JP2007158371A5 - - Google Patents
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- Publication number
- JP2007158371A5 JP2007158371A5 JP2007024310A JP2007024310A JP2007158371A5 JP 2007158371 A5 JP2007158371 A5 JP 2007158371A5 JP 2007024310 A JP2007024310 A JP 2007024310A JP 2007024310 A JP2007024310 A JP 2007024310A JP 2007158371 A5 JP2007158371 A5 JP 2007158371A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- silicon
- single crystal
- semiconductor device
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- 239000010408 film Substances 0.000 claims 29
- 239000000758 substrate Substances 0.000 claims 22
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 15
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims 15
- 229910052710 silicon Inorganic materials 0.000 claims 15
- 239000010703 silicon Substances 0.000 claims 15
- 229910052814 silicon oxide Inorganic materials 0.000 claims 14
- 238000004519 manufacturing process Methods 0.000 claims 13
- 238000000034 method Methods 0.000 claims 13
- 239000004065 semiconductor Substances 0.000 claims 13
- 239000010410 layer Substances 0.000 claims 12
- 239000010409 thin film Substances 0.000 claims 7
- 239000002184 metal Substances 0.000 claims 5
- 229910052751 metal Inorganic materials 0.000 claims 5
- 238000010438 heat treatment Methods 0.000 claims 4
- 230000003647 oxidation Effects 0.000 claims 4
- 238000007254 oxidation reaction Methods 0.000 claims 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims 3
- 229910052739 hydrogen Inorganic materials 0.000 claims 3
- 239000001257 hydrogen Substances 0.000 claims 3
- 229910021332 silicide Inorganic materials 0.000 claims 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 2
- 239000011229 interlayer Substances 0.000 claims 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 2
- 239000000919 ceramic Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 239000011521 glass Substances 0.000 claims 1
- 229910052736 halogen Inorganic materials 0.000 claims 1
- 150000002367 halogens Chemical class 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000005498 polishing Methods 0.000 claims 1
- 239000010453 quartz Substances 0.000 claims 1
- 239000000126 substance Substances 0.000 claims 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007024310A JP2007158371A (ja) | 2007-02-02 | 2007-02-02 | 半導体装置の作製方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2007024310A JP2007158371A (ja) | 2007-02-02 | 2007-02-02 | 半導体装置の作製方法 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10174482A Division JP2000012864A (ja) | 1998-06-22 | 1998-06-22 | 半導体装置の作製方法 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2009169722A Division JP2009246385A (ja) | 2009-07-21 | 2009-07-21 | 半導体装置及びマイクロプロセッサ |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2007158371A JP2007158371A (ja) | 2007-06-21 |
| JP2007158371A5 true JP2007158371A5 (enExample) | 2007-08-02 |
Family
ID=38242210
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2007024310A Withdrawn JP2007158371A (ja) | 2007-02-02 | 2007-02-02 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2007158371A (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5511173B2 (ja) * | 2007-10-10 | 2014-06-04 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2009151293A (ja) * | 2007-11-30 | 2009-07-09 | Semiconductor Energy Lab Co Ltd | 表示装置及び表示装置の作製方法、並びに電子機器 |
| JP5201967B2 (ja) * | 2007-12-10 | 2013-06-05 | 株式会社半導体エネルギー研究所 | 半導体基板の作製方法および半導体装置の作製方法 |
| US20110147817A1 (en) * | 2009-12-17 | 2011-06-23 | Infineon Technologies Austria Ag | Semiconductor component having an oxide layer |
| US9947688B2 (en) * | 2011-06-22 | 2018-04-17 | Psemi Corporation | Integrated circuits with components on both sides of a selected substrate and methods of fabrication |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0242725A (ja) * | 1988-08-03 | 1990-02-13 | Hitachi Ltd | 半導体装置の製造方法 |
| JPH0379035A (ja) * | 1989-08-22 | 1991-04-04 | Nippondenso Co Ltd | Ｍｏｓトランジスタ及びその製造方法 |
| JPH04348532A (ja) * | 1991-05-27 | 1992-12-03 | Hitachi Ltd | 半導体装置およびその製造方法 |
| JP3294934B2 (ja) * | 1994-03-11 | 2002-06-24 | キヤノン株式会社 | 半導体基板の作製方法及び半導体基板 |
| JPH09213916A (ja) * | 1996-02-06 | 1997-08-15 | Nippon Telegr & Teleph Corp <Ntt> | Ｓｏｉ基板の製造方法 |
| JPH09289323A (ja) * | 1996-04-23 | 1997-11-04 | Matsushita Electric Works Ltd | 半導体装置の製造方法 |
| JPH09293876A (ja) * | 1996-04-26 | 1997-11-11 | Canon Inc | 半導体素子基板およびその製造法、該基板を用いた半導体装置 |
| JP3662371B2 (ja) * | 1996-10-15 | 2005-06-22 | 株式会社半導体エネルギー研究所 | 薄膜トランジスタの作製方法及び薄膜トランジスタ |
| JP3645377B2 (ja) * | 1996-10-24 | 2005-05-11 | 株式会社半導体エネルギー研究所 | 集積回路の作製方法 |
| JP3948035B2 (ja) * | 1996-10-18 | 2007-07-25 | ソニー株式会社 | 張り合わせｓｏｉ基板の作成方法 |
| JPH10135475A (ja) * | 1996-10-31 | 1998-05-22 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP3587636B2 (ja) * | 1996-11-04 | 2004-11-10 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
-
2007
- 2007-02-02 JP JP2007024310A patent/JP2007158371A/ja not_active Withdrawn
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