JPH10294279A5 - - Google Patents

Info

Publication number
JPH10294279A5
JPH10294279A5 JP1997115274A JP11527497A JPH10294279A5 JP H10294279 A5 JPH10294279 A5 JP H10294279A5 JP 1997115274 A JP1997115274 A JP 1997115274A JP 11527497 A JP11527497 A JP 11527497A JP H10294279 A5 JPH10294279 A5 JP H10294279A5
Authority
JP
Japan
Prior art keywords
thin film
semiconductor thin
irradiated
linear
light
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1997115274A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10294279A (ja
JP4130243B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP11527497A priority Critical patent/JP4130243B2/ja
Priority claimed from JP11527497A external-priority patent/JP4130243B2/ja
Priority to US09/038,640 priority patent/US6423585B1/en
Publication of JPH10294279A publication Critical patent/JPH10294279A/ja
Priority to US10/141,206 priority patent/US7214574B2/en
Publication of JPH10294279A5 publication Critical patent/JPH10294279A5/ja
Priority to US11/325,513 priority patent/US7410850B2/en
Application granted granted Critical
Publication of JP4130243B2 publication Critical patent/JP4130243B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP11527497A 1997-03-11 1997-04-17 半導体装置の作製方法 Expired - Fee Related JP4130243B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP11527497A JP4130243B2 (ja) 1997-04-17 1997-04-17 半導体装置の作製方法
US09/038,640 US6423585B1 (en) 1997-03-11 1998-03-10 Heating treatment device, heating treatment method and fabrication method of semiconductor device
US10/141,206 US7214574B2 (en) 1997-03-11 2002-05-07 Heating treatment device, heating treatment method and fabrication method of semiconductor device
US11/325,513 US7410850B2 (en) 1997-03-11 2006-01-05 Heating treatment device, heating treatment method and fabrication method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11527497A JP4130243B2 (ja) 1997-04-17 1997-04-17 半導体装置の作製方法

Publications (3)

Publication Number Publication Date
JPH10294279A JPH10294279A (ja) 1998-11-04
JPH10294279A5 true JPH10294279A5 (enExample) 2005-03-17
JP4130243B2 JP4130243B2 (ja) 2008-08-06

Family

ID=14658612

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11527497A Expired - Fee Related JP4130243B2 (ja) 1997-03-11 1997-04-17 半導体装置の作製方法

Country Status (1)

Country Link
JP (1) JP4130243B2 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4827276B2 (ja) * 1999-07-05 2011-11-30 株式会社半導体エネルギー研究所 レーザー照射装置、レーザー照射方法及び半導体装置の作製方法
KR100330866B1 (ko) * 1999-10-06 2002-04-03 이장무 실리콘 기판 직접 접합용 선형 열처리 방법
JP4966486B2 (ja) * 2004-09-27 2012-07-04 国立大学法人電気通信大学 結晶質シリコン内在ＳｉＯｘ成形体の製造方法とその用途

Similar Documents

Publication Publication Date Title
US7279721B2 (en) Dual wavelength thermal flux laser anneal
EP0124261B1 (en) Process for producing monocrystalline layer on insulator
JP2002217125A (ja) 表面処理装置及び方法
JPH1064842A5 (enExample)
US5302230A (en) Heat treatment by light irradiation
JPH10294279A5 (enExample)
JPH07187890A (ja) レーザーアニーリング方法
JP2002151410A (ja) 結晶質半導体材料の製造方法および半導体装置の製造方法
JPS61116820A (ja) 半導体のアニ−ル方法
JP2000133594A5 (enExample)
JP5555245B2 (ja) プライミングおよび光束によって板状体の層を加熱するための方法および装置
US6759284B2 (en) Method for polysilicon crystallization by simultaneous laser and rapid thermal annealing
JP2004214400A5 (enExample)
JPH0420254B2 (enExample)
JPS59139624A (ja) 試料の加熱方法
JP2005150608A (ja) ガラス基板の光処理方法およびデバイス
JP2002083768A5 (ja) 単結晶薄膜の製造方法
JP4581240B2 (ja) 炭化珪素半導体装置の製造方法
JPH0133937B2 (enExample)
JP2003163164A (ja) 結晶性半導体薄膜及びその形成方法
JPH10294279A (ja) 半導体装置の作製方法
JP3065730B2 (ja) 光ｃｖｄ装置
JPH07118444B2 (ja) 半導体薄膜の熱処理方法
JPS58176928A (ja) 光アニ−ル方法
JP2001338875A5 (enExample)