JP4966486B2 - 結晶質シリコン内在SiOx成形体の製造方法とその用途 - Google Patents
結晶質シリコン内在SiOx成形体の製造方法とその用途 Download PDFInfo
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- JP4966486B2 JP4966486B2 JP2004280053A JP2004280053A JP4966486B2 JP 4966486 B2 JP4966486 B2 JP 4966486B2 JP 2004280053 A JP2004280053 A JP 2004280053A JP 2004280053 A JP2004280053 A JP 2004280053A JP 4966486 B2 JP4966486 B2 JP 4966486B2
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
- C01B33/12—Silica; Hydrates thereof, e.g. lepidoic silicic acid
- C01B33/18—Preparation of finely divided silica neither in sol nor in gel form; After-treatment thereof
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/113—Silicon oxides; Hydrates thereof
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/28—Compounds of silicon
- C09C1/30—Silicic acid
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09C—TREATMENT OF INORGANIC MATERIALS, OTHER THAN FIBROUS FILLERS, TO ENHANCE THEIR PIGMENTING OR FILLING PROPERTIES ; PREPARATION OF CARBON BLACK ; PREPARATION OF INORGANIC MATERIALS WHICH ARE NO SINGLE CHEMICAL COMPOUNDS AND WHICH ARE MAINLY USED AS PIGMENTS OR FILLERS
- C09C1/00—Treatment of specific inorganic materials other than fibrous fillers; Preparation of carbon black
- C09C1/28—Compounds of silicon
- C09C1/30—Silicic acid
- C09C1/3009—Physical treatment, e.g. grinding; treatment with ultrasonic vibrations
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K11/00—Luminescent, e.g. electroluminescent, chemiluminescent materials
- C09K11/08—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials
- C09K11/59—Luminescent, e.g. electroluminescent, chemiluminescent materials containing inorganic luminescent materials containing silicon
- C09K11/592—Chalcogenides
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
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- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Nanotechnology (AREA)
- Composite Materials (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physics & Mathematics (AREA)
- Silicon Compounds (AREA)
- Recrystallisation Techniques (AREA)
- Luminescent Compositions (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Description
日経先端技術2003.01.27号、1〜4頁
Appl.Phys.Lett.,60,2086(1992) Appl.Phys.Lett.,69(2),200(1996)
Claims (8)
- 粒径0.3〜0.8nmの非晶質シリコン粒子を内在するSiOx(Xは0.5以上2.0未満)粒子に、光を照射して、粒径1〜10nmの結晶質シリコン粒子を内在するSiOx(Xは0.5以上2.0未満)粒子とすることを特徴とするSiOx粒子の製造方法。
- 光がレーザー光であることを特徴とする請求項1記載のSiOx粒子の製造方法。
- 粒径0.3〜0.8nmの非晶質シリコン粒子を内在するSiOx(Xは0.5以上2.0未満)粒子が、モノシランガスとモノシランガスを酸化するための酸化性ガスとを、圧力10〜1000kPa、温度500〜1000℃の条件下で反応して得たものであることを特徴とする請求項1又は請求項2記載のSiOx粒子の製造方法。
- 粒径0.3〜0.8nmの非晶質シリコン粒子を内在するSiOx(Xは0.5以上2.0未満)粒子を含有する粉末を、成形して成形体とした後、当該成形体に光を照射して、粒径1〜10nmの結晶質シリコン粒子を内在するSiOx(Xは0.5以上2.0未満)粒子を含む成形体とすることを特徴とするSiOx成形体の製造方法。
- 光がレーザー光であることを特徴とする請求項4記載のSiOx成形体の製造方法。
