JP2004214400A5 - - Google Patents
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- Publication number
- JP2004214400A5 JP2004214400A5 JP2002381896A JP2002381896A JP2004214400A5 JP 2004214400 A5 JP2004214400 A5 JP 2004214400A5 JP 2002381896 A JP2002381896 A JP 2002381896A JP 2002381896 A JP2002381896 A JP 2002381896A JP 2004214400 A5 JP2004214400 A5 JP 2004214400A5
- Authority
- JP
- Japan
- Prior art keywords
- wafer
- single crystal
- active layer
- manufacturing
- semiconductor substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 claims 9
- 239000000758 substrate Substances 0.000 claims 7
- 238000004519 manufacturing process Methods 0.000 claims 5
- 239000004065 semiconductor Substances 0.000 claims 5
- 238000000034 method Methods 0.000 claims 4
- 238000010438 heat treatment Methods 0.000 claims 3
- 238000005468 ion implantation Methods 0.000 claims 3
- 238000003776 cleavage reaction Methods 0.000 claims 2
- 230000007017 scission Effects 0.000 claims 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910052739 hydrogen Inorganic materials 0.000 claims 1
- 239000001257 hydrogen Substances 0.000 claims 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- 238000009751 slip forming Methods 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002381896A JP4427777B2 (ja) | 2002-12-27 | 2002-12-27 | 半導体基板の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002381896A JP4427777B2 (ja) | 2002-12-27 | 2002-12-27 | 半導体基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2004214400A JP2004214400A (ja) | 2004-07-29 |
| JP2004214400A5 true JP2004214400A5 (enExample) | 2005-09-15 |
| JP4427777B2 JP4427777B2 (ja) | 2010-03-10 |
Family
ID=32817681
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002381896A Expired - Fee Related JP4427777B2 (ja) | 2002-12-27 | 2002-12-27 | 半導体基板の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4427777B2 (enExample) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261591A (ja) * | 2005-03-18 | 2006-09-28 | Fujitsu Ltd | 絶縁ゲート型半導体装置の製造方法 |
| JP4869622B2 (ja) * | 2005-04-19 | 2012-02-08 | 信越半導体株式会社 | 貼り合わせウエーハの製造方法及びそれに用いる剥離用治具 |
| US7767583B2 (en) * | 2008-03-04 | 2010-08-03 | Varian Semiconductor Equipment Associates, Inc. | Method to improve uniformity of chemical mechanical polishing planarization |
| US8741740B2 (en) | 2008-10-02 | 2014-06-03 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing SOI substrate |
| JP2010187373A (ja) * | 2009-01-19 | 2010-08-26 | Ngk Insulators Ltd | 複合基板及びそれを用いた弾性波デバイス |
| KR101661361B1 (ko) * | 2010-01-14 | 2016-09-29 | 엔지케이 인슐레이터 엘티디 | 복합 기판, 및 그것을 이용한 탄성 표면파 필터와 탄성 표면파 공진기 |
| CN106960811A (zh) * | 2016-01-12 | 2017-07-18 | 沈阳硅基科技有限公司 | 一种soi硅片的制备方法 |
| JP7318580B2 (ja) * | 2020-03-30 | 2023-08-01 | 信越半導体株式会社 | Ｓｏｉウェーハの製造方法 |
-
2002
- 2002-12-27 JP JP2002381896A patent/JP4427777B2/ja not_active Expired - Fee Related
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