JP2001298186A5 - - Google Patents

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Publication number
JP2001298186A5
JP2001298186A5 JP2000118491A JP2000118491A JP2001298186A5 JP 2001298186 A5 JP2001298186 A5 JP 2001298186A5 JP 2000118491 A JP2000118491 A JP 2000118491A JP 2000118491 A JP2000118491 A JP 2000118491A JP 2001298186 A5 JP2001298186 A5 JP 2001298186A5
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JP
Japan
Prior art keywords
film
metal
tungsten
silicide
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2000118491A
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English (en)
Japanese (ja)
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JP2001298186A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP2000118491A priority Critical patent/JP2001298186A/ja
Priority claimed from JP2000118491A external-priority patent/JP2001298186A/ja
Priority to US09/829,969 priority patent/US6750503B2/en
Priority to KR1020010019864A priority patent/KR20010098593A/ko
Priority to TW090108966A priority patent/TW492186B/zh
Publication of JP2001298186A publication Critical patent/JP2001298186A/ja
Priority to US10/812,995 priority patent/US20040178440A1/en
Publication of JP2001298186A5 publication Critical patent/JP2001298186A5/ja
Priority to US11/087,612 priority patent/US20050164441A1/en
Pending legal-status Critical Current

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JP2000118491A 2000-04-14 2000-04-14 半導体装置およびその製造方法 Pending JP2001298186A (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2000118491A JP2001298186A (ja) 2000-04-14 2000-04-14 半導体装置およびその製造方法
US09/829,969 US6750503B2 (en) 2000-04-14 2001-04-11 Stacked gate electrode for a MOS transistor of a semiconductor device
KR1020010019864A KR20010098593A (ko) 2000-04-14 2001-04-13 반도체 장치 및 그 제조 방법
TW090108966A TW492186B (en) 2000-04-14 2001-04-13 Semiconductor device and process for producing the same
US10/812,995 US20040178440A1 (en) 2000-04-14 2004-03-31 Semiconductor device and process for producing the same
US11/087,612 US20050164441A1 (en) 2000-04-14 2005-03-24 Semiconductor device and process for producing the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2000118491A JP2001298186A (ja) 2000-04-14 2000-04-14 半導体装置およびその製造方法

Publications (2)

Publication Number Publication Date
JP2001298186A JP2001298186A (ja) 2001-10-26
JP2001298186A5 true JP2001298186A5 (enExample) 2004-10-14

Family

ID=18629618

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2000118491A Pending JP2001298186A (ja) 2000-04-14 2000-04-14 半導体装置およびその製造方法

Country Status (4)

Country Link
US (3) US6750503B2 (enExample)
JP (1) JP2001298186A (enExample)
KR (1) KR20010098593A (enExample)
TW (1) TW492186B (enExample)

