JP2007201502A - 半導体装置およびその作製方法 - Google Patents
半導体装置およびその作製方法 Download PDFInfo
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- JP2007201502A JP2007201502A JP2007111191A JP2007111191A JP2007201502A JP 2007201502 A JP2007201502 A JP 2007201502A JP 2007111191 A JP2007111191 A JP 2007111191A JP 2007111191 A JP2007111191 A JP 2007111191A JP 2007201502 A JP2007201502 A JP 2007201502A
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- film
- substrate
- thin film
- crystallized glass
- glass substrate
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- 238000000034 method Methods 0.000 title claims abstract description 70
- 239000004065 semiconductor Substances 0.000 title claims abstract description 43
- 239000010408 film Substances 0.000 claims abstract description 184
- 239000011521 glass Substances 0.000 claims abstract description 107
- 239000010409 thin film Substances 0.000 claims abstract description 52
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 46
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 46
- 239000010703 silicon Substances 0.000 claims abstract description 46
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 104
- 238000010438 heat treatment Methods 0.000 claims description 19
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 238000002230 thermal chemical vapour deposition Methods 0.000 claims description 8
- 230000001590 oxidative effect Effects 0.000 claims description 6
- 239000000126 substance Substances 0.000 abstract description 6
- 238000011109 contamination Methods 0.000 abstract description 3
- 239000011159 matrix material Substances 0.000 description 31
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 27
- 239000010410 layer Substances 0.000 description 26
- 239000007789 gas Substances 0.000 description 17
- 239000012535 impurity Substances 0.000 description 17
- 230000008569 process Effects 0.000 description 17
- 239000001257 hydrogen Substances 0.000 description 16
- 229910052739 hydrogen Inorganic materials 0.000 description 16
- 239000004973 liquid crystal related substance Substances 0.000 description 16
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- 229910052814 silicon oxide Inorganic materials 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- 239000010453 quartz Substances 0.000 description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 9
- 238000007254 oxidation reaction Methods 0.000 description 9
- 229910004298 SiO 2 Inorganic materials 0.000 description 8
- 239000011229 interlayer Substances 0.000 description 8
- 230000003647 oxidation Effects 0.000 description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 description 7
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000006870 function Effects 0.000 description 7
- 238000005468 ion implantation Methods 0.000 description 7
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000005530 etching Methods 0.000 description 6
- 229910052698 phosphorus Inorganic materials 0.000 description 6
- 239000011574 phosphorus Substances 0.000 description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229920001721 polyimide Polymers 0.000 description 5
- 229910010413 TiO 2 Inorganic materials 0.000 description 4
- 229910052796 boron Inorganic materials 0.000 description 4
- 229910052878 cordierite Inorganic materials 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 229930195733 hydrocarbon Natural products 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
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- 239000012071 phase Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 239000010432 diamond Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 3
- -1 hydrogen ions Chemical class 0.000 description 3
- GPRLSGONYQIRFK-UHFFFAOYSA-N hydron Chemical compound [H+] GPRLSGONYQIRFK-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- GQPLMRYTRLFLPF-UHFFFAOYSA-N Nitrous Oxide Chemical compound [O-][N+]#N GQPLMRYTRLFLPF-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000001747 exhibiting effect Effects 0.000 description 2
- 239000002667 nucleating agent Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 238000010583 slow cooling Methods 0.000 description 2
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 238000004435 EPR spectroscopy Methods 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020286 SiOxNy Inorganic materials 0.000 description 1
- 229910020776 SixNy Inorganic materials 0.000 description 1
- 229910020781 SixOy Inorganic materials 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 229910007472 ZnO—B2O3—SiO2 Inorganic materials 0.000 description 1