- 粒径0.3〜0.8nmの非晶質シリコン粒子を内在するSiOx(Xは0.5以上2.0未満)粒子が、モノシランガスとモノシランガスを酸化するための酸化性ガスとを、圧力10〜1000kPa、温度500〜1000℃の条件下で反応して得たものであることを特徴とする請求項4又は請求項5記載のSiOx成形体の製造方法。
- 請求項4から請求項6のいずれか一項に記載されたSiOx成形体の製造方法で得られ、粒径1〜10nmの結晶質シリコン粒子が光照射パターンに応じたパターンで配列されている成形体を用いてなることを特徴とする半導体素子。
- 請求項7に記載された半導体素子を用いてなることを特徴とする発光素子。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004280053A JP4966486B2 (ja) | 2004-09-27 | 2004-09-27 | 結晶質シリコン内在SiOx成形体の製造方法とその用途 |
KR1020077008727A KR101219950B1 (ko) | 2004-09-27 | 2005-09-22 | SiOx 입자의 제조 방법 |
EP05785446.5A EP1806317B1 (en) | 2004-09-27 | 2005-09-22 | PROCESS FOR PRODUCING SiOx PARTICLE |
CN2005800325943A CN101035742B (zh) | 2004-09-27 | 2005-09-22 | SiOx粒子的制造方法 |
PCT/JP2005/017466 WO2006035663A1 (ja) | 2004-09-27 | 2005-09-22 | SiOx粒子の製造方法 |
US11/663,586 US7803340B2 (en) | 2004-09-27 | 2005-09-22 | Process for producing siox particles |
TW094133485A TWI376351B (en) | 2004-09-27 | 2005-09-27 | Process for production of siox particle |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004280053A JP4966486B2 (ja) | 2004-09-27 | 2004-09-27 | 結晶質シリコン内在SiOx成形体の製造方法とその用途 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006089356A JP2006089356A (ja) | 2006-04-06 |
JP4966486B2 true JP4966486B2 (ja) | 2012-07-04 |
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Application Number | Title | Priority Date | Filing Date |
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JP2004280053A Active JP4966486B2 (ja) | 2004-09-27 | 2004-09-27 | 結晶質シリコン内在SiOx成形体の製造方法とその用途 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7803340B2 (ja) |
EP (1) | EP1806317B1 (ja) |
JP (1) | JP4966486B2 (ja) |
KR (1) | KR101219950B1 (ja) |
CN (1) | CN101035742B (ja) |
TW (1) | TWI376351B (ja) |
WO (1) | WO2006035663A1 (ja) |
Families Citing this family (12)
Publication number | Priority date | Publication date | Assignee | Title |
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JP5221075B2 (ja) * | 2007-08-09 | 2013-06-26 | 国立大学法人電気通信大学 | 酸化膜形成方法、MOSデバイス製造方法、MOSトランジスタ製造方法、SiOx粉末、及びSiOx粉末製造方法 |
KR100891457B1 (ko) * | 2007-11-05 | 2009-04-02 | 한국전자통신연구원 | 누설 전류가 감소된 박막 트랜지스터 및 그 제조방법과상기 박막 트랜지스터를 포함하는 능동 구동 표시 장치 |
DE102011010756A1 (de) * | 2010-09-14 | 2012-03-15 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Photostimulierbare Partikelsysteme, Verfahren zu deren Herstellung sowie Verwendungszwecke |
KR20130103782A (ko) * | 2011-01-07 | 2013-09-24 | 오사카 티타늄 테크놀로지스 캄파니 리미티드 | 리튬 이온 이차 전지 음극재용 분말, 이를 이용한 리튬 이온 이차 전지 음극 및 리튬 이온 이차 전지 |
KR101358867B1 (ko) | 2011-04-20 | 2014-02-06 | 한양대학교 산학협력단 | SiOx계 복합 분말, 이의 제조방법, 및 용도 |
JPWO2013084351A1 (ja) * | 2011-12-09 | 2015-04-27 | ワイティーエス・サイエンス・プロパティーズ・プライベート・リミテッド | 還元装置 |
US20140356247A1 (en) * | 2011-12-09 | 2014-12-04 | Yabe Science Promotion Llc | Cell System |
KR101724012B1 (ko) | 2012-08-23 | 2017-04-07 | 삼성에스디아이 주식회사 | 실리콘계 음극활물질, 그 제조방법 및 이를 포함하는 리튬 이차 전지 |
