja) 1998-08-18 1999-08-16 半導体装置の作製方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-232080 1998-08-18
JP23208098 1998-08-18
JP11230057A JP2000133594A (ja) 1998-08-18 1999-08-16 半導体装置の作製方法

Publications (2)

Publication Number Publication Date
JP2000133594A JP2000133594A (ja) 2000-05-12
JP2000133594A5 true JP2000133594A5 (enExample) 2006-09-28

Family

ID=26529120

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11230057A Withdrawn JP2000133594A (ja) 1998-08-18 1999-08-16 半導体装置の作製方法

Country Status (1)

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JP (1) JP2000133594A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821005B2 (en) 2000-12-19 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and semiconductor device

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4968996B2 (ja) * 2000-09-01 2012-07-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4677546B2 (ja) * 2000-10-06 2011-04-27 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP4932081B2 (ja) * 2000-12-27 2012-05-16 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6858480B2 (en) 2001-01-18 2005-02-22 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
JP4926321B2 (ja) * 2001-01-24 2012-05-09 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3961240B2 (ja) * 2001-06-28 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP3961310B2 (ja) 2002-02-21 2007-08-22 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP5172079B2 (ja) * 2005-05-26 2013-03-27 株式会社ジャパンディスプレイイースト 画像表示装置の製造方法
US7759262B2 (en) * 2008-06-30 2010-07-20 Intel Corporation Selective formation of dielectric etch stop layers
KR20230038710A (ko) 2020-07-17 2023-03-21 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7821005B2 (en) 2000-12-19 2010-10-26 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device and semiconductor device

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