- GEIAQOFPUVMAGM-UHFFFAOYSA-N ZrO Inorganic materials [Zr]=O GEIAQOFPUVMAGM-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- HSFWRNGVRCDJHI-UHFFFAOYSA-N alpha-acetylene Natural products C#C HSFWRNGVRCDJHI-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000005354 aluminosilicate glass Substances 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000010407 anodic oxide Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001638 boron Chemical class 0.000 description 1
- 229910052795 boron group element Inorganic materials 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- BUMGIEFFCMBQDG-UHFFFAOYSA-N dichlorosilicon Chemical compound Cl[Si]Cl BUMGIEFFCMBQDG-UHFFFAOYSA-N 0.000 description 1
- 238000007865 diluting Methods 0.000 description 1
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002241 glass-ceramic Substances 0.000 description 1
- 150000008282 halocarbons Chemical class 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- IXCSERBJSXMMFS-UHFFFAOYSA-N hcl hcl Chemical compound Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 1
- 238000005338 heat storage Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000001659 ion-beam spectroscopy Methods 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 description 1
- 239000001272 nitrous oxide Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 150000003017 phosphorus Chemical class 0.000 description 1
- 238000007517 polishing process Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000001294 propane Substances 0.000 description 1
- 230000001698 pyrogenic effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229930195734 saturated hydrocarbon Natural products 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 229930195735 unsaturated hydrocarbon Natural products 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910000500 β-quartz Inorganic materials 0.000 description 1
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Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007111191A JP2007201502A (ja) | 2007-04-20 | 2007-04-20 | 半導体装置およびその作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007111191A JP2007201502A (ja) | 2007-04-20 | 2007-04-20 | 半導体装置およびその作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP33767097A Division JPH11163363A (ja) | 1997-11-22 | 1997-11-22 | 半導体装置およびその作製方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007201502A true JP2007201502A (ja) | 2007-08-09 |
| JP2007201502A5 JP2007201502A5 (enExample) | 2007-09-20 |
Family
ID=38455685
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007111191A Withdrawn JP2007201502A (ja) | 2007-04-20 | 2007-04-20 | 半導体装置およびその作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007201502A (enExample) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010093241A (ja) * | 2008-09-11 | 2010-04-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| TWI469330B (zh) * | 2007-09-14 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及電子設備 |
| KR101570968B1 (ko) * | 2012-11-20 | 2015-11-23 | 코닝정밀소재 주식회사 | 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자 |
| JP2021034510A (ja) * | 2019-08-22 | 2021-03-01 | 信越化学工業株式会社 | ガラス・オン・シリコン基板およびその製造方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01272107A (ja) * | 1988-04-25 | 1989-10-31 | Seiko Epson Corp | 薄膜形成方法 |
| JPH02256227A (ja) * | 1988-11-30 | 1990-10-17 | Ricoh Co Ltd | 薄膜半導体とその製法 |
| JPH03179778A (ja) * | 1989-05-08 | 1991-08-05 | Ricoh Co Ltd | 薄膜半導体形成用絶縁基板 |
| JPH05211128A (ja) * | 1991-09-18 | 1993-08-20 | Commiss Energ Atom | 薄い半導体材料フィルムの製造方法 |
| JPH05281573A (ja) * | 1992-04-01 | 1993-10-29 | Sharp Corp | 液晶表示用基板 |
| JPH09162090A (ja) * | 1995-10-06 | 1997-06-20 | Canon Inc | 半導体基体とその製造方法 |
-
2007
- 2007-04-20 JP JP2007111191A patent/JP2007201502A/ja not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01272107A (ja) * | 1988-04-25 | 1989-10-31 | Seiko Epson Corp | 薄膜形成方法 |
| JPH02256227A (ja) * | 1988-11-30 | 1990-10-17 | Ricoh Co Ltd | 薄膜半導体とその製法 |
| JPH03179778A (ja) * | 1989-05-08 | 1991-08-05 | Ricoh Co Ltd | 薄膜半導体形成用絶縁基板 |
| JPH05211128A (ja) * | 1991-09-18 | 1993-08-20 | Commiss Energ Atom | 薄い半導体材料フィルムの製造方法 |
| JPH05281573A (ja) * | 1992-04-01 | 1993-10-29 | Sharp Corp | 液晶表示用基板 |
| JPH09162090A (ja) * | 1995-10-06 | 1997-06-20 | Canon Inc | 半導体基体とその製造方法 |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI469330B (zh) * | 2007-09-14 | 2015-01-11 | Semiconductor Energy Lab | 半導體裝置及電子設備 |
| JP2010093241A (ja) * | 2008-09-11 | 2010-04-22 | Semiconductor Energy Lab Co Ltd | 半導体装置の作製方法 |
| KR101570968B1 (ko) * | 2012-11-20 | 2015-11-23 | 코닝정밀소재 주식회사 | 유기 발광소자용 기판, 그 제조방법 및 이를 구비하는 유기 발광소자 |
| JP2021034510A (ja) * | 2019-08-22 | 2021-03-01 | 信越化学工業株式会社 | ガラス・オン・シリコン基板およびその製造方法 |
| JP7082097B2 (ja) | 2019-08-22 | 2022-06-07 | 信越化学工業株式会社 | ガラス・オン・シリコン基板およびその製造方法 |
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