JP2007201502A5 - - Google Patents
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- Publication number
- JP2007201502A5 JP2007201502A5 JP2007111191A JP2007111191A JP2007201502A5 JP 2007201502 A5 JP2007201502 A5 JP 2007201502A5 JP 2007111191 A JP2007111191 A JP 2007111191A JP 2007111191 A JP2007111191 A JP 2007111191A JP 2007201502 A5 JP2007201502 A5 JP 2007201502A5
- Authority
- JP
- Japan
- Prior art keywords
- bond wafer
- glass substrate
- single crystal
- crystal silicon
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000010408 film Substances 0.000 claims 19
- 239000011521 glass Substances 0.000 claims 12
- 239000000758 substrate Substances 0.000 claims 12
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 9
- 239000010409 thin film Substances 0.000 claims 9
- 239000001257 hydrogen Substances 0.000 claims 8
- 229910052739 hydrogen Inorganic materials 0.000 claims 8
- 238000004519 manufacturing process Methods 0.000 claims 8
- 239000004065 semiconductor Substances 0.000 claims 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 7
- 238000010438 heat treatment Methods 0.000 claims 7
- 238000002513 implantation Methods 0.000 claims 7
- 238000000034 method Methods 0.000 claims 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 2
- 229910052814 silicon oxide Inorganic materials 0.000 claims 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 1
- 229910052581 Si3N4 Inorganic materials 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 239000000460 chlorine Substances 0.000 claims 1
- 229910052801 chlorine Inorganic materials 0.000 claims 1
- -1 hydrogen ions Chemical class 0.000 claims 1
- 150000002500 ions Chemical class 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007111191A JP2007201502A (ja) | 2007-04-20 | 2007-04-20 | 半導体装置およびその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007111191A JP2007201502A (ja) | 2007-04-20 | 2007-04-20 | 半導体装置およびその作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33767097A Division JPH11163363A (ja) | 1997-11-22 | 1997-11-22 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007201502A JP2007201502A (ja) | 2007-08-09 |
| JP2007201502A5 true JP2007201502A5 (enExample) | 2007-09-20 |
Family
ID=38455685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007111191A Withdrawn JP2007201502A (ja) | 2007-04-20 | 2007-04-20 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007201502A (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20100065145A (ko) * | 2007-09-14 | 2010-06-15 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 전자 기기 |
| JP5478166B2 (ja) * | 2008-09-11 | 2014-04-23 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR101570968B1 (ko) * | 2012-11-20 | 2015-11-23 | 코닝정밀소재 주식회사 | 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자 |
| JP7082097B2 (ja) * | 2019-08-22 | 2022-06-07 | 信越化学工業株式会社 | ガラス・オン・シリコン基板およびその製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01272107A (ja) * | 1988-04-25 | 1989-10-31 | Seiko Epson Corp | 薄膜形成方法 |
| JPH02256227A (ja) * | 1988-11-30 | 1990-10-17 | Ricoh Co Ltd | 薄膜半導体とその製法 |
| JPH03179778A (ja) * | 1989-05-08 | 1991-08-05 | Ricoh Co Ltd | 薄膜半導体形成用絶縁基板 |
| FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
| JPH05281573A (ja) * | 1992-04-01 | 1993-10-29 | Sharp Corp | 液晶表示用基板 |
| CN1132223C (zh) * | 1995-10-06 | 2003-12-24 | 佳能株式会社 | 半导体衬底及其制造方法 |
-
2007
- 2007-04-20 JP JP2007111191A patent/JP2007201502A/ja not_active Withdrawn
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