JP2002237466A - 半導体装置の製造方法 - Google Patents

半導体装置の製造方法

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Publication number
JP2002237466A
JP2002237466A JP2001370878A JP2001370878A JP2002237466A JP 2002237466 A JP2002237466 A JP 2002237466A JP 2001370878 A JP2001370878 A JP 2001370878A JP 2001370878 A JP2001370878 A JP 2001370878A JP 2002237466 A JP2002237466 A JP 2002237466A
Authority
JP
Japan
Prior art keywords
region
amorphous
temperature
amorphous region
ion implantation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2001370878A
Other languages
English (en)
Japanese (ja)
Other versions
JP2002237466A5 (enExample
Inventor
Yuko Nanbu
優子 南部
Satoshi Shibata
聡 柴田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP2001370878A priority Critical patent/JP2002237466A/ja
Publication of JP2002237466A publication Critical patent/JP2002237466A/ja
Publication of JP2002237466A5 publication Critical patent/JP2002237466A5/ja
Pending legal-status Critical Current

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  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP2001370878A 1998-12-09 2001-12-05 半導体装置の製造方法 Pending JP2002237466A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2001370878A JP2002237466A (ja) 1998-12-09 2001-12-05 半導体装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP35007598 1998-12-09
JP10-350075 1998-12-09
JP2001370878A JP2002237466A (ja) 1998-12-09 2001-12-05 半導体装置の製造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
JP34987599A Division JP3272706B2 (ja) 1998-12-09 1999-12-09 温度測定用サンプルの作成方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2004153436A Division JP2004320041A (ja) 1998-12-09 2004-05-24 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JP2002237466A true JP2002237466A (ja) 2002-08-23
JP2002237466A5 JP2002237466A5 (enExample) 2005-01-06

Family

ID=26579115

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2001370878A Pending JP2002237466A (ja) 1998-12-09 2001-12-05 半導体装置の製造方法

Country Status (1)

Country Link
JP (1) JP2002237466A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390707B2 (en) 2005-06-13 2008-06-24 Fujitsu Limited Semiconductor device fabrication method
JP2012004185A (ja) * 2010-06-14 2012-01-05 Denso Corp 炭化珪素半導体装置の製造方法
JP2012134460A (ja) * 2010-12-03 2012-07-12 Toshiba Corp 半導体装置の製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7390707B2 (en) 2005-06-13 2008-06-24 Fujitsu Limited Semiconductor device fabrication method
CN100442464C (zh) * 2005-06-13 2008-12-10 富士通株式会社 半导体器件制造方法
JP2012004185A (ja) * 2010-06-14 2012-01-05 Denso Corp 炭化珪素半導体装置の製造方法
JP2012134460A (ja) * 2010-12-03 2012-07-12 Toshiba Corp 半導体装置の製造方法

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