JP2002237466A5 - - Google Patents
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- Publication number
- JP2002237466A5 JP2002237466A5 JP2001370878A JP2001370878A JP2002237466A5 JP 2002237466 A5 JP2002237466 A5 JP 2002237466A5 JP 2001370878 A JP2001370878 A JP 2001370878A JP 2001370878 A JP2001370878 A JP 2001370878A JP 2002237466 A5 JP2002237466 A5 JP 2002237466A5
- Authority
- JP
- Japan
- Prior art keywords
- amorphous
- semiconductor region
- region
- ion implantation
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 claims 28
- 238000005468 ion implantation Methods 0.000 claims 16
- 239000000758 substrate Substances 0.000 claims 15
- 238000000034 method Methods 0.000 claims 7
- 238000000137 annealing Methods 0.000 claims 6
- 238000001994 activation Methods 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 4
- 229910052751 metal Inorganic materials 0.000 claims 4
- 239000002184 metal Substances 0.000 claims 4
- 229910021332 silicide Inorganic materials 0.000 claims 4
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 4
- 229910052785 arsenic Inorganic materials 0.000 claims 3
- 238000004519 manufacturing process Methods 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 2
- 230000004913 activation Effects 0.000 claims 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims 2
- 229910052736 halogen Inorganic materials 0.000 claims 2
- 150000002367 halogens Chemical class 0.000 claims 2
- 239000011261 inert gas Substances 0.000 claims 2
- 229910052698 phosphorus Inorganic materials 0.000 claims 2
- 239000011574 phosphorus Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 238000011084 recovery Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001370878A JP2002237466A (ja) | 1998-12-09 | 2001-12-05 | 半導体装置の製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP35007598 | 1998-12-09 | ||
| JP10-350075 | 1998-12-09 | ||
| JP2001370878A JP2002237466A (ja) | 1998-12-09 | 2001-12-05 | 半導体装置の製造方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP34987599A Division JP3272706B2 (ja) | 1998-12-09 | 1999-12-09 | 温度測定用サンプルの作成方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2004153436A Division JP2004320041A (ja) | 1998-12-09 | 2004-05-24 | 半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2002237466A JP2002237466A (ja) | 2002-08-23 |
| JP2002237466A5 true JP2002237466A5 (enExample) | 2005-01-06 |
Family
ID=26579115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001370878A Pending JP2002237466A (ja) | 1998-12-09 | 2001-12-05 | 半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2002237466A (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006351581A (ja) * | 2005-06-13 | 2006-12-28 | Fujitsu Ltd | 半導体装置の製造方法 |
| JP2012004185A (ja) * | 2010-06-14 | 2012-01-05 | Denso Corp | 炭化珪素半導体装置の製造方法 |
| WO2012073583A1 (en) * | 2010-12-03 | 2012-06-07 | Kabushiki Kaisha Toshiba | Method of forming an inpurity implantation layer |
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2001
- 2001-12-05 JP JP2001370878A patent/JP2002237466A/ja active Pending