CN103987660B (zh) | 2012-11-30 | 2016-08-24 | Lg化学株式会社 | 氧化硅及其制备方法 |
JP2015060642A (ja) * | 2013-09-17 | 2015-03-30 | 中央電気工業株式会社 | ケイ素酸化物黒鉛複合粒子およびその製造方法 |
CN106118636A (zh) * | 2016-06-27 | 2016-11-16 | 高大元 | 一种荧光氧化硅纳米颗粒的制备方法 |
GB2605379A (en) * | 2021-03-29 | 2022-10-05 | Barton Blakeley Tech Limited | Reaction vessel |
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JP2544280B2 (ja) * | 1992-08-26 | 1996-10-16 | 宇部興産株式会社 | 結晶質珪素超微粒子の製造方法 |
JP4130243B2 (ja) * | 1997-04-17 | 2008-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
US6423585B1 (en) * | 1997-03-11 | 2002-07-23 | Semiconductor Energy Laboratory Co., Ltd. | Heating treatment device, heating treatment method and fabrication method of semiconductor device |
US6585947B1 (en) * | 1999-10-22 | 2003-07-01 | The Board Of Trustess Of The University Of Illinois | Method for producing silicon nanoparticles |
JP3952118B2 (ja) * | 2000-02-04 | 2007-08-01 | 信越化学工業株式会社 | 活性なケイ素を含むケイ素酸化物及びその評価方法 |
JP2001257368A (ja) | 2000-03-09 | 2001-09-21 | Matsushita Research Institute Tokyo Inc | 光電子材料及び応用素子、並びに光電子材料の製造方法 |
JP2002076358A (ja) | 2000-09-01 | 2002-03-15 | Japan Science & Technology Corp | 短チャネルスイッチング素子及びその製造方法 |
JP2002176180A (ja) * | 2000-12-06 | 2002-06-21 | Hitachi Ltd | 薄膜半導体素子及びその製造方法 |
TW594336B (en) * | 2002-01-30 | 2004-06-21 | Sanyo Electric Co | Semiconductor display device, method for making the same, and active matrix type display device |
JP3821031B2 (ja) * | 2002-03-20 | 2006-09-13 | 株式会社日立製作所 | デシカント空調システム |
CN1501493B (zh) * | 2002-11-13 | 2013-07-17 | 日本冲信息株式会社 | 具有半导体薄膜的组合半导体装置 |
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2004
- 2004-09-27 JP JP2004280053A patent/JP4966486B2/ja active Active
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2005
- 2005-09-22 KR KR1020077008727A patent/KR101219950B1/ko active IP Right Grant
- 2005-09-22 US US11/663,586 patent/US7803340B2/en not_active Expired - Fee Related
- 2005-09-22 CN CN2005800325943A patent/CN101035742B/zh not_active Expired - Fee Related
- 2005-09-22 EP EP05785446.5A patent/EP1806317B1/en not_active Not-in-force
- 2005-09-22 WO PCT/JP2005/017466 patent/WO2006035663A1/ja active Application Filing
- 2005-09-27 TW TW094133485A patent/TWI376351B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
KR20070083707A (ko) | 2007-08-24 |
KR101219950B1 (ko) | 2013-01-08 |
EP1806317B1 (en) | 2013-09-11 |
WO2006035663A1 (ja) | 2006-04-06 |
JP2006089356A (ja) | 2006-04-06 |
CN101035742A (zh) | 2007-09-12 |
TWI376351B (en) | 2012-11-11 |
EP1806317A4 (en) | 2010-12-01 |
EP1806317A1 (en) | 2007-07-11 |
US20070253883A1 (en) | 2007-11-01 |
TW200621634A (en) | 2006-07-01 |
US7803340B2 (en) | 2010-09-28 |
CN101035742B (zh) | 2011-01-12 |
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