Families Citing this family (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4651848B2 (ja) * 2000-07-21 2011-03-16 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法並びにｃｍｏｓトランジスタ
JP4926329B2 (ja) * 2001-03-27 2012-05-09 株式会社半導体エネルギー研究所 半導体装置およびその作製方法、電気器具
US7132698B2 (en) * 2002-01-25 2006-11-07 International Rectifier Corporation Compression assembled electronic package having a plastic molded insulation ring
US7084423B2 (en) 2002-08-12 2006-08-01 Acorn Technologies, Inc. Method for depinning the Fermi level of a semiconductor at an electrical junction and devices incorporating such junctions
US6833556B2 (en) 2002-08-12 2004-12-21 Acorn Technologies, Inc. Insulated gate field effect transistor having passivated schottky barriers to the channel
US6902993B2 (en) * 2003-03-28 2005-06-07 Cypress Semiconductor Corporation Gate electrode for MOS transistors
JP2004319722A (ja) 2003-04-16 2004-11-11 Hitachi Ltd 半導体集積回路装置およびその製造方法
US7534709B2 (en) 2003-05-29 2009-05-19 Samsung Electronics Co., Ltd. Semiconductor device and method of manufacturing the same
KR100693878B1 (ko) 2004-12-08 2007-03-12 삼성전자주식회사 낮은 저항을 갖는 반도체 장치 및 그 제조 방법
US7183221B2 (en) * 2003-11-06 2007-02-27 Texas Instruments Incorporated Method of fabricating a semiconductor having dual gate electrodes using a composition-altered metal layer
US20050124127A1 (en) * 2003-12-04 2005-06-09 Tzu-En Ho Method for manufacturing gate structure for use in semiconductor device
DE102004004864B4 (de) * 2004-01-30 2008-09-11 Qimonda Ag Verfahren zur Herstellung einer Gate-Struktur und Gate-Struktur für einen Transistor
JP2005327848A (ja) * 2004-05-13 2005-11-24 Toshiba Corp 半導体装置及びその製造方法
KR100681211B1 (ko) * 2005-06-30 2007-02-09 주식회사 하이닉스반도체 이중 확산방지막을 갖는 게이트전극 및 그를 구비한반도체소자의 제조 방법
KR100655658B1 (ko) * 2005-07-26 2006-12-08 삼성전자주식회사 게이트 전극 구조물과 그 제조 방법 및 이를 갖는 반도체트랜지스터와 그 제조 방법
KR100654358B1 (ko) * 2005-08-10 2006-12-08 삼성전자주식회사 반도체 집적 회로 장치와 그 제조 방법
KR100642761B1 (ko) * 2005-09-07 2006-11-10 삼성전자주식회사 반도체 소자 및 그 제조 방법
KR100694660B1 (ko) * 2006-03-08 2007-03-13 삼성전자주식회사 트랜지스터 및 그 제조 방법
JP4327820B2 (ja) * 2006-06-05 2009-09-09 株式会社東芝 半導体装置およびその製造方法
KR100914283B1 (ko) * 2006-12-28 2009-08-27 주식회사 하이닉스반도체 반도체소자의 폴리메탈게이트 형성방법
JP4575400B2 (ja) * 2007-05-08 2010-11-04 株式会社東芝 半導体装置の製造方法
KR20100100178A (ko) * 2009-03-05 2010-09-15 삼성전자주식회사 반도체 소자
WO2013077954A1 (en) 2011-11-23 2013-05-30 Acorn Technologies, Inc. Improving metal contacts to group iv semiconductors by inserting interfacial atomic monolayers
KR20140007609A (ko) * 2012-07-09 2014-01-20 삼성전자주식회사 반도체 장치의 제조방법
JP2014053557A (ja) * 2012-09-10 2014-03-20 Toshiba Corp 半導体装置およびその製造方法
US20170054032A1 (en) * 2015-01-09 2017-02-23 SanDisk Technologies, Inc. Non-volatile memory having individually optimized silicide contacts and process therefor
US9620611B1 (en) 2016-06-17 2017-04-11 Acorn Technology, Inc. MIS contact structure with metal oxide conductor
WO2018094205A1 (en) 2016-11-18 2018-05-24 Acorn Technologies, Inc. Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height
CN107221495B (zh) * 2017-06-05 2018-07-20 睿力集成电路有限公司 一种半导体器件结构及其制备方法
WO2019093206A1 (ja) * 2017-11-09 2019-05-16 国立研究開発法人産業技術総合研究所 半導体装置及びその製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5010032A (en) * 1985-05-01 1991-04-23 Texas Instruments Incorporated Process for making CMOS device with both P+ and N+ gates including refractory metal silicide and nitride interconnects
US6291868B1 (en) * 1998-02-26 2001-09-18 Micron Technology, Inc. Forming a conductive structure in a semiconductor device
US6265297B1 (en) * 1999-09-01 2001-07-24 Micron Technology, Inc. Ammonia passivation of metal gate electrodes to inhibit oxidation of metal
US20020008294A1 (en) * 2000-07-21 2002-01-24 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and method for manufacturing same
KR100351907B1 (ko) * 2000-11-17 2002-09-12 주식회사 하이닉스반도체 반도체 소자의 게이트 전극 형성방법

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